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Research Article

Structurally and chemically compatible BiInSe3 substrate for topological insulator thin films

Xiong Yao1, Jisoo Moon2, Sang-Wook Cheong1, Seongshik Oh1( )
Center for Quantum Materials Synthesis and Department of Physics & Astronomy, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854, USA
Department of Physics & Astronomy, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854, USA
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Abstract

Quality of epitaxial films strongly depends on their structural and chemical match with the substrates: The more closely they match, the better the film quality is. Topological insulators (TI) such as Bi2Se3 thin films are of no exception. However, there do not exist commercial substrates that match with TI films both structurally and chemically, at the level commonly available for other electronic materials. Here, we introduce BiInSe3 bulk crystal as the best substrate for Bi2Se3 thin films. These films exhibit superior surface morphology, lower defect density and higher Hall mobility than those on other substrates, due to structural and chemical match provided by the BiInSe3 substrate. BiInSe3 substrate could accelerate the advance of TI research and applications.

Keywords

topological insulatorsubstratematchepitaxyBi2Se3BiInSe3

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Nano Research
Volume 13 Issue 9,
September 2020
Pages 2541-2545
DOI: 10.1007/s12274-020-2894-6
Cite this article:
Yao X, Moon J, Cheong S-W, et al. Structurally and chemically compatible BiInSe3 substrate for topological insulator thin films. Nano Research, 2020, 13(9): 2541-2545. https://doi.org/10.1007/s12274-020-2894-6
Topics:
Bismuth compoundsIndium compoundsMorphologySelenium compoundsSurface morphology

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Received: 24 January 2020
Revised: 20 May 2020
Accepted: 21 May 2020
Published: 22 June 2020
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020
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