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Research Article

Wavelength-selectivity polarization dependence of optical absorption and photoresponse in SnS nanosheets

Yu Cui1,§, Ziqi Zhou1,§, Xinghua Wang2, Xiaoting Wang1, Zhihui Ren1, Longfei Pan1, Juehan Yang1( )
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100083, China
Department of Ophthalmology, Union Hospital, Tongji Medical College, Huazhong University of Science and Technology, Wuhan 430022, China

§ Yu Cui and Ziqi Zhou contributed equally to this work.

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Abstract

The optical and optoelectronic characteristics of SnS nanosheets with strong anisotropic crystal structure are researched. Transmission electron microscopy and polarized Raman spectra are used to determine the crystal orientation of SnS nanosheets. The photodetector based on SnS nanosheets exhibits the carrier mobility of 37.75 cm2/V·s, photoresponsivity of 310.5 A/W and external quantum efficiency of 8.56 × 104 % at 450 nm. Optical absorption around the absorption edge presents obvious polarization sensitivity with the highest optical absorption dichroic ratio of 3.06 at 862 nm. Due to anisotropic optical absorption, the polarized photocurrent appears as the periodic change affected by the polarized direction of the incident light at 808 nm. Overall, SnS nanosheets show good potential in the future application of the polarized photodetectors for specific wavelength.

Keywords

SnSanisotropyoptical characteristicpolarized photoresponse

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Nano Research
Volume 14 Issue 7,
July 2021
Pages 2224-2230
DOI: 10.1007/s12274-020-3197-7
Cite this article:
Cui Y, Zhou Z, Wang X, et al. Wavelength-selectivity polarization dependence of optical absorption and photoresponse in SnS nanosheets. Nano Research, 2021, 14(7): 2224-2230. https://doi.org/10.1007/s12274-020-3197-7
Topics:
Crystal orientationHigh resolution transmission electron microscopyIVLayered semiconductorsLight absoptionNanosheetsPhotocurrents PhotodetectorsPhotonsTin compoundsVI semiconductors

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Received: 16 September 2020
Revised: 17 October 2020
Accepted: 19 October 2020
Published: 05 July 2021
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020
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