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Research Article

Controllable growth and flexible optoelectronic devices of regularly-assembled Bi2S3 semiconductor nanowire bifurcated junctions and crosslinked networks

Yi Hu1, Lingyun Mao1, Xin Yuan1, Jingyu Lu1, Renpeng Chen1, Tao Chen1, Wenjun Zhang1, Xiaolan Xue1, Wen Yan1, Mohammadreza Shokouhimehr2, Xiao Li Zhang3, Zhong Jin1,4( )
Key Laboratory of Mesoscopic Chemistry of MOE, Jiangsu Key Laboratory of Advanced Organic Materials, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China
Shenzhen Research Institute of Nanjing University, Shenzhen 518063, China
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Graphical Abstract

Abstract

Regularly assembled structures of nanowires, such as aligned arrays, junctions and interconnected networks, have great potential for the applications in logical circuits, address decoders, photoelectronic devices and transparent electrodes. However, for now it is still lack of effective approaches for constructing nanowire bifurcated junctions and crosslinked networks with ordered orientations and high quality. Herein, we report the controlled growth of Bi2S3 semiconductor nanowire bifurcated junctions and crosslinked networks with well-aligned directions and high crystalline degree by utilizing the proportional lattice match between nanowires and substrates. Taking advantages of the "tip-to-stem splice" assembly of individual nanowires, the precise orientation alignments of Bi2S3 semiconductor nanowire bifurcated junctions and crosslinked networks were successfully realized. The controlled growth mechanism and structural evolution process have been elucidated by detailed atomic structure characterizations and modeling. The highly crystal quality and direct energy bandgap of as-assembled photodetectors based on individual bismuth sulfide nanowires enabled high photoresponsivity and fast switch time under light illumination. The three-terminal devices based on nanowire bifurcated junctions present rapid carrier transport across the junction. The flexible photodetectors based on nanowire crosslinked networks show very minimal decay of photocurrent after long-term bending test. This work may provide new insights for the guided construction and regular assembly of low-dimensional ordered functional nanostructures towards advanced nanotechnologies.

Keywords

Bi2S3 nanowiresbifurcated junctionscrosslinked networksflexible optoelectronic devices

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Nano Research
Volume 13 Issue 8,
August 2020
Pages 2226-2232
DOI: 10.1007/s12274-020-2841-6
Cite this article:
Hu Y, Mao L, Yuan X, et al. Controllable growth and flexible optoelectronic devices of regularly-assembled Bi2S3 semiconductor nanowire bifurcated junctions and crosslinked networks. Nano Research, 2020, 13(8): 2226-2232. https://doi.org/10.1007/s12274-020-2841-6
Topics:
Bismuth compoundsCrystal atomic structureLayered semiconductorsNanowiresPhotodetectorsPhotonsSemiconducting bismuth compounds SubstratesSulfur compounds

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Received: 20 December 2019
Revised: 22 April 2020
Accepted: 30 April 2020
Published: 05 August 2020
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020
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