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Review Article

Surface charge transfer doping for two-dimensional semiconductor- based electronic and optoelectronic devices

Yanan Wang1,§, Yue Zheng1,2,§, Cheng Han2( ), Wei Chen1,3,4,5( )
Department of Physics, National University of Singapore, Singapore 117542, Singapore
SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, China
National University of Singapore (Suzhou) Research Institute, Suzhou 215123, China

§ Yanan Wang and Yue Zheng contributed equally to this work.

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Graphical Abstract

Abstract

Doping of semiconductors, i.e., accurately modulating the charge carrier type and concentration in a controllable manner, is a key technology foundation for modern electronics and optoelectronics. However, the conventional doping technologies widely utilized in silicon industry, such as ion implantation and thermal diffusion, always fail when applied to two-dimensional (2D) materials with atomically-thin nature. Surface charge transfer doping (SCTD) is emerging as an effective and non-destructive doping technique to provide reliable doping capability for 2D materials, in particular 2D semiconductors. Herein, we summarize the recent advances and developments on the SCTD of 2D semiconductors and its application in electronic and optoelectronic devices. The underlying mechanism of STCD processes on 2D semiconductors is briefly introduced. Its impact on tuning the fundamental properties of various 2D systems is highlighted. We particularly emphasize on the SCTD-enabled high-performance 2D functional devices. Finally, the challenges and opportunities for the future development of SCTD are discussed.

Keywords

surface charge transfer dopingtwo-dimensional (2D) semiconductorsproperty modulationelectronic devicesoptoelectronic devices

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Nano Research
Volume 14 Issue 6,
June 2021
Pages 1682-1697
DOI: 10.1007/s12274-020-2919-1
Cite this article:
Wang Y, Zheng Y, Han C, et al. Surface charge transfer doping for two-dimensional semiconductor- based electronic and optoelectronic devices. Nano Research, 2021, 14(6): 1682-1697. https://doi.org/10.1007/s12274-020-2919-1
Topics:
Charge transferOptoelectronic devicesSemiconductor devices Semiconductor doping
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NR45 Awards in 2D Materials, 2021

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Received: 29 April 2020
Revised: 22 May 2020
Accepted: 05 June 2020
Published: 10 July 2020
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature
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