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Research Article

Crypto primitive of MOCVD MoS2 transistors for highly secured physical unclonable functions

Bangjie Shao1, Tsz Hin Choy1, Feichi Zhou1, Jiewei Chen1, Cong Wang1, Yong Ju Park2, Jong-Hyun Ahn2( ), Yang Chai1( )
Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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Graphical Abstract

Abstract

Physically unclonable crypto primitives have potential applications for anti-counterfeiting, identification, and authentication, which are clone proof and resistant to variously physical attack. Conventional physical unclonable function (PUF) based on Si complementary metal-oxide-semiconductor (CMOS) technologies greatly suffers from entropy loss and bit instability due to noise sensitivity. Here we grow atomically thick MoS2 thin film and fabricate field-effect transistors (FETs). The inherently physical randomness of MoS2 transistors from materials growth and device fabrication process makes it appropriate for the application of PUF device. We perform electrical characterizations of MoS2 FETs, collect the data from 448 devices, and generate PUF keys by splitting drain current at specific levels to evaluate the response performance. Proper selection of splitting threshold enables to generate binary, ternary, and double binary keys. The generated PUF keys exhibit good randomness and uniqueness, providing a possibility for harvesting highly secured PUF devices with two-dimensional materials.

Keywords

two-dimensional materialstransition metal dichalcogenidesfield-effect transistorphysical unclonable functionmetal-organic chemical vapor deposition

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Nano Research
Volume 14 Issue 6,
June 2021
Pages 1784-1788
DOI: 10.1007/s12274-020-3033-0
Cite this article:
Shao B, Choy TH, Zhou F, et al. Crypto primitive of MOCVD MoS2 transistors for highly secured physical unclonable functions. Nano Research, 2021, 14(6): 1784-1788. https://doi.org/10.1007/s12274-020-3033-0
Topics:
CMOS integrated circuitsField effect transistorsLayered semiconductorsMetalsMolybdenum compoundsMOS devicesOxide semiconductorsSilicon compounds
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NR45 Awards in 2D Materials, 2021

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Received: 14 May 2020
Revised: 04 August 2020
Accepted: 04 August 2020
Published: 02 September 2020
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature
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