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Research Article

Intrinsic carrier multiplication in layered Bi2O2Se avalanche photodiodes with gain bandwidth product exceeding 1 GHz

Vinod K. Sangwan1, Joohoon Kang1,†, David Lam1, J. Tyler Gish1, Spencer A. Wells1, Jan Luxa2, James P. Male1, G. Jeffrey Snyder1, Zdeněk Sofer2, Mark C. Hersam1,3,4()
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technicka 5, 166 28 Prague 6, Czech Republic
Department of Chemistry, Northwestern University, Evanston, IL 60208, USA
Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208, USA

† Present address: School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea

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Abstract

Emerging layered semiconductors present multiple advantages for optoelectronic technologies including high carrier mobilities, strong light-matter interactions, and tunable optical absorption and emission. Here, metal-semiconductor-metal avalanche photodiodes (APDs) are fabricated from Bi2O2Se crystals, which consist of electrostatically bound [Bi2O2]2+ and [Se]2- layers. The resulting APDs possess an intrinsic carrier multiplication factor up to 400 at 7 K with a responsivity gain exceeding 3,000 A/W and bandwidth of ~ 400 kHz at a visible wavelength of 515.6 nm, ultimately resulting in a gain bandwidth product exceeding 1 GHz. Due to exceptionally low dark currents, Bi2O2Se APDs also yield high detectivities up to 4.6 × 1014 Jones. A systematic analysis of the photocurrent temperature and bias dependence reveals that the carrier multiplication process in Bi2O2Se APDs is consistent with a reverse biased Schottky diode model with a barrier height of ~ 44 meV, in contrast to the charge trapping extrinsic gain mechanism that dominates most layered semiconductor phototransistors. In this manner, layered Bi2O2Se APDs provide a unique platform that can be exploited in a diverse range of high-performance photodetector applications.

Keywords

layered semiconductorphotodetectorhigh-frequencySchottky diodeimpact ionization

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References

[1]
F. H. L. Koppens,; T. Mueller,; P. Avouris,; A. C. Ferrari,; M. S. Vitiello,; M. Polini, Photodetectors based on graphene, other two- dimensional materials and hybrid systems. Nat. Nanotechnol. 2014, 9, 780-793.
Crossref Google Scholar
[2]
V. K. Sangwan,; M. C. Hersam, Electronic transport in two- dimensional materials. Annu. Rev. Phys. Chem. 2018, 69, 299-325.
Crossref Google Scholar
[3]
G. Konstantatos,; E. H. Sargent, Nanostructured materials for photon detection. Nat. Nanotechnol. 2010, 5, 391-400.
Crossref Google Scholar
[4]
Z. H. Sun,; H. X. Chang, Graphene and graphene-like two-dimensional materials in photodetection: Mechanisms and methodology. ACS Nano 2014, 8, 4133-4156.
Crossref Google Scholar
[5]
M. E. Beck,; M. C. Hersam, Emerging opportunities for electrostatic control in atomically thin devices. ACS Nano 2020, 14, 6498-6518.
Crossref Google Scholar
[6]
S. Padgaonkar,; J. N. Olding,; L. J. Lauhon,; M. C. Hersam,; E. A. Weiss, Emergent optoelectronic properties of mixed-dimensional heterojunctions. Acc. Chem. Res. 2020, 53, 763-772.
Crossref Google Scholar
[7]
V. K. Sangwan,; M. C. Hersam, Neuromorphic nanoelectronic materials. Nat. Nanotechnol. 2020, 15, 517-528.
Crossref Google Scholar
[8]
D. Jariwala,; V. K. Sangwan,; L. J. Lauhon,; T. J. Marks,; M. C. Hersam, Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides. ACS Nano 2014, 8, 1102-1120.
Crossref Google Scholar
[9]
M. M. Furchi,; D. K. Polyushkin,; A. Pospischil,; T. Mueller, Mechanisms of photoconductivity in atomically thin MoS2. Nano Lett. 2014, 14, 6165-6170.
Crossref Google Scholar
[10]
S. M. Sze,; K. K. Ng, Physics of Semiconductor Devices; John Wiley & Sons: New York, 2006.
Crossref
[11]
R. H. Bube, Photoelectronic Properties of Semiconductors; Cambridge University Press: Cambridge, 1992.
[12]
H. H. Fang,; W. D. Hu, Photogating in low dimensional photodetectors. Adv. Sci. 2017, 4, 1700323.
Google Scholar
[13]
J. Kang,; S. A. Wells,; V. K. Sangwan,; D. Lam,; X. L. Liu,; J. Luxa,; Z. Sofer,; M. C. Hersam, Solution-based processing of optoelectronically active indium selenide. Adv. Mater. 2018, 30, 1802990.
Google Scholar
[14]
W. J. Zhang,; C. P. Chuu,; J. K. Huang,; C. H. Chen,; M. L. Tsai,; Y. H. Chang,; C. T. Liang,; Y. Z. Chen,; Y. L. Chueh,; J. H. He, et al. Ultrahigh-gain photodetectors based on atomically thin graphene- MoS2 heterostructures. Sci. Rep. 2014, 4, 3826.
Google Scholar
[15]
D. Kufer,; G. Konstantatos, Highly sensitive, encapsulated MoS2 photodetector with gate controllable gain and speed. Nano Lett. 2015, 15, 7307-7313.
Google Scholar
[16]
W. Choi,; M. Y. Cho,; A. Konar,; J. H. Lee,; G. B. Cha,; S. C. Hong,; S. Kim,; J. Kim,; D. Jena,; J. Joo, et al. High-detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared. Adv. Mater. 2012, 24, 5832-5836.
Google Scholar
[17]
J. Kang,; V. K. Sangwan,; H. S. Lee,; X. L. Liu,; M. C. Hersam, Solution-processed layered gallium telluride thin-film photodetectors. ACS Photonics 2018, 5, 3996-4002.
Google Scholar
[18]
C. C. Wu,; D. Jariwala,; V. K. Sangwan,; T. J. Marks,; M. C. Hersam,; L. J. Lauhon, Elucidating the photoresponse of ultrathin MoS2 field-effect transistors by scanning photocurrent microscopy. J. Phys. Chem. Lett. 2013, 4, 2508-2513.
Google Scholar
[19]
G. Konstantatos,; M. Badioli,; L. Gaudreau,; J. Osmond,; M. Bernechea,; F. P. G. de Arquer,; F. Gatti,; F. H. L. Koppens, Hybrid graphene-quantum dot phototransistors with ultrahigh gain. Nat. Nanotechnol. 2012, 7, 363-368.
Google Scholar
[20]
N. Duan,; T. Y. Liow,; A. E. J. Lim,; L. Ding,; G. Q. Lo, 310 GHz gain-bandwidth product Ge/Si avalanche photodetector for 1550 nm light detection. Opt. Exp. 2012, 20, 11031-11036.
Google Scholar
[21]
A. C. Farrell,; X. Meng,; D. K. Ren,; H. Kim,; P. Senanayake,; N. Y. Hsieh,; Z. X. Rong,; T. Y. Chang,; K. M. Azizur-Rahman,; D. L. Huffaker, InGaAs-GaAs nanowire avalanche photodiodes toward single- photon detection in free-running mode. Nano Lett. 2019, 19, 582-590.
Google Scholar
[22]
S. D. Lei,; F. F. Wen,; L. H. Ge,; S. Najmaei,; A. George,; Y. J. Gong,; W. L. Gao,; Z. H. Jin,; B. Li,; J. Lou, et al. An atomically layered InSe avalanche photodetector. Nano Lett. 2015, 15, 3048-3055.
Google Scholar
[23]
G. Dastgeer,; M. F. Khan,; G. Nazir,; A. M. Afzal,; S. Aftab,; B. A. Naqvi,; J. Cha,; K. A. Min,; Y. Jamil,; J. Jung, et al. Temperature-dependent and gate-tunable rectification in a black phosphorus/WS2 van der Waals heterojunction diode. ACS Appl. Mater. Interfaces 2018, 10, 13150-13157.
Google Scholar
[24]
A. Y. Gao,; J. W. Lai,; Y. J. Wang,; Z. Zhu,; J. W. Zeng,; G. L. Yu,; N. Z. Wang,; W. C. Chen,; T. J. Cao,; W. D. Hu, et al. Observation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures. Nat. Nanotechnol. 2019, 14, 217-222.
Google Scholar
[25]
F. Ahmed,; Y. D. Kim,; Z. Yang,; P. He,; E. Hwang,; H. Yang,; J. Hone,; W. J. Yoo, Impact ionization by hot carriers in a black phosphorus field effect transistor. Nat. Commun. 2018, 9, 3414.
Google Scholar
[26]
J. Pak,; Y. Jang,; J. Byun,; K. Cho,; T. Y. Kim,; J. K. Kim,; B. Y. Choi,; J. Shin,; Y. Hong,; S. Chung, et al. Two-dimensional thickness- dependent avalanche breakdown phenomena in MoS2 field-effect transistors under high electric fields. ACS Nano 2018, 12, 7109-7116.
Google Scholar
[27]
J. X. Wu,; C. W. Tan,; Z. J. Tan,; Y. J. Liu,; J. B. Yin,; W. H. Dang,; M. Z. Wang,; H. L. Peng, Controlled synthesis of high-mobility atomically thin bismuth oxyselenide crystals. Nano Lett. 2017, 17, 3021-3026.
Google Scholar
[28]
J. X. Wu,; H. T. Yuan,; M. M. Meng,; C. Chen,; Y. Sun,; Z. Y. Chen,; W. H. Dang,; C. W. Tan,; Y. J. Liu,; J. B. Yin, et al. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se. Nat. Nanotechnol. 2017, 12, 530-534.
Google Scholar
[29]
S. D. N. Luu,; P. Vaqueiro, Layered oxychalcogenides: Structural chemistry and thermoelectric properties. J. Mater. 2016, 2, 131-140.
Google Scholar
[30]
J. K. Harada,; N. Charles,; K. R. Poeppelmeier,; J. M. Rondinelli, Heteroanionic materials by design: Progress toward targeted properties. Adv. Mater. 2019, 31, 1805295.
Google Scholar
[31]
C. Chen,; M. X. Wang,; J. X. Wu,; H. X. Fu,; H. F. Yang,; Z. Tian,; T. Tu,; H. Peng,; Y. Sun,; X. Xu, et al. Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2Se. Sci. Adv. 2018, 4, eaat8355.
Google Scholar
[32]
H. X. Fu,; J. X. Wu,; H. L. Peng,; B. H. Yan, Self-modulation doping effect in the high-mobility layered semiconductor Bi2O2Se. Phys. Rev. B 2018, 97, 241203.
Google Scholar
[33]
Q. D. Fu,; C. Zhu,; X. X. Zhao,; X. L. Wang,; A. Chaturvedi,; C. Zhu,; X. W. Wang,; Q. S. Zeng,; J. D. Zhou,; F. C. Liu, et al. Ultrasensitive 2D Bi2O2Se phototransistors on silicon substrates. Adv. Mater. 2019, 31, 1804945.
Google Scholar
[34]
J. Li,; Z. X. Wang,; Y. Wen,; J. W. Chu,; L. Yin,; R. Q. Cheng,; L. Lei,; P. He,; C. Jiang,; L. P. Feng, et al. High-performance near-infrared photodetector based on ultrathin Bi2O2Se nanosheets. Adv. Funct. Mater. 2018, 28, 1706437.
Google Scholar
[35]
K. G. McKay, Avalanche breakdown in silicon. Phys. Rev. 1954, 94, 877-884.
Google Scholar
[36]
S. L. Miller, Avalanche breakdown in germanium. Phys. Rev. 1955, 99, 1234-1241.
Google Scholar
[37]
S. L. Miller, Ionization rates for holes and electrons in silicon. Phys. Rev. 1957, 105, 1246-1249.
Google Scholar
[38]
P. A. Wolff, Theory of electron multiplication in silicon and germanium. Phys. Rev. 1954, 95, 1415-1420.
Google Scholar
[39]
M. Sparks,; D. L. Mills,; R. Warren,; T. Holstein,; A. A. Maradudin,; L. J. Sham,; E., Loh, Jr; D. F. King, Theory of electron-avalanche breakdown in solids. Phys. Rev. B 1981, 24, 3519-3536.
Google Scholar
[40]
J. H. Werner,; S. Kolodinski,; H. J. Queisser, Novel optimization principles and efficiency limits for semiconductor solar cells. Phys. Rev. Lett. 1994, 72, 3851-3854.
Google Scholar
[41]
S. A. Wells,; A. Henning,; J. T. Gish,; V. K. Sangwan,; L. J. Lauhon,; M. C. Hersam, Suppressing ambient degradation of exfoliated InSe nanosheet devices via seeded atomic layer deposition encapsulation. Nano Lett. 2018, 18, 7876-7882.
Google Scholar
[42]
M. A. Lampert, Simplified theory of space-charge-limited currents in an insulator with traps. Phys. Rev. 1956, 103, 1648-1656.
Google Scholar
[43]
A. Rose, Space-charge-limited currents in solids. Phys. Rev. 1955, 97, 1538-1544.
Google Scholar
[44]
S. Ghatak,; A. Ghosh, Observation of trap-assisted space charge limited conductivity in short channel MoS2 transistor. Appl. Phys. Lett. 2013, 103, 122103.
Google Scholar
[45]
V. Kumar,; S. C. Jain,; A. K. Kapoor,; J. Poortmans,; R. Mertens, Trap density in conducting organic semiconductors determined from temperature dependence of J-V characteristics. J. Appl. Phys. 2003, 94, 1283-1285.
Google Scholar
[46]
D. Joung,; A. Chunder,; L. Zhai,; S. I. Khondaker, Space charge limited conduction with exponential trap distribution in reduced graphene oxide sheets. Appl. Phys. Lett. 2010, 97, 093105.
Google Scholar
[47]
A. Zevalkink,; D. M. Smiadak,; J. L. Blackburn,; A. J. Ferguson,; M. L. Chabinyc,; O. Delaire,; J. Wang,; K. Kovnir,; J. Martin,; L. T. Schelhas, et al. A practical field guide to thermoelectrics: Fundamentals, synthesis, and characterization. Appl. Phys. Rev. 2018, 5, 021303.
Google Scholar
[48]
H. Wang,; Y. Z. Pei,; A. D. LaLonde,; G. J. Snyder, Weak electron- phonon coupling contributing to high thermoelectric performance in n-type PbSe. Proc. Natl. Acad. Sci. USA 2012, 109, 9705-9709.
Google Scholar
[49]
J. B. Yu,; Q. Sun, Bi2O2Se nanosheet: An excellent high-temperature n-type thermoelectric material. Appl. Phys. Lett. 2018, 112, 053901.
Google Scholar
[50]
K. A. Borup,; E. S. Toberer,; L. D. Zoltan,; G. Nakatsukasa,; M. Errico,; J. P. Fleurial,; B. B. Iversen,; G. J. Snyder, Measurement of the electrical resistivity and Hall coefficient at high temperatures. Rev. Sci. Instrum. 2012, 83, 123902.
Google Scholar
[51]
C. Drasar,; P. Ruleova,; L. Benes,; P. Lostak, Preparation and transport properties of Bi2O2Se single crystals. J. Electron. Mater. 2012, 41, 2317-2321.
Google Scholar
[52]
X. Tan,; Y. C. Liu,; K. R. Hu,; G. K. Ren,; Y. M. Li,; R. Liu,; Y. H. Lin,; J. L. Lan,; C. W. Nan, Synergistically optimizing electrical and thermal transport properties of Bi2O2Se ceramics by Te-substitution. J. Am. Ceram. Soc. 2018, 101, 326-333.
Google Scholar
[53]
C. M. Zhong,; V. K. Sangwan,; J. Kang,; J. Luxa,; Z. Sofer,; M. C. Hersam,; E. A. Weiss, Hot carrier and surface recombination dynamics in layered InSe crystals. J. Phys. Chem. Lett. 2019, 10, 493-499.
Google Scholar
Nano Research
Volume 14 Issue 6,
June 2021
Pages 1961-1966
DOI: 10.1007/s12274-020-3059-3
Cite this article:
Sangwan VK, Kang J, Lam D, et al. Intrinsic carrier multiplication in layered Bi2O2Se avalanche photodiodes with gain bandwidth product exceeding 1 GHz. Nano Research, 2021, 14(6): 1961-1966. https://doi.org/10.1007/s12274-020-3059-3
Topics:
Bismuth compoundsLayered semiconductorsLight absoptionSelenium compoundsSemiconducting bismuth compounds Semiconducting selenium compounds
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