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Research Article

Geometrical quasi-ballistic effects on thermal transport in nanostructured devices

Sami Alajlouni1,2,§( ), Albert Beardo3,§( ), Lluc Sendra3, Amirkoushyar Ziabari4,5, Javier Bafaluy3, Juan Camacho3, Yi Xuan1,2, F. Xavier Alvarez3, Ali Shakouri1,2
Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA
Department of electrical and computer engineering, Purdue University, West Lafayette, Indiana 47907, USA
Department of physics, Universitat Autònoma de Barcelona, Bellaterra 08193, Catalonia, Spain
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
R&D Staff Scientist, Imaging, Signals and Machine Learning, Tennessee 37831, USA

§ Sami Alajlouni and Albert Beardo contributed equally to this work.

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Abstract

We employ thermoreflectance thermal imaging to directly measure the steady-state two-dimensional (2D) temperature field generated by nanostructured heat sources deposited on silicon substrate with different geometrical configurations and characteristic sizes down to 400nm. The analysis of the results using Fourier’s law not only breaks down as size scales down, but it also fails to capture the impact of the geometry of the heat source. The substrate effective Fourier thermal conductivities fitted to wire-shaped and circular-shaped structures with identical characteristic lengths are found to display up to 40% mismatch. Remarkably, a hydrodynamic heat transport model reproduces the observed temperature fields for all device sizes and shapes using just intrinsic Si parameters, i.e., a geometry and size-independent thermal conductivity and nonlocal length scale. The hydrodynamic model provides insight into the observed thermal response and of the contradictory Fourier predictions. We discuss the substantial Silicon hydrodynamic behavior at room temperature and contrast it to InGaAs, which shows less hydrodynamic effects due to dominant phonon-impurity scattering.

Keywords

phonon hydrodynamicsnanoscale heat transferquasi-ballistic transportsilicon

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Nano Research
Volume 14 Issue 4,
April 2021
Pages 945-952
DOI: 10.1007/s12274-020-3129-6
Cite this article:
Alajlouni S, Beardo A, Sendra L, et al. Geometrical quasi-ballistic effects on thermal transport in nanostructured devices. Nano Research, 2021, 14(4): 945-952. https://doi.org/10.1007/s12274-020-3129-6
Topics:
Fourier transformsGallium compoundsInfrared imagingMOS devicesSemiconducting indium gallium arsenide Semiconductor alloysSubstrates

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Received: 06 July 2020
Revised: 17 September 2020
Accepted: 21 September 2020
Published: 27 November 2020
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature
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