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Research Article | Open Access

High resolution strain mapping of a single axially heterostructured nanowire using scanning X-ray diffraction

Susanna Hammarberg1( ), Vilgailė Dagytė2, Lert Chayanun1, Megan O. Hill3, Alexander Wyke1, Alexander Björling4, Ulf Johansson4, Sebastian Kalbfleisch4, Magnus Heurlin2, Lincoln J. Lauhon3, Magnus T. Borgström2, Jesper Wallentin1
Synchrotron Radiation Research and NanoLund, Lund University, Box 118, Lund 221 00, Sweden
Solid State Physics and NanoLund, Lund University, Box 118, Lund 221 00, Sweden
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
MAX IV Laboratory, Lund University, Box 118, Lund 221 00, Sweden
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Graphical Abstract

Abstract

Axially heterostructured nanowires are a promising platform for next generation electronic and optoelectronic devices. Reports based on theoretical modeling have predicted more complex strain distributions and increased critical layer thicknesses than in thin films, due to lateral strain relaxation at the surface, but the understanding of the growth and strain distributions in these complex structures is hampered by the lack of high-resolution characterization techniques. Here, we demonstrate strain mapping of an axially segmented GaInP-InP 190 nm diameter nanowire heterostructure using scanning X-ray diffraction. We systematically investigate the strain distribution and lattice tilt in three different segment lengths from 45 to 170 nm, obtaining strain maps with about 10-4 relative strain sensitivity. The experiments were performed using the 90 nm diameter nanofocus at the NanoMAX beamline, taking advantage of the high coherent flux from the first diffraction limited storage ring MAX IV. The experimental results are in good agreement with a full simulation of the experiment based on a three-dimensional (3D) finite element model. The largest segments show a complex profile, where the lateral strain relaxation at the surface leads to a dome-shaped strain distribution from the mismatched interfaces, and a change from tensile to compressive strain within a single segment. The lattice tilt maps show a cross-shaped profile with excellent qualitative and quantitative agreement with the simulations. In contrast, the shortest measured InP segment is almost fully adapted to the surrounding GaInP segments.

Keywords

strain mappingnanowireheterostructureX-ray diffraction (XRD)MAX IVfinite element modeling

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Nano Research
Volume 13 Issue 9,
September 2020
Pages 2460-2468
DOI: 10.1007/s12274-020-2878-6
Cite this article:
Hammarberg S, Dagytė V, Chayanun L, et al. High resolution strain mapping of a single axially heterostructured nanowire using scanning X-ray diffraction. Nano Research, 2020, 13(9): 2460-2468. https://doi.org/10.1007/s12274-020-2878-6
Topics:
IIIIndium phosphideNanowiresOptoelectronic devicesSemiconducting indium phosphide Semiconductor alloysV semiconductorsX-ray diffraction

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Received: 27 March 2020
Revised: 12 May 2020
Accepted: 13 May 2020
Published: 21 June 2020
© The author(s) 2020

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