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Research Article

Raman scattering investigation of twisted WS2/MoS2 heterostructures: interlayer mechanical coupling versus charge transfer

Lishu Wu1,§, Chunxiao Cong2,§( ), Jingzhi Shang3( ), Weihuang Yang4, Yu Chen1, Jiadong Zhou5, Wei Ai3, Yanlong Wang6, Shun Feng1, Hongbo Zhang1, Zheng Liu5, Ting Yu1( )
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
School of Information Science and Technology, Fudan University, Shanghai 200433, China
Shaanxi Institute of Flexible Electronics, Northwestern Polytechnical University, Xi’an 710129, China
Engineering Research Center of Smart Microsensors and Microsystems, Ministry of Education, College of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China
School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
Key Laboratory of Chemical Lasers, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China

§ Lishu Wu and Chunxiao Cong contributed equally to this work.

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Abstract

Twisted van der Waals homo- and hetero-structures have aroused great attentions due to their unique physical properties, providing a new platform to explore the novel two-dimensional (2D) condensed matter physics. The robust dependence of phonon vibrations and electronic band structures on the twist angle has been intensively observed in transition metal dichalcogenide (TMD) homo-structures. However, the effects of twist angle on the lattice vibrational properties in the TMD heterostructures have not caused enough attention. Here, we report the distinct evolutions of Raman scattering and the underlying interlayer interactions in the twisted WS2/MoS2 heterostructures. The shifts and linewidths of E2g(Γ) and A1g(Γ) phonon modes are found to be twist angle dependent. In particular, analogous to that of the twisted TMD homostructures, the frequency separations between E2g(Γ) and A1g(Γ) modes of MoS2 and WS2 in the twisted heterostructures varying with twist angle correlate with the interlayer mechanical coupling, essentially originating from the spacing-related repulsion between sulfur atoms. Moreover, the opposite shift behaviors and broadening of A1g(Γ) modes caused by charge transfer are also observed in the twisted heterostructures. The calculated interlayer distances and band alignment of twisted WS2/MoS2 through density functional theory further evidence our interpretations on the roles of the interlayer mechanical coupling and charge transfer in variations of Raman features. Such understanding and controlling of interlayer interaction through the stacking orientation are significant for future optoelectronic device design based on the newly emerged 2D heterostructures.

Keywords

van der Waals heterostructuresinterlayer couplingRaman scatteringtwist anglecharge transfer

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Nano Research
Volume 14 Issue 7,
July 2021
Pages 2215-2223
DOI: 10.1007/s12274-020-3193-y
Cite this article:
Wu L, Cong C, Shang J, et al. Raman scattering investigation of twisted WS2/MoS2 heterostructures: interlayer mechanical coupling versus charge transfer. Nano Research, 2021, 14(7): 2215-2223. https://doi.org/10.1007/s12274-020-3193-y
Topics:
Density functional theoryLayered semiconductorsMolybdenum compoundsOptoelectronic devicesRaman scatteringTransition metalsTungsten compoundsVan der Waals forces

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Received: 19 August 2020
Revised: 09 October 2020
Accepted: 15 October 2020
Published: 05 July 2021
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020
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