AI Chat Paper
Note: Please note that the following content is generated by AMiner AI. SciOpen does not take any responsibility related to this content.
{{lang === 'zh_CN' ? '文章概述' : 'Summary'}}
{{lang === 'en_US' ? '中' : 'Eng'}}
Chat more with AI
Powered by AMiner. Clicking this button will take you away from SciOpen.
Home Nano Research Article
Article Link
Cite
EndNote(RIS) BibTeX
Collect
Submit Manuscript
Show Outline
Outline
Show full outline
Hide outline
Outline
Show full outline
Hide outline
Research Article

High-performance polarization-sensitive photodetector based on a few-layered PdSe2 nanosheet

Jiahong Zhong1, Juan Yu1,2, Lingkai Cao1, Cheng Zeng1, Junnan Ding1, Chunxiao Cong3, Zongwen Liu4, Yanping Liu1,5,6( )
School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, Changsha 410083, China
School of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China
School of Information Science and Technology, Fudan University, Shanghai 200433, China
School of Chemical and Biomolecular Engineering, The University of Sydney, NSW 2006, Australia
Shenzhen Research Institute of Central South University, Shenzhen 518057, China
State Key Laboratory of High Performance Complex Manufacturing, Central South University, Changsha 410083, China
Show Author Information

Graphical Abstract

Abstract

The extraordinary optical and electronic properties of anisotropic two-dimensional materials, such as black phosphorus, ReS2, and GeSe, enable them a promising component of polarization-sensitive photodetectors. However, these applications are significantly limited by the challenges of air-stability, response time, and linearly dichroic ratio. Interestingly, palladium diselenide (PdSe2) with high air stability is an emerging material that has robust in-plane anisotropy induced by its asymmetric pentagonal lattice structure. We have successfully prepared a few-layer PdSe2 using micromechanical exfoliation, and here we demonstrate the strong linear dichroism behavior of PdSe2 by polarization-resolved absorption spectra measurements. Such unique linear dichroism, endows the PdSe2 photodetector powerful ability to detect polarized light. The photodetector based on 5L PdSe2, as tested with polarization-dependent photocurrent mapping, exhibited competitive capability to detect polarized light, achieving a significant photocurrent on/off ratio (> 102), the quite fast response time (< 11 ms) and robust linearly dichroic ratios (Imax/Imin ≈ 1.9 at 532 nm). These results are essential advance in the development of polarization-sensitive photodetector, a crucial step towards opening up a new avenue for the application of 2D optoelectronic devices.

Keywords

PdSe2anisotropypolarization-sensitivelinear dichroism

References

[1]
Bolotin, K. I.; Sikes, K. J.; Jiang, Z.; Klima, M.; Fudenberg, G.; Hone, J.; Kim, P.; Stormer, H. L. Ultrahigh electron mobility in suspended graphene. Solid State Commun. 2008, 146, 351-355.
Crossref Google Scholar
[2]
Du, X.; Skachko, I.; Barker, A.; Andrei, E. Y. Approaching ballistic transport in suspended graphene. Nat. Nanotechnol. 2008, 3, 491-495.
Crossref Google Scholar
[3]
Vakil, A.; Engheta, N. Transformation optics using graphene. Science 2011, 332, 1291-1294.
Crossref Google Scholar
[4]
Li, L. K.; Yu, Y. J.; Ye, G. J.; Ge, Q. Q.; Ou, X. D.; Wu, H.; Feng, D. L.; Chen, X. H.; Zhang, Y. B. Black phosphorus field-effect transistors. Nat. Nanotechnol. 2014, 9, 372-377.
Crossref Google Scholar
[5]
Hong, T.; Chamlagain, B.; Lin, W. Z.; Chuang, H. J.; Pan, M. H.; Zhou, Z. X.; Xu, Y. Q. Polarized photocurrent response in black phosphorus field-effect transistors. Nanoscale 2014, 6, 8978-8983.
Crossref Google Scholar
[6]
Yuan, H. T.; Liu, X. G.; Afshinmanesh, F.; Li, W.; Xu, G.; Sun, J.; Lian, B.; Curto, A. G.; Ye, G. J.; Hikita, Y. et al. Polarization-sensitive broadband photodetector using a black phosphorus vertical p-n junction. Nat. Nanotechnol. 2015, 10, 707-713.
Crossref Google Scholar
[7]
Zhang, E. Z.; Wang, P.; Li, Z.; Wang, H. F.; Song, C. Y.; Huang, C.; Chen, Z. G.; Yang, L.; Zhang, K.; Lu, S. et al. Tunable ambipolar polarization-sensitive photodetectors based on high-anisotropy ReSe2 nanosheets. ACS Nano 2016, 10, 8067-8077.
Crossref Google Scholar
[8]
Zhang, E. Z.; Jin, Y. B.; Yuan, X.; Wang, W. Y.; Zhang, C.; Tang, L.; Liu, S. S.; Zhou, P.; Hu, W. D.; Xiu, F. X. ReS2-based field-effect transistors and photodetectors. Adv. Funct. Mater. 2015, 25, 4076-4082.
Crossref Google Scholar
[9]
Wang, X. T.; Li, Y. T.; Huang, L.; Jiang, X. W.; Jiang, L.; Dong, H. L.; Wei, Z. M.; Li, J. B.; Hu, W. P. Short-wave near-infrared linear dichroism of two-dimensional germanium selenide. J. Am. Chem. Soc. 2017, 139, 14976-14982.
Crossref Google Scholar
[10]
Oyedele, A. D.; Yang, S. Z.; Liang, L. B.; Puretzky, A. A.; Wang, K.; Zhang, J. J.; Yu, P.; Pudasaini, P. R.; Ghosh, A. W.; Liu, Z. et al. PdSe2: Pentagonal two-dimensional layers with high air stability for electronics. J. Am. Chem. Soc. 2017, 139, 14090-14097.
Crossref Google Scholar
[11]
Long, M. S.; Wang, Y.; Wang, P.; Zhou, X. H.; Xia, H.; Luo, C.; Huang, S. Y.; Zhang, G. W.; Yan, H. G.; Fan, Z. Y. et al. Palladium diselenide long-wavelength infrared photodetector with high sensitivity and stability. ACS Nano 2019, 13, 2511-2519.
Crossref Google Scholar
[12]
Wu, D.; Guo, J. W.; Du, J.; Xia, C. X.; Zeng, L. H.; Tian, Y. Z.; Shi, Z. F.; Tian, Y. T.; Li, X. J.; Tsang, Y. H. et al. Highly polarization-sensitive, broadband, self-powered photodetector based on graphene/PdSe2/ germanium heterojunction. ACS Nano 2019, 13, 9907-9917.
Crossref Google Scholar
[13]
Zeng, L. H.; Chen, Q. M.; Zhang, Z. X.; Wu, D.; Yuan, H. Y.; Li, Y. Y.; Qarony, W.; Lau, S. P.; Luo, L. B.; Tsang, Y. H. Multilayered PdSe2/ perovskite schottky junction for fast, self-powered, polarization-sensitive, broadband photodetectors, and image sensor application. Adv. Sci. 2019, 6, 1901134.
Crossref Google Scholar
[14]
Sun, J. F.; Shi, H. L.; Siegrist, T.; Singh, D. J. Electronic, transport, and optical properties of bulk and mono-layer PdSe2. Appl. Phys. Lett. 2015, 107, 153902.
Crossref Google Scholar
[15]
Xu, M. S.; Liang, T.; Shi, M. M.; Chen, H. Z. Graphene-like two-dimensional materials. Chem. Rev. 2013, 113, 3766-3798.
Crossref Google Scholar
[16]
Fiori, G.; Bonaccorso, F.; Iannaccone, G.; Palacios, T.; Neumaier, D.; Seabaugh, A.; Banerjee, S. K.; Colombo, L. Electronics based on two-dimensional materials. Nat. Nanotechnol. 2014, 9, 768-779.
Crossref Google Scholar
[17]
Qiao, J. S.; Kong, X. H.; Hu, Z. X.; Yang, F.; Ji, W. High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus. Nat. Commun. 2014, 5, 4475.
Crossref Google Scholar
[18]
O’Brien, M.; McEvoy, N.; Hanlon, D.; Hallam, T.; Coleman, J. N.; Duesberg, G. S. Mapping of low-frequency Raman modes in CVD-grown transition metal dichalcogenides: Layer number, stacking orientation and resonant effects. Sci. Rep. 2016, 6, 19476.
Crossref Google Scholar
[19]
Puretzky, A. A.; Liang, L. B.; Li, X. F.; Xiao, K.; Wang, K.; Mahjouri-Samani, M.; Basile, L.; Idrobo, J. C.; Sumpter, B. G.; Meunier, V. et al. Low-frequency Raman fingerprints of two-dimensional metal dichalcogenide layer stacking configurations. ACS Nano 2015, 9, 6333-6342.
Crossref Google Scholar
[20]
Zhao, Y. Y.; Luo, X.; Li, H.; Zhang, J.; Araujo, P. T.; Gan, C. K.; Wu, J.; Zhang, H.; Quek, S. Y.; Dresselhaus, M. S. et al. Interlayer breathing and shear modes in few-trilayer MoS2 and WSe2. Nano Lett. 2013, 13, 1007-1015.
Crossref Google Scholar
[21]
Yu, J.; Kuang, X. F.; Gao, Y. J.; Wang, Y. P.; Chen, K. Q.; Ding, Z. K.; Liu, J.; Cong, C. X.; He, J.; Liu, Z. W. et al. Direct observation of the linear dichroism transition in two-dimensional palladium diselenide. Nano Lett. 2020, 20, 1172-1182.
Crossref Google Scholar
[22]
Wu, J. X.; Mao, N. N.; Xie, L. M.; Xu, H.; Zhang, J. Identifying the crystalline orientation of black phosphorus using angle-resolved polarized Raman spectroscopy. Angew. Chem., Int. Ed .2015, 54, 2366-2369.
Crossref Google Scholar
[23]
Fang, H. H.; Hu, W. D. Photogating in low dimensional photodetectors. Adv. Sci. 2017, 4, 1700323.
Crossref Google Scholar
[24]
Furchi, M. M.; Polyushkin, D. K.; Pospischil, A.; Mueller, T. Mechanisms of photoconductivity in atomically thin MoS2. Nano Lett. 2014, 14, 6165-6170.
Crossref Google Scholar
[25]
Jo, S. H.; Kang, D. H.; Shim, J.; Jeon, J.; Jeon, M. H.; Yoo, G.; Kim, J.; Lee, J.; Yeom, G. Y.; Lee, S. et al. A high-performance WSe2/h-BN photodetector using a triphenylphosphine (pph3)-based n-doping technique. Adv. Mater. 2016, 28, 4824-4831.
Crossref Google Scholar
[26]
Wu, J. Y.; Chun, Y. T.; Li, S. P.; Zhang, T.; Wang, J. Z.; Shrestha, P. K.; Chu, D. P. Broadband MoS2 field-effect phototransistors: Ultrasensitive visible-light photoresponse and negative infrared photoresponse. Adv. Mater. 2018, 30, 1705880.
Crossref Google Scholar
[27]
Tian, Z.; Guo, C. L.; Zhao, M. X.; Li, R. R.; Xue, J. M. Two-dimensional SnS: A phosphorene analogue with strong in-plane electronic anisotropy. ACS Nano 2017, 11, 2219-2226.
Crossref Google Scholar
[28]
Zhang, Z. D.; Yang, J. H.; Zhang, K.; Chen, S.; Mei, F. H.; Shen, G. Z. Anisotropic photoresponse of layered 2D SnS-based near infrared photodetectors. J. Mater. Chem. C 2017, 5, 11288-11293.
Crossref Google Scholar
[29]
Freitag, M.; Low, T.; Xia, F. N.; Avouris, P. Photoconductivity of biased graphene. Nat. Photon. 2013, 7, 53-59.
Crossref Google Scholar
[30]
Li, J. T.; Naiini, M. M.; Vaziri, S.; Lemme, M. C.; Östling, M. Inkjet printing of MoS2. Adv. Funct. Mater. 2014, 24, 6524-6531.
Crossref Google Scholar
[31]
Perea-López, N.; Elías, A. L.; Berkdemir, A.; Castro-Beltran, A.; Gutiérrez, H. R.; Feng, S. M.; Lv, R. T.; Hayashi, T.; López-Urías, F.; Ghosh, S. et al. Photosensor device based on few-layered WS2 films. Adv. Funct. Mater. 2013, 23, 5511-5517.
Crossref Google Scholar
[32]
Wu, J. B.; Cong, X.; Niu, S. Y.; Liu, F. X.; Zhao, H.; Du, Z. H.; Ravichandran, J.; Tan, P. H.; Wang, H. Linear dichroism conversion in quasi-1D perovskite chalcogenide. Adv. Mater. 2019, 31, 1902118.
Crossref Google Scholar
[33]
Yang, H.; Pan, L. F.; Wang, X. T.; Deng, H. X.; Zhong, M. Z.; Zhou, Z. Q.; Lou, Z.; Shen, G. Z.; Wei, Z. M. Mixed-valence-driven quasi-1D SnIISnIVS3 with highly polarization-sensitive UV-vis-NIR photoresponse. Adv. Funct. Mater. 2019, 29, 1904416.
Crossref Google Scholar
[34]
Zhou, Z. Q.; Long, M. S.; Pan, L. F.; Wang, X. T.; Zhong, M. Z.; Blei, M.; Wang, J. L.; Fang, J. Z.; Tongay, S.; Hu, W. D. et al. Perpendicular optical reversal of the linear dichroism and polarized photodetection in 2D GeAs. ACS Nano 2018, 12, 12416-12423.
Crossref Google Scholar
[35]
Wang, F.; Wang, Z. X.; Yin, L.; Cheng, R. Q.; Wang, J. J.; Wen, Y.; Shifa, T. A.; Wang, F. M.; Zhang, Y.; Zhan, X. Y. et al. 2D library beyond graphene and transition metal dichalcogenides: A focus on photodetection. Chem. Soc. Rev. 2018, 47, 6296-6341.
Crossref Google Scholar
[36]
Xie, C.; Mak, C.; Tao, X. M.; Yan, F. Photodetectors based on two-dimensional layered materials beyond graphene. Adv. Funct. Mater. 2017, 27, 1603886.
Crossref Google Scholar
Nano Research
Volume 13 Issue 6,
June 2020
Pages 1780-1786
DOI: 10.1007/s12274-020-2804-y
Cite this article:
Zhong J, Yu J, Cao L, et al. High-performance polarization-sensitive photodetector based on a few-layered PdSe2 nanosheet. Nano Research, 2020, 13(6): 1780-1786. https://doi.org/10.1007/s12274-020-2804-y
Topics:
Electronic propertiesGermanium compoundsPhotodetectorsPhotonsSelenium compounds

735

Views

69

Crossref

N/A

Web of Science

70

Scopus

10

CSCD

Altmetrics
Received: 22 January 2020
Revised: 09 April 2020
Accepted: 13 April 2020
Published: 30 April 2020
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020
Return