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Research Article

Direct bandgap engineering with local biaxial strain in few-layer MoS2 bubbles

Yang Guo1,2,§, Bin Li3,§, Yuan Huang1,§, Shuo Du1,2, Chi Sun1,2, Hailan Luo1, Baoli Liu1,2,4, Xingjiang Zhou1, Jinlong Yang3, Junjie Li1,2,4, Changzhi Gu1,2( )
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, China
Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics (CAS), University of Science and Technology of China, Hefei 230026, China
Songshan Lake Materials Laboratory, Dongguan 523808, China

§ Yang Guo, Bin Li, and Yuan Huang contributed equally to this work.

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Abstract

Strain engineering provides an important strategy to modulate the optical and electrical properties of semiconductors for improving devices performance with mechanical force or thermal expansion difference. Here, we present the investigation of the local strain distribution over few-layer MoS2 bubbles, by using scanning photoluminescence and Raman spectroscopies. We observe the obvious direct bandgap emissions with strain in the few-layer MoS2 bubble and the strain-induced continuous energy shifts of both resonant excitons and vibrational modes from the edge of the MoS2 bubble to the center (10 μm scale), associated with the oscillations resulted from the optical interference-induced temperature distribution. To understand these results, we perform ab initio simulations to calculate the electronic and vibrational properties of few-layer MoS2 with biaxial tensile strain, based on density functional theory, finding good agreement with the experimental results. Our study suggests that local strain offers a convenient way to continuously tune the physical properties of a few-layer transition metal dichalcogenides (TMDs) semiconductor, and opens up new possibilities for band engineering within the 2D plane.

Keywords

two-dimensional (2D) layered materialstransition metal dichalcogenidesband engineeringlocal strain

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Nano Research
Volume 13 Issue 8,
August 2020
Pages 2072-2078
DOI: 10.1007/s12274-020-2809-6
Cite this article:
Guo Y, Li B, Huang Y, et al. Direct bandgap engineering with local biaxial strain in few-layer MoS2 bubbles. Nano Research, 2020, 13(8): 2072-2078. https://doi.org/10.1007/s12274-020-2809-6
Topics:
Density functional theoryElectronic propertiesEnergy gapLayered semiconductorsMolybdenum compoundsTransition metals

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Received: 23 December 2019
Revised: 10 April 2020
Accepted: 13 April 2020
Published: 05 August 2020
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020
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