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Research Article

Intrinsic carrier multiplication in layered Bi2O2Se avalanche photodiodes with gain bandwidth product exceeding 1 GHz

Vinod K. Sangwan1, Joohoon Kang1,†, David Lam1, J. Tyler Gish1, Spencer A. Wells1, Jan Luxa2, James P. Male1, G. Jeffrey Snyder1, Zdeněk Sofer2, Mark C. Hersam1,3,4( )
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technicka 5, 166 28 Prague 6, Czech Republic
Department of Chemistry, Northwestern University, Evanston, IL 60208, USA
Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208, USA

† Present address: School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea

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Abstract

Emerging layered semiconductors present multiple advantages for optoelectronic technologies including high carrier mobilities, strong light-matter interactions, and tunable optical absorption and emission. Here, metal-semiconductor-metal avalanche photodiodes (APDs) are fabricated from Bi2O2Se crystals, which consist of electrostatically bound [Bi2O2]2+ and [Se]2- layers. The resulting APDs possess an intrinsic carrier multiplication factor up to 400 at 7 K with a responsivity gain exceeding 3,000 A/W and bandwidth of ~ 400 kHz at a visible wavelength of 515.6 nm, ultimately resulting in a gain bandwidth product exceeding 1 GHz. Due to exceptionally low dark currents, Bi2O2Se APDs also yield high detectivities up to 4.6 × 1014 Jones. A systematic analysis of the photocurrent temperature and bias dependence reveals that the carrier multiplication process in Bi2O2Se APDs is consistent with a reverse biased Schottky diode model with a barrier height of ~ 44 meV, in contrast to the charge trapping extrinsic gain mechanism that dominates most layered semiconductor phototransistors. In this manner, layered Bi2O2Se APDs provide a unique platform that can be exploited in a diverse range of high-performance photodetector applications.

Keywords

layered semiconductorphotodetectorhigh-frequencySchottky diodeimpact ionization

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Nano Research
Volume 14 Issue 6,
June 2021
Pages 1961-1966
DOI: 10.1007/s12274-020-3059-3
Cite this article:
Sangwan VK, Kang J, Lam D, et al. Intrinsic carrier multiplication in layered Bi2O2Se avalanche photodiodes with gain bandwidth product exceeding 1 GHz. Nano Research, 2021, 14(6): 1961-1966. https://doi.org/10.1007/s12274-020-3059-3
Topics:
Bismuth compoundsLayered semiconductorsLight absoptionSelenium compoundsSemiconducting bismuth compounds Semiconducting selenium compounds
Part of a topical collection:
NR45 Awards in 2D Materials, 2021

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Received: 24 June 2020
Revised: 26 July 2020
Accepted: 14 August 2020
Published: 15 September 2020
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature
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