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Research Article

Efficient photovoltaic effect in graphene/h-BN/silicon heterostructure self-powered photodetector

Ui Yeon Won1, Boo Heung Lee1, Young Rae Kim1,2, Won Tae Kang1,2, Ilmin Lee1, Ji Eun Kim1, Young Hee Lee2, Woo Jong Yu1( )
Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
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Graphical Abstract

Abstract

Graphene (Gr)/Si-based optoelectronic devices have attracted a lot of academic attention due to the simpler fabrication processes, low costs, and higher performance of their two-dimensional (2D)/three-dimensional (3D) hybrid interfaces in Schottky junction that promotes electron-hole separation. However, due to the built-in potential of Gr/Si as a photodetector, the Iph/Idark ratio is often hindered near zero-bias at relatively low illumination intensity. This is a major drawback in self-powered photodetectors. In this study, we have demonstrated a self-powered van der Waals heterostructure photodetector in the visible range using a Gr/hexagonal boron nitride (h-BN)/Si structure and clarified that the thin h-BN insertion can engineer asymmetric carrier transport and avoid interlayer coupling at the interface. The dark current was able to be suppressed by inserting an h-BN insulator layer, while maintaining the photocurrent with minimal decrease at near zero-bias. As a result, the normalized photocurrent-to-dark ratio (NPDR) is improved more than 104 times. Also, both Iph/Idark ratio and detectivity, increase by more than 104 times at -0.03 V drain voltage. The proposed Gr/h-BN/Si heterostructure is able to contribute to the introduction of next-generation photodetectors and photovoltaic devices based on graphene or silicon.

Keywords

graphenehexagonal boron nitrideself-poweredvan der Waals heterostructure

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Nano Research
Volume 14 Issue 6,
June 2021
Pages 1967-1972
DOI: 10.1007/s12274-020-2866-x
Cite this article:
Won UY, Lee BH, Kim YR, et al. Efficient photovoltaic effect in graphene/h-BN/silicon heterostructure self-powered photodetector. Nano Research, 2021, 14(6): 1967-1972. https://doi.org/10.1007/s12274-020-2866-x
Topics:
Boron nitrideGraphene devices IIIPhotodetectorsPhotonsSiliconV semiconductorsVan der Waals forces
Part of a topical collection:
NR45 Awards in 2D Materials, 2021

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Received: 11 February 2020
Revised: 20 April 2020
Accepted: 09 May 2020
Published: 09 June 2020
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature
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