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Research Article

Broadband electroluminescence from reverse breakdown in individual suspended carbon nanotube pn-junctions

Bo Wang1, Sisi Yang1, Yu Wang3, Younghee Kim4, Ragib Ahsan2, Rehan Kapadia2, Stephen K. Doorn4, Han Htoon4, Stephen B. Cronin1,2( )
Department of Physics and Astronomy, University of Southern California, Los Angeles, CA 90089, USA
Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA 90089, USA
Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA 90089, USA
Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA
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Graphical Abstract

Abstract

There are various mechanisms of light emission in carbon nanotubes (CNTs), which give rise to a wide range of spectral emission characteristics that provide important information regarding the underlying physical processes that lead to photon emission. Here, we report spectra obtained from individual suspended CNT dual-gate field effect transistor (FET) devices under different gate and bias conditions. By applying opposite voltages to the gate electrodes (i.e., Vg1 = -Vg2), we are able to create a pn-junction within the suspended region of the CNT. Under forward bias conditions, the spectra exhibit a peak corresponding to E11 exciton emission via thermal (i.e., blackbody) emission occurring at electrical powers around 8 µW, which corresponds to a power density of approximately 0.5 MW/cm2. On the other hand, the spectra observed under reverse bias correspond to impact ionization and avalanche emission, which occurs at electrical powers of ~ 10 nW and exhibits a featureless flat spectrum extending from 1,600 nm to shorter wavelengths up to 600 nm. Here, the hot electrons generated by the high electric fields (~ 0.5 MV/cm) are able to produce high energy photons far above the E11 (ground state) energy. It is somewhat surprising that these devices do not exhibit light emission by the annihilation of electrons and holes under forward bias, as in a light emitting diode (LED). Possible reasons for this are discussed, including Auger recombination.

Keywords

ballisticavalanchehigh-fieldband-to-bandphotoemission

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Nano Research
Volume 13 Issue 10,
October 2020
Pages 2857-2861
DOI: 10.1007/s12274-020-2941-3
Cite this article:
Wang B, Yang S, Wang Y, et al. Broadband electroluminescence from reverse breakdown in individual suspended carbon nanotube pn-junctions. Nano Research, 2020, 13(10): 2857-2861. https://doi.org/10.1007/s12274-020-2941-3
Topics:
Nano unitCarbon nanotubesElectric fields Field effect transistorsLightLight emission PhotonsRefractory metal compoundsSemiconductor junctions

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Received: 14 November 2019
Revised: 06 June 2020
Accepted: 19 June 2020
Published: 05 October 2020
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020
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