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Research Article

High-mobility patternable MoS2 percolating nanofilms

Xiangxiang Gao1, Jun Yin1, Gang Bian1, Hai-Yang Liu1, Chao-Peng Wang1, Xi-Xi Pang1, Jian Zhu1,2()
School of Materials Science and Engineering, National Institute for Advanced Materials, Nankai University, Tianjin 300350, China
Tianjin Key Laboratory of Metal and Molecule-Based Material Chemistry, Tianjin Key Laboratory for Rare Earth Materials and Applications, Nankai University, Tianjin 300350, China
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Abstract

Fabrication of large-area and uniform semiconducting thin films of two-dimensional (2D) materials is paramount for the full exploitation of their atomic thicknesses and smooth surfaces in integrated circuits. In addition to elaborate vapor-based synthesis techniques for the wafer-scale growth of 2D films, solution-based approaches for high-quality thin films from the liquid dispersions of 2D flakes, despite underdeveloped, are alternative cost-effective tactics. Here, we present layer-by-layer (LbL) assembly as an effective approach to obtaining scalable semiconducting films of molybdenum disulfide (MoS2) for field-effect transistors (FETs). LbL assembly is achieved by coordinating electrochemically exfoliated MoS2 with cationic poly (diallyldimethylammonium chloride) (PDDA) through electrostatic interactions. The PDDA/MoS2 percolating nanofilms show controlled and self-limited growth on a variety of substrates, and are easily patterned through lift-off processes. Ion gel gated FETs are fabricated on these MoS2 nanofilms, and they show mobilities of 9.8 cm2·V-1·s-1, on/off ratios of 2.1 × 105 with operating voltages less than 2 V. The annealing temperature in the fabrication process can be as low as 200 °C, thereby permitting the fabrication of flexible FETs on polyethylene terephthalate substrates. The LbL assembly technique holds great promise for the large-scale fabrication of flexible electronics based on solution-processed 2D semiconductors.

Keywords

layer-by-layer assemblymolybdenum disulfidenanofilmssolution-processed electronicsfield-effect transistors

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Nano Research
Volume 14 Issue 7,
July 2021
Pages 2255-2263
DOI: 10.1007/s12274-020-3218-6
Cite this article:
Gao X, Yin J, Bian G, et al. High-mobility patternable MoS2 percolating nanofilms. Nano Research, 2021, 14(7): 2255-2263. https://doi.org/10.1007/s12274-020-3218-6
Topics:
Chlorine compoundsCost effectivenessFabricationField effect transistorsLayered semiconductorsMolybdenum compoundsSemiconducting films Sulfur compoundsThin films
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