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Research Article

A novel approach towards molecular memory device in gate tunable structure of MoS2-graphene

Rahul Tripathi, Abha Misra( )
Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore, Karnataka 560012, India
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Abstract

Molecular interaction in two-dimensional (2D) van der Waals (vdW) interfaces has drawn tremendous attention for extraordinary materials characteristics. So far sensing characteristics of molecular interaction has been exploited extensively to reach the detection limit to a few parts-per-billion (ppb) of molecules and far less attention is given to the evolution of persistent current state due to the molecular exposure. Our study focuses on molecular memory operation of MoS2-graphene heterostructure based field effect transistor. Metastable resistance state of the device due to the external perturbation of molecules is tuned to get a nearly relaxation free current state at much lower molecular concentration of 10 ppb to facilitate non-volatile memory features for molecular memory operation. An ultrafast switching operation in milli-second order is achieved at room temperature for the fastest recovery obtained so far in any molecular sensor. The process is co-controlled both by molecular as well as external charge density.

Keywords

MoS2graphenefield effect transistormolecular memorytrap charges

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References

[1]
S. Tiwari,; F. Rana,; H. Hanafi,; A. Hartstein,; E. F. Crabbé,; K. Chan, A silicon nanocrystals based memory. Appl. Phys. Lett. 1996, 68, 1377-1379.
Crossref Google Scholar
[2]
R. S. Potember.;; T. O. Poehler,; D. O. Cowan,; A. N. Bloch, Electrical switching and memory phenomena in semiconducting organic charge-transfer complexes. In The Physics and Chemistry of Low Dimensional Solids. L. Alcácer,, Ed.; Springer: Dordrecht, 1980; pp. 419-428.
Crossref
[3]
C. Li,; W. Fan,; B. Lei,; D. H. Zhang,; S. Han,; T. Tang,; X. L. Liu,; Z. Q. Liu,; S. Asano,; M. Meyyappan, et al. Multilevel memory based on molecular devices. Appl. Phys. Lett. 2004, 84, 1949-1951.
Crossref Google Scholar
[4]
X. F. Duan,; Y. Huang,; C. M. Lieber, Nonvolatile memory and programmable logic from molecule-gated nanowires. Nano Lett. 2002, 2, 487-490.
Crossref Google Scholar
[5]
S. Bertolazzi,; D. Krasnozhon,; A. Kis, Nonvolatile memory cells based on MoS2/graphene heterostructures. ACS Nano 2013, 7, 3246-3252.
Crossref Google Scholar
[6]
C. S. Liu,; X. Yan,; X. F. Song,; S. J. Ding,; D. W. Zhang,; P. Zhou, A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications. Nat. Nanotechnol. 2018, 13, 404-410.
Crossref Google Scholar
[7]
J. Borghetti,; V. Derycke,; S. Lenfant,; P. Chenevier,; A. Filoramo,; M. Goffman,; D. Vuillaume,; J. P. Bourgoin, Optoelectronic switch and memory devices based on polymer-functionalized carbon nanotube transistors. Adv. Mater. 2006, 18, 2535-2540.
Crossref Google Scholar
[8]
A. Star,; Y. Lu,; K. Bradley,; G. Grüner, Nanotube optoelectronic memory devices. Nano Lett. 2004, 4, 1587-1591.
Crossref Google Scholar
[9]
Q. S. Wang,; Y. Wen,; K. M. Cai,; R. Q. Cheng,; L. Yin,; Y. Zhang,; J. Li,; Z. X. Wang,; F. Wang,; F. M. Wang, et al. A. Nonvolatile infrared memory in MoS2/PbS van der Waals heterostructures. Sci. Adv. 2018, 4, eaap7916.
Crossref Google Scholar
[10]
K. Roy,; M. Padmanabhan,; S. Goswami,; T. P. Sai,; G. Ramalingam,; S. Raghavan,; A. Ghosh, Graphene-MoS2 hybrid structures for multifunctional photoresponsive memory devices. Nat. Nanotechnol. 2013, 8, 826-830.
Crossref Google Scholar
[11]
Z. M. Liu,; A. A. Yasseri,; J. S. Lindsey,; D. F. Bocian, Molecular memories that survive silicon device processing and real-world operation. Science 2003, 302, 1543-1545.
Google Scholar
[12]
M. Mas-Torrent,; C. Rovira,; J. Veciana, Surface-confined electroactive molecules for multistate charge storage information. Adv. Mater. 2013, 25, 462-468.
Google Scholar
[13]
Y. D. Zhao,; S. Bertolazzi,; M. S. Maglione,; C. Rovira,; M. Mas-Torrent,; P. Samorì, Molecular approach to electrochemically switchable monolayer MoS2 transistors. Adv. Mater. 2020, 32, 2000740.
Google Scholar
[14]
D. J. Late,; Y. K. Huang,; B. Liu,; J. Acharya,; S. N. Shirodkar,; J. J. Luo,; A. M. Yan,; D. Charles,; U. V. Waghmare,; V. P. Dravid, et al. Sensing behavior of atomically thin-layered MoS2 transistors. ACS Nano 2013, 7, 4879-4891.
Google Scholar
[15]
B. L. Liu,; L. Chen,; G. Liu,; A. N. Abbas,; M. Fathi,; C. W. Zhou, High-performance chemical sensing using Schottky-contacted chemical vapor deposition grown monolayer MoS2 transistors. ACS Nano 2014, 8, 5304-5314.
Google Scholar
[16]
H. Li,; Z. Y. Yin,; Q. Y. He,; H. Li,; X. Huang,; G. Lu,; D. W. H. Fam,; A. I. Y. Tok,; Q. Zhang,; H. Zhang, Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature. Small 2012, 8, 63-67.
Google Scholar
[17]
B. Cho,; J. Yoon,; S. K. Lim,; A. R. Kim,; D. H. Kim,; S. G. Park,; J. D. Kwon,; Y. J. Lee,; K. H. Lee,; B. H. Lee, et al. Chemical sensing of 2D graphene/MoS2 heterostructure device. ACS Appl. Mater. Interfaces 2015, 7, 16775-16780.
Google Scholar
[18]
R. Kumar,; N. Goel,; M. Kumar, UV-activated MoS2 based fast and reversible NO2 sensor at room temperature. ACS Sens. 2017, 2, 1744-1752.
Google Scholar
[19]
H. Long,; A. Harley-Trochimczyk,; T. Pham,; Z. R. Tang,; T. L. Shi,; A. Zettl,; C. Carraro,; M. A. Worsley,; R. Maboudian, High surface area MoS2/graphene hybrid aerogel for ultrasensitive NO2 detection. Adv. Funct. Mater. 2016, 26, 5158-5165.
Google Scholar
[20]
H. Long,; L. Chan,; A. Harley-Trochimczyk,; L. E. Luna,; Z. R. Tang,; T. L. Shi,; A. Zettl,; C. Carraro,; M. A. Worsley,; R. Maboudian, 3D MoS2 aerogel for ultrasensitive NO2 detection and its tunable sensing behavior. Adv. Mater. Interfaces 2017, 4, 1700217.
Google Scholar
[21]
S. Y. Cho,; S. J. Kim,; Y. Lee,; J. S. Kim,; W. B. Jung,; H. W. Yoo,; J. Kim,; H. T. Jung, Highly enhanced gas adsorption properties in vertically aligned MoS2 layers. ACS Nano 2015, 9, 9314-9321.
Google Scholar
[22]
B. Cho,; M. G. Hahm,; M. Choi,, J. Yoon,; A. R. Kim,; Y. J. Lee,; S. G. Park,; J. D. Kwon,; C. S. Kim,; M. Song, et al. Charge-transfer-based gas sensing using atomic-layer MoS2. Sci. Rep. 2015, 5, 8052.
Google Scholar
[23]
R. T. Lv,; G. G. Chen,; Q. Li,; A. McCreary,; A. Botello-Méndez,; S. V. Morozov,; L. B. Liang,; X. Declerck,; N. Perea-López,; D. A. Cullen, et al. Ultrasensitive gas detection of large-area boron-doped graphene. Proc. Natl. Acad. Sci. USA 2015, 112, 14527-14532.
Google Scholar
[24]
G. H. Lu,; S. Park,; K. H. Yu,; R. S. Ruoff,; L. E. Ocola,; D. Rosenmann,; J. H. Chen, Toward practical gas sensing with highly reduced graphene oxide: A new signal processing method to circumvent run-to-run and device-to-device variations. ACS Nano 2011, 5, 1154-1164.
Google Scholar
[25]
G. Yang,; C. Lee,; J. Kim,; F. Ren,; S. J. Pearton, Flexible graphene-based chemical sensors on paper substrates. Phys. Chem. Chem. Phys. 2013, 15, 1798-1801.
Google Scholar
[26]
J. D. Fowler,; M. J. Allen,; V. C. Tung,; Y. Yang,; R. B. Kaner,; B. H. Weiller, Practical chemical sensors from chemically derived graphene. ACS Nano 2009, 3, 301-306.
Google Scholar
[27]
F. Yavari,; E. Castillo,; H. Gullapalli,; P. M. Ajayan,; N. Koratkar, High sensitivity detection of NO2 and NH3 in air using chemical vapor deposition grown graphene. Appl. Phys. Lett. 2012, 100, 203120.
Google Scholar
[28]
F. K. Perkins,; A. L. Friedman,; E. Cobas,; P. M. Campbell,; G. G. Jernigan,; B. T. Jonker, Chemical vapor sensing with monolayer MoS2. Nano Lett. 2013, 13, 668-673.
Google Scholar
[29]
B. Cho,; A. R. Kim,; Y. Park,; J. Yoon,; Y. J. Lee,; S. Lee,; T. J. Yoo,; C. G. Kang,; B. H. Lee,; H. C. Ko, et al. Bifunctional sensing characteristics of chemical vapor deposition synthesized atomic-layered MoS2. ACS Appl. Mater. Interfaces 2015, 7, 2952-2959.
Google Scholar
[30]
J. S. Kim,; H. W. Yoo,; H. O. Choi,; H. T. Jung, Tunable volatile organic compounds sensor by using thiolated ligand conjugation on MoS2. Nano Lett. 2014, 14, 5941-5947.
Google Scholar
[31]
Q. Yue,; Z. Z. Shao,; S. L. Chang,; J. B. Li, Adsorption of gas molecules on monolayer MoS2 and effect of applied electric field. Nanoscale Res. Lett. 2013, 8, 425.
Google Scholar
[32]
Z. M. Ao,; S. Li,; Q. Jiang, Correlation of the applied electrical field and CO adsorption/desorption behavior on Al-doped graphene. Solid State Commun. 2010, 150, 680-683.
Google Scholar
[33]
X. F. Zhu,; L. Wang,; L. F. Chen, Adsorption and dissociation of O2 on MoSe2 and MoTe2 monolayers: Ab initio study. Int. J. Mod. Phys. B 2014, 28, 1450195.
Google Scholar
[34]
J. Sun,; M. Muruganathan,; H. Mizuta, Room temperature detection of individual molecular physisorption using suspended bilayer graphene. Sci. Adv. 2016, 2, e1501518.
Google Scholar
[35]
M. S. Fuhrer,; J. Hone, Measurement of mobility in dual-gated MoS2 transistors. Nat. Nanotechnol. 2013, 8, 146-147.
Google Scholar
[36]
B. Radisavljevic,; A. Kis, Mobility engineering and a metal-insulator transition in monolayer MoS2. Nat. Mater. 2013, 12, 815-820.
Google Scholar
[37]
J. Lee,; S. Pak,; Y. W. Lee,; Y. Cho,; J. Hong,; P. Giraud,; H. S. Shin,; S. M. Morris,; J. I. Sohn,; S. N. Cha, et al. Monolayer optical memory cells based on artificial trap-mediated charge storage and release. Nat. Commun. 2017, 8, 14734.
Google Scholar
[38]
S. D. Lei,; F. F. Wen,; B. Li,; Q. Z. Wang,; Y. H. Huang,; Y. J. Gong,; Y. M. He,; P. Dong,; J. Bellah,; A. George, et al. Optoelectronic memory using two-dimensional materials. Nano Lett. 2014, 15, 259-265.
Google Scholar
[39]
D. Li,; M. Y. Chen,; Z. Z. Sun,; P. Yu,; Z. Liu,; P. M. Ajayan,; Z. X. Zhang, Two-dimensional non-volatile programmable p-n junctions. Nat. Nanotechnol. 2017, 12, 901-906.
Google Scholar
[40]
Z. Y. Fan,; J. G. Lu, Gate-refreshable nanowire chemical sensors. Appl. Phys. Lett. 2005, 86, 123510.
Google Scholar
[41]
Y. W. Chang,; J. S. Oh,; S. H. Yoo,; H. H. Choi,; K. H. Yoo, Electrically refreshable carbon-nanotube-based gas sensors. Nanotechnology 2007, 18, 435504.
Google Scholar
[42]
H. Geistlinger, Electron theory of thin-film gas sensors. Sens. Actuators B: Chem. 1993, 17, 47-60.
Google Scholar
[43]
H. Tabata,; Y. Sato,; K. Oi,; O. Kubo,; M. Katayama, Bias-and gate-tunable gas sensor response originating from modulation in the Schottky barrier height of a graphene/MoS2 van der Waals heterojunction. ACS Appl. Mater. Interfaces 2018, 10, 38387-38393.
Google Scholar
[44]
V. E. Henrich,; P. A. Cox, The Surface Science of Metal Oxides; Cambridge University Press: New York, 1994.
[45]
Y. Zhang,; A. Kolmakov,; S. Chretien,; H. Metiu,; M. Moskovits, Control of catalytic reactions at the surface of a metal oxide nanowire by manipulating electron density inside it. Nano Lett. 2004, 4, 403-407.
Google Scholar
[46]
F. Schedin,; A. K. Geim,, S. V. Morozov;; E. W. Hill,; P. Blake,; M. I. Katsnelson,; K. S. Novoselov, Detection of individual gas molecules adsorbed on graphene. Nat. Mater. 2007, 6, 652-655.
Google Scholar
[47]
N. Ma,; D. Jena, Carrier statistics and quantum capacitance effects on mobility extraction in two-dimensional crystal semiconductor field-effect transistors. 2D Mater. 2015, 2, 015003.
Google Scholar
[48]
S. J. Zhao,; J. M. Xue,; W. Kang, Gas adsorption on MoS2 monolayer from first-principles calculations. Chem. Phys. Lett. 2014, 595-596, 35-42.
Google Scholar
[49]
A. M. Andringa,; J. R. Meijboom,; E. C. Smits,; S. G. Mathijssen,; P. W. M. Blom,; D. M. De Leeuw, Gate-bias controlled charge trapping as a mechanism for NO2 detection with field-effect transistors. Adv. Funct. Mater. 2011, 21, 100-107.
Google Scholar
[50]
A. M. Andringa,; W. S. Christian Roelofs,; M. Sommer,, M. Thelakkat,; M. Kemerink,; D. M. de Leeuw, Localizing trapped charge carriers in NO2 sensors based on organic field-effect transistors. Appl. Phys. Lett. 2012, 101, 153302.
Google Scholar
Nano Research
Volume 14 Issue 1,
January 2021
Pages 177-184
DOI: 10.1007/s12274-020-3063-7
Cite this article:
Tripathi R, Misra A. A novel approach towards molecular memory device in gate tunable structure of MoS2-graphene. Nano Research, 2021, 14(1): 177-184. https://doi.org/10.1007/s12274-020-3063-7
Topics:
Field effect transistorsGrapheneGraphene transistorsLayered semiconductorsMolybdenum compoundsVan der Waals forces

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Received: 10 June 2020
Revised: 03 August 2020
Accepted: 20 August 2020
Published: 05 January 2021
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature
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