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Review Article

Emerging low-dimensional materials for mid-infrared detection

Jiangbin Wu1( ), Nan Wang2, Xiaodong Yan1, Han Wang1,2( )
Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA 90089, USA
Mork Family Department of Chemical Engineering and Material Science, University of Southern California, Los Angeles, CA 90089, USA
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Graphical Abstract

Abstract

Mid-infrared (IR) detectors based on the emerging low-dimensional (two-dimensional and quasi one-dimensional) materials offer unique characteristics including large bandgap tunability, optical polarization sensitivity and integrability with typical silicon process, which are not available in the mid-IR detectors based on traditional compound semiconductors. Here, we review the recent progress in study of mid-IR detectors based on the low-dimensional materials, including black phosphorus, black arsenic phosphorus, tellurene and BaTiS3, from the perspectives of crystal structure, material synthesis, optical properties, and the detector characteristics. The detector gain and detectivity are benchmarked, and the unique properties, such as the polarization sensitivity, are discussed. We also provide our perspective about key future research directions in this field.

Keywords

mid-infrared detectoranisotropylow-dimensionalgaindetectivity

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Nano Research
Volume 14 Issue 6,
June 2021
Pages 1863-1877
DOI: 10.1007/s12274-020-3128-7
Cite this article:
Wu J, Wang N, Yan X, et al. Emerging low-dimensional materials for mid-infrared detection. Nano Research, 2021, 14(6): 1863-1877. https://doi.org/10.1007/s12274-020-3128-7
Topics:
Crystal structureInfrared devices Phosphorus
Part of a topical collection:
NR45 Awards in 2D Materials, 2021

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Received: 28 June 2020
Revised: 01 September 2020
Accepted: 11 September 2020
Published: 23 October 2020
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature
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