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Research Article | Open Access

High resolution strain mapping of a single axially heterostructured nanowire using scanning X-ray diffraction

Susanna Hammarberg1( ), Vilgailė Dagytė2, Lert Chayanun1, Megan O. Hill3, Alexander Wyke1, Alexander Björling4, Ulf Johansson4, Sebastian Kalbfleisch4, Magnus Heurlin2, Lincoln J. Lauhon3, Magnus T. Borgström2, Jesper Wallentin1
Synchrotron Radiation Research and NanoLund, Lund University, Box 118, Lund 221 00, Sweden
Solid State Physics and NanoLund, Lund University, Box 118, Lund 221 00, Sweden
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
MAX IV Laboratory, Lund University, Box 118, Lund 221 00, Sweden
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Graphical Abstract

Abstract

Axially heterostructured nanowires are a promising platform for next generation electronic and optoelectronic devices. Reports based on theoretical modeling have predicted more complex strain distributions and increased critical layer thicknesses than in thin films, due to lateral strain relaxation at the surface, but the understanding of the growth and strain distributions in these complex structures is hampered by the lack of high-resolution characterization techniques. Here, we demonstrate strain mapping of an axially segmented GaInP-InP 190 nm diameter nanowire heterostructure using scanning X-ray diffraction. We systematically investigate the strain distribution and lattice tilt in three different segment lengths from 45 to 170 nm, obtaining strain maps with about 10-4 relative strain sensitivity. The experiments were performed using the 90 nm diameter nanofocus at the NanoMAX beamline, taking advantage of the high coherent flux from the first diffraction limited storage ring MAX IV. The experimental results are in good agreement with a full simulation of the experiment based on a three-dimensional (3D) finite element model. The largest segments show a complex profile, where the lateral strain relaxation at the surface leads to a dome-shaped strain distribution from the mismatched interfaces, and a change from tensile to compressive strain within a single segment. The lattice tilt maps show a cross-shaped profile with excellent qualitative and quantitative agreement with the simulations. In contrast, the shortest measured InP segment is almost fully adapted to the surrounding GaInP segments.

Keywords

strain mappingnanowireheterostructureX-ray diffraction (XRD)MAX IVfinite element modeling

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References

[1]
Memisevic, E.; Hellenbrand, M.; Lind, E.; Persson, A. R.; Sant, S.; Schenk, A.; Svensson, J.; Wallenberg, R.; Wernersson, L. E. Individual defects in InAs/InGaAsSb/GaSb nanowire tunnel field-effect transistors operating below 60 mV/decade. Nano Lett. 2017, 17, 4373-4380.
Google Scholar
[2]
Tomioka, K.; Yoshimura, M.; Fukui, T. A III-V nanowire channel on silicon for high-performance vertical transistors. Nature 2012, 488, 189-192.
Google Scholar
[3]
Jia, C. C.; Lin, Z. Y.; Huang, Y.; Duan, X. F. Nanowire electronics: From nanoscale to macroscale. Chem. Rev. 2019, 119, 9074-9135.
Google Scholar
[4]
Haverkort, J. E. M.; Garnett, E. C.; Bakkers, E. P. A. M. Fundamentals of the nanowire solar cell: Optimization of the open circuit voltage. Appl. Phys. Rev. 2018, 5, 031106.
Google Scholar
[5]
Otnes, G.; Borgström, M. T. Towards high efficiency nanowire solar cells. Nano Today 2017, 12, 31-45.
Google Scholar
[6]
Wallentin, J.; Anttu, N.; Asoli, D.; Huffman, M.; Åberg, I.; Magnusson, M. H.; Siefer, G.; Fuss-Kailuweit, P.; Dimroth, F.; Witzigmann, B. et al. InP nanowire array solar cells achieving 13.8% efficiency by exceeding the ray optics limit. Science 2013, 339, 1057-1060.
Google Scholar
[7]
Soci, C.; Zhang, A.; Bao, X. Y.; Kim, H.; Lo, Y.; Wang, D. L. Nanowire photodetectors. J. Nanosci. Nanotechnol. 2010, 10, 1430-1449.
Google Scholar
[8]
Gudiksen, M. S.; Lauhon, L. J.; Wang, J. F.; Smith, D. C.; Lieber, C. M. Growth of nanowire superlattice structures for nanoscale photonics and electronics. Nature 2002, 415, 617-620.
Google Scholar
[9]
Gibson, S. J.; van Kasteren, B.; Tekcan, B.; Cui, Y. C.; van Dam, D.; Haverkort, J. E.; Bakkers, E. P. A. M.; Reimer, M. E. Tapered InP nanowire arrays for efficient broadband high-speed single-photon detection. Nat. Nanotechnol. 2019, 14, 473-479.
Google Scholar
[10]
Barrigón, E.; Heurlin, M.; Bi, Z. X.; Monemar, B.; Samuelson, L. Synthesis and applications of III-V nanowires. Chem. Rev. 2019, 119, 9170-9220.
Google Scholar
[11]
Motohisa, J.; Kameda, H.; Sasaki, M.; Tomioka, K. Characterization of nanowire light-emitting diodes grown by selective-area metal-organic vapor-phase epitaxy. Nanotechnology 2019, 30, 134002.
Google Scholar
[12]
Corfdir, P.; Marquardt, O.; Lewis, R. B.; Sinito, C.; Ramsteiner, M.; Trampert, A.; Jahn, U.; Geelhaar, L.; Brandt, O.; Fomin, V. M. Excitonic Aharonov-Bohm oscillations in core-shell nanowires. Adv. Mater. 2019, 31, 1805645.
Google Scholar
[13]
Mourik, V.; Zuo, K.; Frolov, S. M.; Plissard, S.; Bakkers, E. P. A. M.; Kouwenhoven, L. P. Signatures of Majorana fermions in hybrid superconductor-semiconductor nanowire devices. Science 2012, 336, 1003-1007.
Google Scholar
[14]
Zhang, H.; Liu, D. E.; Wimmer, M.; Kouwenhoven, L. P. Next steps of quantum transport in Majorana nanowire devices. Nat. Commun. 2019, 10, 5128.
Google Scholar
[15]
Świderski, M.; Zieliński, M. Electric field tuning of excitonic fine-structure splitting in asymmetric InAs/InP nanowire quantum dot molecules. Phys. Rev. B 2019, 100, 235417.
Google Scholar
[16]
Haffouz, S.; Zeuner, K. D.; Dalacu, D.; Poole, P. J.; Lapointe, J.; Poitras, D.; Mnaymneh, K.; Wu, X. H.; Couillard, M.; Korkusinski, M. et al. Bright single InAsP quantum dots at telecom wavelengths in position-controlled InP nanowires: The role of the photonic waveguide. Nano Lett. 2018, 18, 3047-3052.
Google Scholar
[17]
Björk, M. T.; Ohlsson, B. J.; Sass, T.; Persson, A. I.; Thelander, C.; Magnusson, M. H.; Deppert, K.; Wallenberg, L. R.; Samuelson, L. One-dimensional heterostructures in semiconductor nanowhiskers. Appl. Phys. Lett. 2002, 80, 1058-1060.
Google Scholar
[18]
Lauhon, L. J.; Gudiksen, M. S.; Wang, D. L.; Lieber, C. M. Epitaxial core-shell and core-multishell nanowire heterostructures. Nature 2002, 420, 57-61.
Google Scholar
[19]
Josefsson, M.; Svilans, A.; Burke, A. M.; Hoffmann, E. A.; Fahlvik, S.; Thelander, C.; Leijnse, M.; Linke, H. A quantum-dot heat engine operating close to the thermodynamic efficiency limits. Nat. Nanotechnol. 2018, 13, 920-924.
Google Scholar
[20]
LaPierre, R. R.; Chia, A. C. E.; Gibson, S. J.; Haapamaki, C. M.; Boulanger, J.; Yee, R.; Kuyanov, P.; Zhang, J.; Tajik, N.; Jewell, N. et al. III-V nanowire photovoltaics: Review of design for high efficiency. Phys. Status Solidi 2013, 7, 815-830.
Google Scholar
[21]
Yao, M. Q.; Cong, S.; Arab, S.; Huang, N. F.; Povinelli, M. L.; Cronin, S. B.; Dapkus, P. D.; Zhou, C. W. Tandem solar cells using GaAs nanowires on Si: Design, fabrication, and observation of voltage addition. Nano Lett. 2015, 15, 7217-7224.
Google Scholar
[22]
Zeng, X. L.; Otnes, G.; Heurlin, M.; Mourão, R. T.; Borgström, M. T. InP/GaInP nanowire tunnel diodes. Nano Res. 2018, 11, 2523-2531.
Google Scholar
[23]
Saxena, D.; Mokkapati, S.; Parkinson, P.; Jiang, N.; Gao, Q.; Tan, H. H.; Jagadish, C. Optically pumped room-temperature GaAs nanowire lasers. Nat. Photonics 2013, 7, 963-968.
Google Scholar
[24]
Ertekin, E.; Greaney, P. A.; Chrzan, D. C.; Sands, T. D. Equilibrium limits of coherency in strained nanowire heterostructures. J. Appl. Phys. 2005, 97, 114325.
Google Scholar
[25]
Ye, H.; Lu, P. F.; Yu, Z. Y.; Song, Y. X.; Wang, D. L.; Wang, S. M. Critical thickness and radius for axial heterostructure nanowires using finite-element method. Nano Lett. 2009, 9, 1921-1925.
Google Scholar
[26]
Glas, F. Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires. Phys. Rev. B 2006, 74, 121302.
Google Scholar
[27]
Glas, F. Strain in nanowires and nanowire heterostructures. Semicond. Semimet. 2015, 93, 79-123.
Google Scholar
[28]
Wallentin, J.; Jacobsson, D.; Osterhoff, M.; Borgstrom, M. T.; Salditt, T. Bending and twisting lattice tilt in strained core-shell nanowires revealed by nanofocused X-ray diffraction. Nano Lett. 2017, 17, 4143-4150.
Google Scholar
[29]
Sköld, N.; Wagner, J. B.; Karlsson, G.; Hernán, T.; Seifert, W.; Pistol, M. E.; Samuelson, L. Phase segregation in AlInP shells on GaAs nanowires. Nano Lett. 2006, 6, 2743-2747.
Google Scholar
[30]
Wen, C. Y.; Reuter, M. C.; Su, D.; Stach, E. A.; Ross, F. M. Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires. Nano Lett. 2015, 15, 1654-1659.
Google Scholar
[31]
Larsson, M. W.; Wagner, J. B.; Wallin, M.; Håkansson, P.; Fröberg, L. E.; Samuelson, L.; Reine Wallenberg, L. Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires. Nanotechnology 2007, 18, 015504.
Google Scholar
[32]
Schropp, A.; Hoppe, R.; Patommel, J.; Samberg, D.; Seiboth, F.; Stephan, S.; Wellenreuther, G.; Falkenberg, G.; Schroer, C. G. Hard X-ray scanning microscopy with coherent radiation: Beyond the resolution of conventional X-ray microscopes. Appl. Phys. Lett. 2012, 100, 253112.
Google Scholar
[33]
Döring, F.; Robisch, A. L.; Eberl, C.; Osterhoff, M.; Ruhlandt, A.; Liese, T.; Schlenkrich, F.; Hoffmann, S.; Bartels, M.; Salditt, T. et al. Sub-5 nm hard X-ray point focusing by a combined Kirkpatrick-Baez mirror and multilayer zone plate. Opt. Express 2013, 21, 19311-19323.
Google Scholar
[34]
Schülli, T. U.; Leake, S. J. X-ray nanobeam diffraction imaging of materials. Curr. Opin. Solid State Mater. Sci. 2018, 22, 188-201.
Google Scholar
[35]
Stankevič, T.; Hilner, E.; Seiboth, F.; Ciechonski, R.; Vescovi, G.; Kryliouk, O.; Johansson, U.; Samuelson, L.; Wellenreuther, G.; Falkenberg, G. et al. Fast strain mapping of nanowire light-emitting diodes using nanofocused X-ray beams. ACS Nano 2015, 9, 6978-6984.
Google Scholar
[36]
Biermanns, A.; Breuer, S.; Davydok, A.; Geelhaar, L.; Pietsch, U. Structural polytypism and residual strain in GaAs nanowires grown on Si(111) probed by single-nanowire X-ray diffraction. J. Appl. Cryst. 2012, 45, 239-244.
Google Scholar
[37]
Keplinger, M.; Mandl, B.; Kriegner, D.; Holý, V.; Samuelsson, L.; Bauer, G.; Deppert, K.; Stangl, J. X-ray diffraction strain analysis of a single axial InAs1-xPx nanowire segment. J. Synchrotron Radiat. 2015, 22, 59-66.
Google Scholar
[38]
Jacques, V. L. R.; Carbone, D.; Ghisleni, R.; Thilly, L. Counting dislocations in microcrystals by coherent X-ray diffraction. Phys. Rev. Lett. 2013, 111, 065503.
Google Scholar
[39]
Hrauda, N.; Zhang, J. J.; Wintersberger, E.; Etzelstorfer, T.; Mandl, B.; Stangl, J.; Carbone, D.; Holý, V.; Jovanović, V.; Biasotto, C. et al. X-ray nanodiffraction on a single sige quantum dot inside a functioning field-effect transistor. Nano Lett. 2011, 11, 2875-2880.
Google Scholar
[40]
Lazarev, S.; Dzhigaev, D.; Bi, Z. X.; Nowzari, A.; Kim, Y. Y.; Rose, M.; Zaluzhnyy, I. A.; Gorobtsov, O. Y.; Zozulya, A. V.; Lenrick, F. et al. Structural changes in a single GaN nanowire under applied voltage bias. Nano Lett. 2018, 18, 5446-5452.
Google Scholar
[41]
Wallentin, J.; Osterhoff, M.; Salditt, T. In operando X-ray nanodiffraction reveals electrically induced bending and lattice contraction in a single nanowire device. Adv. Mater. 2016, 28, 1788-1792.
Google Scholar
[42]
Eriksson, M.; van der Veen, J. F.; Quitmann, C. Diffraction-limited storage rings—A window to the science of tomorrow. J. Synchrotron Radiat. 2014, 21, 837-842.
Google Scholar
[43]
Vogt, U.; Parfeniukas, K.; Stankevič, T.; Kalbfleisch, S.; Liebi, M.; Matej, Z.; Björling, A.; Carbone, G.; Mikkelsen, A.; Johansson, U. First X-ray nanoimaging experiments at nanomax. In Proceedings of X-Ray Nanoimaging: Instruments and Methods III 2017, San Diego, USA, 2017; p 7.
[44]
Otnes, G.; Heurlin, M.; Graczyk, M.; Wallentin, J.; Jacobsson, D.; Berg, A.; Maximov, I.; Borgström, M. T. Strategies to obtain pattern fidelity in nanowire growth from large-area surfaces patterned using nanoimprint lithography. Nano Res. 2016, 9, 2852-2861.
Google Scholar
[45]
Björling, A.; Kalbfleisch, S.; Kahnt, M.; Sala, S.; Parfeniukas, K.; Vogt, U.; Carbone, D.; Johansson, U. Ptychographic characterization of a coherent nanofocused X-ray beam. Opt. Express 2020, 28, 5069-5076.
Google Scholar
[46]
Chahine, G. A.; Richard, M. I.; Homs-Regojo, R. A.; Tran-Caliste, T. N.; Carbone, D.; Jaques, V. L. R.; Grifone, R.; Boesecke, P.; Katzer, J.; Costina, I. et al. Imaging of strain and lattice orientation by quick scanning X-ray microscopy combined with three-dimensional reciprocal space mapping. J. Appl. Cryst. 2014, 47, 762-769.
Google Scholar
[47]
Troian, A.; Otnes, G.; Zeng, X. L.; Chayanun, L.; Dagytė, V.; Hammarberg, S.; Salomon, D.; Timm, R.; Mikkelsen, A.; Borgström, M. T. et al. Nanobeam X-ray fluorescence dopant mapping reveals dynamics of in situ Zn-doping in nanowires. Nano Lett. 2018, 18, 6461-6468.
Google Scholar
[48]
Otnes, G.; Heurlin, M.; Zeng, X. L.; Borgström, M. T. InxGa1-xP nanowire growth dynamics strongly affected by doping using diethylzinc. Nano Lett. 2017, 17, 702-707.
Google Scholar
[49]
Etzelstorfer, T.; Süess, M. J.; Schiefler, G. L.; Jacques, V. L. R.; Carbone, D.; Chrastina, D.; Isella, G.; Spolenak, R.; Stangl, J.; Sigg, H. et al. Scanning X-ray strain microscopy of inhomogeneously strained Ge micro-bridges. J. Synchrotron Radiat. 2014, 21, 111-118.
Google Scholar
[50]
Borgström, M. T.; Wallentin, J.; Trägårdh, J.; Ramvall, P.; Ek, M.; Wallenberg, L. R.; Samuelson, L.; Deppert, K. In situ etching for total control over axial and radial nanowire growth. Nano Res. 2010, 3, 264-270.
Google Scholar
[51]
Godard, P.; Carbone, G.; Allain, M.; Mastropietro, F.; Chen, G.; Capello, L.; Diaz, A.; Metzger, T. H.; Stangl, J.; Chamard, V. Three-dimensional high-resolution quantitative microscopy of extended crystals. Nat. Commun. 2011, 2, 568.
Google Scholar
[52]
Robinson, I.; Harder, R. Coherent X-ray diffraction imaging of strain at the nanoscale. Nat. Mater. 2009, 8, 291-298.
Google Scholar
[53]
Bunk, O.; Bech, M.; Jensen, T. H.; Feidenhans’l, R.; Binderup, T.; Menzel, A.; Pfeiffer, F. Multimodal X-ray scatter imaging. New J. Phys. 2009, 11, 123016.
Google Scholar
[54]
Bajt, S.; Prasciolu, M.; Fleckenstein, H.; Domaracký, M.; Chapman, H. N.; Morgan, A. J.; Yefanov, O.; Messerschmidt, M.; Du, Y.; Murray, K. T. et al. X-ray focusing with efficient high-NA multilayer laue lenses. Light Sci. Appl. 2018, 7, 17162.
Google Scholar
[55]
Hill, M. O.; Calvo-Almazan, I.; Allain, M.; Holt, M. V.; Ulvestad, A.; Treu, J.; Koblmuller, G.; Huang, C. Y.; Huang, X. J.; Yan, H. F. et al. Measuring three-dimensional strain and structural defects in a single InGaAs nanowire using coherent X-ray multiangle Bragg projection ptychography. Nano Lett. 2018, 18, 811-819.
Google Scholar
[56]
Pfeifer, M. A.; Williams, G. J.; Vartanyants, I. A.; Harder, R.; Robinson, I. K. Three-dimensional mapping of a deformation field inside a nanocrystal. Nature 2006, 442, 63-66.
Google Scholar
[57]
Björling, A.; Carbone, D.; Sarabia, F. J.; Hammarberg, S.; Feliu, J. M.; Solla-Gullón, J. Coherent Bragg imaging of 60 nm Au nanoparticles under electrochemical control at the nanomax beamline. J. Synchrotron Radiat. 2019, 26, 1830-1834.
Google Scholar
[58]
Jacobsson, D.; Persson, J. M.; Kriegner, D.; Etzelstorfer, T.; Wallentin, J.; Wagner, J. B.; Stangl, J.; Samuelson, L.; Deppert, K.; Borgström, M. T. Particle-assisted GaxIn1-xP nanowire growth for designed bandgap structures. Nanotechnology 2012, 23, 245601.
Google Scholar
Nano Research
Volume 13 Issue 9,
September 2020
Pages 2460-2468
DOI: 10.1007/s12274-020-2878-6
Cite this article:
Hammarberg S, Dagytė V, Chayanun L, et al. High resolution strain mapping of a single axially heterostructured nanowire using scanning X-ray diffraction. Nano Research, 2020, 13(9): 2460-2468. https://doi.org/10.1007/s12274-020-2878-6
Topics:
IIIIndium phosphideNanowiresOptoelectronic devicesSemiconducting indium phosphide Semiconductor alloysV semiconductorsX-ray diffraction

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Received: 27 March 2020
Revised: 12 May 2020
Accepted: 13 May 2020
Published: 21 June 2020
© The author(s) 2020

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