Fabrication and manipulation of nanosized graphene homojunction with atomically-controlled boundaries

Hui Chen; De-Liang Bao; Dongfei Wang; Yande Que; Wende Xiao; Yu-Yang Zhang; Jiatao Sun; Shixuan Du; Hong-Jun Gao

doi:10.1007/s12274-020-3004-5

AI Chat Paper

Note: Please note that the following content is generated by AMiner AI. SciOpen does not take any responsibility related to this content.

Chat more with AI

| Sign up

Browse by Subject

Search for peer-reviewed journals with full access.

Journals A - Z

About Us

Discover the SciOpen Platform and Achieve Your Research Goals with Ease.

About Us

Publish with Us

Support

Search articles, authors, keywords, DOl and etc.

Published Date

Reset Search

{{expandStatus?'Exit ':''}}Advanced Search

Journals A - Z

About Us

Publish with Us

Support

Article Link

Cite

EndNote(RIS) BibTeX

Collect

Submit Manuscript

Show Outline

Outline

Show full outline

Hide outline

Outline

Show full outline

Hide outline

Research Article

Fabrication and manipulation of nanosized graphene homojunction with atomically-controlled boundaries

Hui Chen^{¹^,²^,^§}, De-Liang Bao^{¹^,²^,^§}, Dongfei Wang^{¹^,²}, Yande Que^¹, Wende Xiao^¹, Yu-Yang Zhang^{¹^,²}, Jiatao Sun^{¹^,²}, Shixuan Du^{¹^,²}(

), Hong-Jun Gao^{¹^,²}(

)

1Institute of Physics and University of Chinese Academy of Sciences, Beijing 100190, China

2CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100049, China

^§Hui Chen and De-Liang Bao contributed equally to this work.

Show Author Information

Graphical Abstract

Abstract

Controlling the atomic configurations of structural defects in graphene nanostructures is crucial for achieving desired functionalities. Here, we report the controlled fabrication of high-quality single-crystal and bicrystal graphene nanoislands (GNI) through a unique top-down etching and post-annealing procedure on a graphite surface. Low-temperature scanning tunneling microscopy (STM) combined with density functional theory calculations reveal that most of grain boundaries (GBs) formed on the bicrystal GNIs are 5-7-5-7 GBs. Two nanodomains separated by a 5-7-5-7 GB are AB stacking and twisted stacking with respect to the underlying graphite substrate and exhibit distinct electronic properties, forming a graphene homojunction. In addition, we construct homojunctions with alternative AB/twisted stacking nanodomains separated by parallel 5-7-5-7 GBs. Remarkably, the stacking orders of homojunctions are manipulated from AB/twist into twist/twist type through a STM tip. The controllable fabrication and manipulation of graphene homojunctions with 5-7-5-7 GBs and distinct stacking orders open an avenue for the construction of GBs-based devices in valleytronics and twistronics.

Keywords

homojunction graphene nanoislands manipulations grain boundaries twisted stacking

Electronic Supplementary Material

Download File(s)

12274_2020_3004_MOESM1_ESM.pdf (4.8 MB)

References

[1]

Mishra,

; D.

Beyer,

; K.

Eimre,

; S.

Kezilebieke,

; R.

Berger,

; O.

Gröning,

; C. A.

Pignedoli,

; K.

Müllen,

; P.

Liljeroth,

et al. Topological frustration induces unconventional magnetism in a nanographene. Nat. Nanotechnol. 2020, 15, 81.

Google Scholar

[2]

J. D.

Cox,

; F. J.

García de Abajo,

Nonlinear interactions between free electrons and nanographenes. Nano Lett. 2020, 20, 4792-4800.

Google Scholar

[3]

J. D.

Cox,

; F. J. G.

de Abajo,

Single-plasmon thermo-optical switching in graphene. Nano Lett. 2019, 19, 3743-3750.

Google Scholar

[4]

Su,

; M.

Telychko,

; P.

Hu,

; G.

Macam,

; P.

Mutombo,

; H. J.

Zhang,

; Y.

Bao,

; F.

Cheng,

; Z. Q.

Huang,

; Z. Z.

Qiu,

et al. Atomically precise bottom-up synthesis of π-extended [5]triangulene. Sci. Adv. 2019, 5, eaav7717.

Google Scholar

[5]

Chen,

; Y. D.

Que,

; L.

Tao,

; Y. Y.

Zhang,

; X.

Lin,

; W. D.

Xiao,

; D. F.

Wang,

; S. X.

Du,

; S. T.

Pantelides,

; H. J.

Gao,

Recovery of edge states of graphene nanoislands on an iridium substrate by silicon intercalation. Nano Res. 2018, 11, 3722-3729.

Google Scholar

[6]

Pavliček,

; A.

Mistry,

; Z.

Majzik,

; N.

Moll,

; G.

Meyer,

; D. J.

Fox,

; L.

Gross,

Synthesis and characterization of triangulene. Nat. Nanotechnol. 2017, 12, 308-311.

Google Scholar

[7]

Leicht,

; L.

Zielke,

; S.

Bouvron,

; R.

Moroni,

; E.

Voloshina,

; L.

Hammerschmidt,

; Y. S.

Dedkov,

; M.

Fonin,

In situ fabrication of quasi-free-standing epitaxial graphene nanoflakes on gold. ACS Nano 2014, 8, 3735-3742.

Google Scholar

[8]

S. H.

Phark,

; J.

Borme,

; A. L.

Vanegas,

; M.

Corbetta,

; D.

Sander,

; J.

Kirschner,

Direct observation of electron confinement in epitaxial graphene nanoislands. ACS Nano 2011, 5, 8162-8166.

Google Scholar

[9]

Fernández-Rossier,

; J. J.

Palacios,

Magnetism in graphene nanoislands. Phys. Rev. Lett. 2007, 99, 177204.

Google Scholar

[10]

X. F.

Feng,

; S.

Kwon,

; J. Y.

Park,

; M.

Salmeron,

Superlubric sliding of graphene nanoflakes on graphene. ACS Nano 2013, 7, 1718-1724.

Google Scholar

[11]

S. Z.

Zhu,

; T.

Li,

Hydrogenation-assisted graphene origami and its application in programmable molecular mass uptake, storage, and release. ACS Nano 2014, 8, 2864-2872.

Google Scholar

[12]

Chen,

; X. L.

Zhang,

; Y. Y.

Zhang,

; D. F.

Wang,

; D. L.

Bao,

; Y. D.

Que,

; W. D.

Xiao,

; S. X.

Du,

; M.

Ouyang,

; S. T.

Pantelides,

et al. Atomically precise, custom-design origami graphene nanostructures. Science 2019, 365, 1036-1040.

Google Scholar

[13]

P. M.

Wilson,

; G. N.

Mbah,

; T. G.

Smith,

; D.

Schmidt,

; R. Y.

Lai,

; T.

Hofmann,

; A.

Sinitskii,

Three-dimensional periodic graphene nanostructures. J. Mater. Chem. C 2014, 2, 1879-1886.

Google Scholar

[14]

S. J.

Heerema,

; C.

Dekker,

Graphene nanodevices for DNA sequencing. Nat. Nanotechnol. 2016, 11, 127-136.

Google Scholar

[15]

A. K.

Majee,

; A.

Kommini,

; Z.

Aksamija,

Electronic transport and thermopower in 2D and 3D heterostructures—A theory perspective. Ann. Phys. 2019, 531, 1800510.

Google Scholar

[16]

O. V.

Yazyev,

; S. G.

Louie,

Electronic transport in polycrystalline graphene. Nat. Mater. 2010, 9, 806-809.

Google Scholar

[17]

Gunlycke,

; C. T.

White,

Graphene valley filter using a line defect. Phys. Rev. Lett. 2011, 106, 136806.

Google Scholar

[18]

J. H.

Chen,

; G.

Autès,

; N.

Alem,

; F.

Gargiulo,

; A.

Gautam,

; M.

Linck,

; C.

Kisielowski,

; O. V.

Yazyev,

; S. G.

Louie,

; A.

Zettl,

Controlled growth of a line defect in graphene and implications for gate-tunable valley filtering. Phys. Rev. B 2014, 89, 121407(R).

Google Scholar

[19]

Xu,

; G. W.

Yuan,

; Q.

Zhu,

; J. W.

Wang,

; S.

Tang,

; L. B.

Gao,

Enhancing the strength of graphene by a denser grain boundary. ACS Nano 2018, 12, 4529-4535.

Google Scholar

[20]

S. S.

Alexandre,

; A. D.

Lúcio,

; A. H. C.

Neto,

; R. W.

Nunes,

Correlated magnetic states in extended one-dimensional defects in graphene. Nano Lett. 2012, 12, 5097-5102.

Google Scholar

[21]

L. Z.

Kou,

; C.

Tang,

; W. L.

Guo,

; C. F.

Chen,

Tunable magnetism in strained graphene with topological line defect. ACS Nano 2011, 5, 1012-1017.

Google Scholar

[22]

H. C.

Wu,

; A. N.

Chaika,

; M. C.

Hsu,

; T. W.

Huang,

; M.

Abid,

; M.

Abid,

; V. Y.

Aristov,

; O. V.

Molodtsova,

; S. V.

Babenkov,

; Y. R.

Niu,

et al. Large positive in-plane magnetoresistance induced by localized states at nanodomain boundaries in graphene. Nat. Commun. 2017, 8, 14453.

Google Scholar

[23]

Gunlycke,

; S.

Vasudevan,

; C. T.

White,

Confinement, transport gap, and valley polarization in graphene from two parallel decorated line defects. Nano Lett. 2013, 13, 259-263.

Google Scholar

[24]

L. P.

Biró,

; P.

Lambin,

Grain boundaries in graphene grown by chemical vapor deposition. New J. Phys. 2013, 15, 035024.

Google Scholar

[25]

Tison,

; J.

Lagoute,

; V.

Repain,

; C.

Chacon,

; Y.

Girard,

; F.

Joucken,

; R.

Sporken,

; F.

Gargiulo,

; O. V.

Yazyev,

; S.

Rousset,

Grain boundaries in graphene on SiC(0001) substrate. Nano Lett. 2014, 14, 6382-6386.

Google Scholar

[26]

Yang,

; H.

Xu,

; J.

Lu,

; K. P.

Loh,

Periodic grain boundaries formed by thermal reconstruction of polycrystalline graphene film. J. Am. Chem. Soc. 2014, 136, 12041-12046.

Google Scholar

[27]

Y. B.

Chen,

; J. Y.

Sun,

; J. F.

Gao,

; F.

Du,

; Q.

Han,

; Y. F.

Nie,

; Z. L.

Chen,

; A.

Bachmatiuk,

; M. K.

Priydarshi,

; D. L.

Ma,

et al. Growing uniform graphene disks and films on molten glass for heating devices and cell culture. Adv. Mater. 2015, 27, 7839-7846.

Google Scholar

[28]

O. V.

Yazyev,

; S. G.

Louie,

Topological defects in graphene: Dislocations and grain boundaries. Phys. Rev. B 2010, 81, 195420.

Google Scholar

[29]

M. I.

Katsnelson,

; K. S.

Novoselov,

; A. K.

Geim,

Chiral tunnelling and the klein paradox in graphene. Nat. Phys. 2006, 2, 620-625.

Google Scholar

[30]

Cao,

; V.

Fatemi,

; S. A.

Fang,

; K.

Watanabe,

; T.

Taniguchi,

; E.

Kaxiras,

; P.

Jarillo-Herrero,

Unconventional superconductivity in magic-angle graphene superlattices. Nature 2018, 556, 43-50.

Google Scholar

[31]

Cao,

; V.

Fatemi,

; A.

Demir,

; S. A.

Fang,

; S. L.

Tomarken,

; J. Y.

Luo,

; J. D.

Sanchez-Yamagishi,

; K.

Watanabe,

; T.

Taniguchi,

; E.

Kaxiras,

et al. Correlated insulator behaviour at half-filling in magic-angle graphene superlattices. Nature 2018, 556, 80-84.

Google Scholar

[32]

A. L.

Sharpe,

; E. J.

Fox,

; A. W.

Barnard,

; J.

Finney,

; K.

Watanabe,

; T.

Taniguchi,

; M. A.

Kastner,

; D.

Goldhaber-Gordon,

Emergent ferromagnetism near three-quarters filling in twisted bilayer graphene. Science 2019, 365, 605-608.

Google Scholar

[33]

J. H.

Lin,

; W. J.

Fang,

; W.

Zhou,

; A. R.

Lupini,

; J. C.

Idrobo,

; J.

Kong,

; S. J.

Pennycook,

; S. T.

Pantelides,

AC/AB stacking boundaries in bilayer graphene. Nano Lett. 2013, 13, 3262-3268.

Google Scholar

[34]

C. J.

Kim,

; A.

Sánchez-Castillo,

; Z.

Ziegler,

; Y.

Ogawa,

; C.

Noguez,

; J.

Park,

Chiral atomically thin films. Nat. Nanotechnol. 2016, 11, 520-524.

Google Scholar

[35]

Hikino,

; S.

Yunoki,

Anomalous enhancement of spin Hall conductivity in a superconductor/normal-metal junction. Phys. Rev. B 2011, 84, 020512(R).

Google Scholar

[36]

Yang,

; L. C.

Zhang,

; Y.

Wang,

; Z. W.

Shi,

; D. X.

Shi,

; H. J.

Gao,

; E. G.

Wang,

; G. Y.

Zhang,

An anisotropic etching effect in the graphene basal plane. Adv. Mater. 2010, 22, 4014-4019.

Google Scholar

[37]

Kresse,

; D.

Joubert,

From ultrasoft pseudopotentials to the projector augmented-wave method. Phys. Rev. B 1999, 59, 1758-1775.

Google Scholar

[38]

Vanderbilt,

Soft self-consistent pseudopotentials in a generalized eigenvalue formalism. Phys. Rev. B 1990, 41, 7892-7895.

Google Scholar

[39]

Kresse,

; J.

Furthmüller,

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 1996, 54, 11169-11186.

Google Scholar

[40]

J. P.

Perdew,

; A.

Zunger,

Self-interaction correction to density-functional approximations for many-electron systems. Phys. Rev. B 1981, 23, 5048-5079.

Google Scholar

Nano Research

Volume 13 Issue 12,
December 2020

Pages 3286-3291

DOI: 10.1007/s12274-020-3004-5

Cite this article:

Chen H, Bao D-L, Wang D, et al. Fabrication and manipulation of nanosized graphene homojunction with atomically-controlled boundaries. Nano Research, 2020, 13(12): 3286-3291. https://doi.org/10.1007/s12274-020-3004-5

Topics:

Crystal atomic structure Density functional theory Electronic properties Etching Fabrication Grain boundaries Graphene Graphite Scanning tunneling microscopy Single crystals Substrates Temperature

908

Views

Crossref

N/A

Web of Science

Scopus

CSCD

Google Scholar
Citation

Altmetrics

Received: 24 May 2020

Revised: 13 July 2020

Accepted: 21 July 2020

Published: 04 September 2020