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Research Article

Tuning the inhomogeneous charge transport in ZnO interfaces for ultrahigh on/off ratio top-gated field-effect-transistor arrays

Thanh Luan Phan1, Dinh Loc Duong2,3, Tuan Khanh Chau2,3, Sidi Fan2,3, Won Tae Kang1, Thi Suong Le2,3, Hyun Yong Song2,3, Linfeng Sun3, Van Tu Vu1, Min Ji Lee1, Quoc An Vu2,3, Young Hee Lee2,3,4, Woo Jong Yu1( )
Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea
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Graphical Abstract

Abstract

The interface between oxide/oxide layers shows an inhomogeneous charge transport behavior, which reveals a high conductivity owing to interface-doped. One typical example is the hetero-interface between ZnO film and other wide band gap oxides (e.g., Al2O3, TiO2, and HfO2). It is thus quite evident that the ZnO/other oxides hetero-interface contains high density electron carriers effectively screening the gate-induced electric field. Thus, an extremely weak gate modulation in ZnO film was showed, resulting in very low on/off ratio of 1.69 in top-gate field-effect-transistor (TG-FET) configuration. So, to extend the usage of ZnO TG-FET is not quite possible toward further practical application. Herein, we clarified the correlation of inhomogeneous region in oxide/oxide hetero-junction by systematically study. Our work suggests that a self-assembly of molecules (SAM) buffer layer is suitable for tuning the inhomogeneous charge transport in ZnO film, which not only reduces the interface trap density, but also effectively enhances the gate electric field modulation at the hetero-interface. We further report the robust fabrication of TG-FET arrays based on ZnO thin film, using an ultra-thin alkylphosphonic acid molecule monolayer as buffer layer. Our device demonstrates a pronounced ultrahigh on/off ratio of ≥ 108, which is 8-order of magnitude higher than that of a device without buffer layer. For the highly reliable arrays, our device exhibits a high yield of over 93% with an average on/off ratio of ~107 across the entire wafer scale, mobility (18.5 cm2/(V·s)), an extended bias-stressing (~ 2,000 s) and long-stability (~ 150 days) under ambient conditions.

Keywords

interface engineeringzinc oxidesthin-film field-effect-transistorself-assembly moleculeinhomogeneous charge transport

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Nano Research
Volume 13 Issue 11,
November 2020
Pages 3033-3040
DOI: 10.1007/s12274-020-2968-5
Cite this article:
Phan TL, Duong DL, Chau TK, et al. Tuning the inhomogeneous charge transport in ZnO interfaces for ultrahigh on/off ratio top-gated field-effect-transistor arrays. Nano Research, 2020, 13(11): 3033-3040. https://doi.org/10.1007/s12274-020-2968-5
Topics:
Aluminum OxideElectric fields Energy gapField effect transistorsIIMetallic films Oxide mineralsSelf assemblyThin filmsTitanium DioxideVI semiconductorsWide band gap semiconductors

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Received: 08 June 2020
Accepted: 01 July 2020
Published: 08 August 2020
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020
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