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Research Article

Gate-tunable linear magnetoresistance in molybdenum disulfide field-effect transistors with graphene insertion layer

Hao Huang1,§, Hongming Guan2,§, Meng Su1, Xiaoyue Zhang2, Yuan Liu3, Chuansheng Liu1, Zhihong Zhang2, Kaihui Liu2, Lei Liao1,3( ), Ning Tang2( )
School of Physics and Technology, Wuhan University, Wuhan 430072, China
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China

§ Hao Huang and Hongming Guan contributed equally to this work.

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Graphical Abstract

Abstract

Molybdenum disulfide (MoS2) holds great promise as atomically thin two-dimensional (2D) semiconductor for future electronics and opto-electronics. In this report, we study the magnetoresistance (MR) of MoS2 field-effect transistors (FETs) with graphene insertion layer at the contact interface. Owing to the unique device structure and high-quality contact interface, a gate-tunable linear MR up to 67% is observed at 2 K. By comparing with the MRs of graphene FETs and MoS2 FETs with conventional metal contact, it is found that this unusual MR is most likely to be originated from the contact interfaces between graphene and MoS2, and can be explained by the classical linear MR model caused by spatial fluctuation of carrier mobility. Our study demonstrates large MR responses in MoS2-based systems through heterojunction design, shedding lights for the future magneto-electronics and van der Waals heterostructures.

Keywords

molybdenum disulfide (MoS2)contactlinear magnetoresistancegraphene insertion layermobility

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Nano Research
Volume 14 Issue 6,
June 2021
Pages 1814-1818
DOI: 10.1007/s12274-020-2922-6
Cite this article:
Huang H, Guan H, Su M, et al. Gate-tunable linear magnetoresistance in molybdenum disulfide field-effect transistors with graphene insertion layer. Nano Research, 2021, 14(6): 1814-1818. https://doi.org/10.1007/s12274-020-2922-6
Topics:
GrapheneGraphene transistorsHeterojunctionsLayered semiconductorsMolybdenum compoundsSulfur compoundsVan der Waals forces
Part of a topical collection:
NR45 Awards in 2D Materials, 2021

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Received: 10 February 2020
Revised: 25 March 2020
Accepted: 05 June 2020
Published: 03 July 2020
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature
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