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Research Article

Van der Waals epitaxy of ultrathin crystalline PbTe nanosheets with high near-infrared photoelectric response

Xinxin Zhao1,3,§, Qing Yin2,3,§, Hao Huang4, Qiang Yu3, Bo Liu5, Jie Yang1,3, Zhuo Dong1,3, Zhenjiang Shen6, Benpeng Zhu7, Lei Liao4, Kai Zhang3( )
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China
Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
School of Physics and Technology, Wuhan University, Wuhan 430072, China
The Institute of Scientific and Industrial Research, Osaka University, Osaka 567-0047, Japan
College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China
School of Optical and Electronic Information, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China

§ Xinxin Zhao and Qing Yin contributed equally to this work.

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Graphical Abstract

Abstract

Lead telluride (PbTe) is one of the reliable candidates for infrared (IR) optoelectronics with optimum band-gap as well as excellent photoelectric properties. Great interests had been paid on the growth and device applications with PbTe for the development of high-performance IR photodetectors especially those working in the near-infrared regime. Although a great deal of effort had been made to prepare PbTe nanostructures for miniaturized detectors, it is difficult to synthesize high-quality two-dimensional (2D) PbTe crystals due to its rock-salt non-layered structure. Herein, a facile strategy for controllable synthesis of ultrathin crystalline PbTe nanosheets by van der Waals epitaxy is reported. With an optimized growth temperature, which determines the morphology transit from triangular pyramid islands to regular square 2D planars, PbTe nanosheets in lateral size of tens of microns with thickness down to ~ 7 nm are achieved. Meanwhile, ultrasensitive near-infrared detectors (NIRDs) based on the as-grown 2D PbTe nanosheets have been demonstrated with an ultrahigh responsivity exceeding 3,847 A/W at the wavelength of 1,550 nm under room temperature. Our approach demonstrates that 2D PbTe nanosheets have great latent capacity of developing high-performance miniaturized IR optoelectronic devices.

Keywords

two-dimensional materialsvan der Waals epitaxylead telluridenear-infraredphotodetector

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Nano Research
Volume 14 Issue 6,
June 2021
Pages 1955-1960
DOI: 10.1007/s12274-020-2834-5
Cite this article:
Zhao X, Yin Q, Huang H, et al. Van der Waals epitaxy of ultrathin crystalline PbTe nanosheets with high near-infrared photoelectric response. Nano Research, 2021, 14(6): 1955-1960. https://doi.org/10.1007/s12274-020-2834-5
Topics:
Crystal structureEnergy gapInfrared devices IVNanosheetsOptoelectronic devicesPhotoelectricityVan der Waals forcesVI semiconductors
Part of a topical collection:
NR45 Awards in 2D Materials, 2021

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Received: 16 March 2020
Revised: 13 April 2020
Accepted: 25 April 2020
Published: 22 May 2020
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature
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