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Research Article

Carrier mobility tuning of MoS2 by strain engineering in CVD growth process

Yongfeng Chen1,§, Wenjie Deng1,§, Xiaoqing Chen1( ), Yi Wu1, Jianwei Shi3, Jingying Zheng2, Feihong Chu1, Beiyun Liu1, Boxing An1, Congya You1, Liying Jiao2, Xinfeng Liu3, Yongzhe Zhang1( )
College of Materials Science and Engineering, Key Laboratory of Advanced Functional Materials of Education Ministry of China, Beijing Key Laboratory of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China

§ Yongfeng Chen and Wenjie Deng contributed equally to this work.

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Abstract

Strain engineering is proposed to be an effective technology to tune the properties of two-dimensional (2D) transition metal dichalcogenides (TMDCs). Conventional strain engineering techniques (e.g., mechanical bending, heating) cannot conserve strain due to their dependence on external action, which thereby limits the application in electronics. In addition, the theoretically predicted strain-induced tuning of electrical performance of TMDCs has not been experimentally proved yet. Here, a facile but effective approach is proposed to retain and tune the biaxial tensile strain in monolayer MoS2 by adjusting the process of the chemical vapor deposition (CVD). To prove the feasibility of this method, the strain formation model of CVD grown MoS2 is proposed which is supported by the calculated strain dependence of band gap via the density functional theory (DFT). Next, the electrical properties tuning of strained monolayer MoS2 is demonstrated in experiment, where the carrier mobility of MoS2 was increased by two orders (~ 0.15 to ~ 23 cm2·V-1·s-1). The proposed pathway of strain preservation and regulation will open up the optics application of strain engineering and the fabrication of high performance electronic devices in 2D materials.

Keywords

MoS2CVDcarrier mobilitystrain engineering2D materials

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Nano Research
Volume 14 Issue 7,
July 2021
Pages 2314-2320
DOI: 10.1007/s12274-020-3228-4
Cite this article:
Chen Y, Deng W, Chen X, et al. Carrier mobility tuning of MoS2 by strain engineering in CVD growth process. Nano Research, 2021, 14(7): 2314-2320. https://doi.org/10.1007/s12274-020-3228-4
Topics:
Chemical vapor depositionDensity functional theoryEnergy gapLayered semiconductorsMolybdenum compoundsMonolayersTransition metals

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Received: 07 January 2020
Revised: 30 October 2020
Accepted: 09 November 2020
Published: 05 July 2021
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020
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