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Review Article

Recent progress and challenges on two-dimensional material photodetectors from the perspective of advanced characterization technologies

Fang Zhong1,2,3,§, Hao Wang1,2,§, Zhen Wang1,2( ), Yang Wang1, Ting He1,2, Peisong Wu1,2, Meng Peng1,2, Hailu Wang1, Tengfei Xu1, Fang Wang1, Peng Wang1,2, Jinshui Miao1, Weida Hu1,2( )
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
University of Chinese Academy of Sciences, Beijing 100049, China
School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China

§ Fang Zhong and Hao Wang contributed equally to this work.

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Graphical Abstract

Abstract

Atomically thin two-dimensional (2D) materials exhibit enormous potential in photodetectors because of novel and extraordinary properties, such as passivated surfaces, tunable bandgaps, and high mobility. High-performance photodetectors based on 2D materials have been fabricated for broadband, position, polarization-sensitive detection, and large-area array imaging. However, the current performance of 2D material photodetectors is not outstanding enough, including response speed, detectivity, and so forth. The way to further promote the development of 2D material photodetectors and their corresponding practical applications is still a tremendous challenge. In this article, these issues of 2D material photodetectors are analyzed and expected to be solved by combining micro-nano characterization technologies. The inherent physical properties of 2D materials and photodetectors can be accurately characterized by Raman spectroscopy, transmission electron microscopy (TEM), and scattering scanning near-field optical microscope (s-SNOM). In particular, the precise probe of lattice defects, doping concentration, and near-field light absorption characteristics can promote the researches of low-noise and high-responsivity photodetectors. Scanning photocurrent microscope (SPCM) can show the overall spatial distribution of photocurrent and analyze the mechanism of photocurrent. Photoluminescence (PL) spectroscopy and Kelvin probe force microscope (KPFM) can characterize the material bandgap, work function distribution and interlayer coupling characteristics, making it possible to design high-performance photodetectors through energy band engineering. These advanced characterization techniques cover the entire process from material growth, to device preparation, and to performance analysis, and systematically reveal the development status of 2D material photodetectors. Finally, the prospects and challenges are discussed to promote the application of 2D material photodetectors.

Keywords

characterization technologiesphotodetectorstwo-dimensional materialsatomically thin

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Nano Research
Volume 14 Issue 6,
June 2021
Pages 1840-1862
DOI: 10.1007/s12274-020-3247-1
Cite this article:
Zhong F, Wang H, Wang Z, et al. Recent progress and challenges on two-dimensional material photodetectors from the perspective of advanced characterization technologies. Nano Research, 2021, 14(6): 1840-1862. https://doi.org/10.1007/s12274-020-3247-1
Topics:
Energy gapHigh resolution transmission electron microscopyLight absoptionNear field scanning optical microscopyPhotocurrents Photoluminescence spectroscopyPhotonsProbesScanning electron microscopySemiconductor quantum wells
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NR45 Awards in 2D Materials, 2021

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Received: 04 October 2020
Revised: 10 November 2020
Accepted: 16 November 2020
Published: 08 December 2020
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature
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