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Research Article

Controlling phase transition in WSe2 towards ideal n-type transistor

Yue Zheng1,2, Du Xiang3( ), Jialin Zhang3, Rui Guo3, Wenhui Wang4, Tao Liu3, Leyi Loh5, Yanan Wang2, Jing Gao2, Cheng Han1, Michel Bosman5, Zhenhua Ni4, Wei Chen2,3,6,7( )
SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
Department of Physics, National University of Singapore, Singapore 117551, Singapore
Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
School of Physics and the Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 210096, China
Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, China
National University of Singapore (Suzhou) Research Institute, 377 Lin Quan Street, Suzhou Industrial Park, Suzhou 215123, China
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Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have been rapidly established as promising building blocks for versatile atomic scale circuits and multifunctional devices. However, the high contact resistance in TMDs based transistors seriously hinders their applications in complementary electronics. In this work, we show that an Ohmic homojunction n-type tungsten diselenide (WSe2) transistor is realized through spatially controlling cesium (Cs) doping region near the contacts. We find that the remarkable electron doping effect of Cs stimulates a semiconductor to metal (2H to 1T’) phase transition in WSe2, and hence the formation of 2H-1T’ hetero-phase contact. Our method significantly optimizes the WSe2 transport behavior with a perfect low subthreshold swing of ~ 61 mV/dec and ultrahigh current on/off ratio exceeding ~ 109. Meanwhile, the electron mobility is enhanced by nearly 50 times. We elucidate that the ideal n-type behavior originates from the negligible Schottky barrier height of ~ 19 meV and low contact resistance of ~ 0.9 kΩ·μm in the 2H-1T’ homojunction device. Moreover, based on the Ohmic hetero-phase configuration, a WSe2 inverter is achieved with a high gain of ~ 270 and low power consumption of ~ 28 pW. Our findings envision Cs functionalization as an effective method to realize ideal Ohmic contact in 2D WSe2 transistors towards high performance complementary electronic devices.

Keywords

WSe2Cs intercalationsemiconductor to metal phase transitionideal hetero-phase transistorhigh gain homo-inverter

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Nano Research
Volume 14 Issue 8,
August 2021
Pages 2703-2710
DOI: 10.1007/s12274-020-3275-x
Cite this article:
Zheng Y, Xiang D, Zhang J, et al. Controlling phase transition in WSe2 towards ideal n-type transistor. Nano Research, 2021, 14(8): 2703-2710. https://doi.org/10.1007/s12274-020-3275-x
Topics:
Charge transferSelenium compoundsSemiconductor dopingTransition metals

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Received: 19 October 2020
Revised: 25 November 2020
Accepted: 01 December 2020
Published: 04 January 2021
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020
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