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Research Article

The effect of the dopant’s reactivity for high-performance 2D MoS2 thin-film transistor

Hanleem Lee1,§, Sora Bak1,2,§, Joosung Kim1,3, Hyoyoung Lee1,2,3,4( )
Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
Department of Biophysics, Sungkyunkwan University, Suwon 16419, Republic of Korea

§ Hanleem Lee and Sora Bak contributed equally to this work.

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Abstract

There are many studies on the solution-processed thin-film transistor (TFT) using transition metal dichalcogenide (TMD) materials. However, it is hard to control the electrical property of chemically exfoliated TMD materials compared to the chemical vapor deposition TMD. An investigation into the electrical modulation behavior of exfoliated two-dimensional (2D) material is important to fabricate well-modulated electronic devices via solution processing. Here, we report the effects of reactivity of organic dopants on MoS2 and investigate how the chemical doping behavior influences the electrical properties of MoS2. The band state of dopants, which is related to the electron-withdrawing and donating behavior of chemical dopant, provides a proportional shift in the threshold voltages (Vth) of their field-effect transistors (FETs). However, on/off current ratio (Ion/Ioff) and mobility (µ) are strongly influenced by the defect density depending on the reactivity of doping reaction, rather than the band state of organic dopants. Through the in-depth study on the doping reaction, we fabricate a FET and a TFT, having high mobility and a relatively high on/off ratio (104) using a solution process.

Keywords

2D materialsfunctionalizationthin-film transistordopingdefect

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Nano Research
Volume 14 Issue 1,
January 2021
Pages 198-204
DOI: 10.1007/s12274-020-3068-2
Cite this article:
Lee H, Bak S, Kim J, et al. The effect of the dopant’s reactivity for high-performance 2D MoS2 thin-film transistor. Nano Research, 2021, 14(1): 198-204. https://doi.org/10.1007/s12274-020-3068-2
Topics:
Chemical vapor depositionField effect transistorsLayered semiconductorsMolybdenum compoundsSemiconductor dopingSulfur compoundsThin film circuitsThin film transistorsThin filmsTransition metals

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Received: 10 July 2020
Revised: 21 August 2020
Accepted: 23 August 2020
Published: 05 January 2021
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature
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