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Research Article

Strain engineering in single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2

Felix Carrascoso§, Hao Li§, Riccardo Frisenda( ), Andres Castellanos-Gomez ( )
Materials Science Factory, Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, 28049 Madrid, Spain

§ Felix Carrascoso and Hao Li contributed equally to this work.

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Abstract

Strain is a powerful tool to modify the optical properties of semiconducting transition metal dichalcogenides like MoS2, MoSe2, WS2 and WSe2. In this work we provide a thorough description of the technical details to perform uniaxial strain measurements on these two-dimensional semiconductors and we provide a straightforward calibration method to determine the amount of applied strain with high accuracy. We then employ reflectance spectroscopy to analyze the strain tunability of the electronic properties of single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2. Finally, we quantify the flake-to-flake variability by analyzing 15 different single-layer MoS2 flakes.

Keywords

two-dimensional (2D) materialstransition metal dichalcogenidesstrain engineeringband gapdifferential reflectance

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Nano Research
Volume 14 Issue 6,
June 2021
Pages 1698-1703
DOI: 10.1007/s12274-020-2918-2
Cite this article:
Carrascoso F, Li H, Frisenda R, et al. Strain engineering in single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2. Nano Research, 2021, 14(6): 1698-1703. https://doi.org/10.1007/s12274-020-2918-2
Topics:
Layered semiconductorsMolybdenum compoundsOptical propertiesSelenium compoundsTransition metalsTungsten compounds
Part of a topical collection:
NR45 Awards in 2D Materials, 2021

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Received: 28 April 2020
Revised: 23 May 2020
Accepted: 05 June 2020
Published: 03 July 2020
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature
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