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Research Article

Highly sensitive solar-blind deep ultraviolet photodetector based on graphene/PtSe2/β-Ga2O3 2D/3D Schottky junction with ultrafast speed

Di Wu1, Zhihui Zhao1, Wei Lu2, Lukas Rogée2, Longhui Zeng2( ), Pei Lin1, Zhifeng Shi1, Yongtao Tian1, Xinjian Li1, Yuen Hong Tsang2( )
School of Physics and Microelectronics, and Key Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052, China
Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
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Abstract

There is an emerging need for high-sensitivity solar-blind deep ultraviolet (DUV) photodetectors with an ultra-fast response speed. Although nanoscale devices based on Ga2O3 nanostructures have been developed, their practical applications are greatly limited by their slow response speed as well as low specific detectivity. Here, the successful fabrication of two-/three-dimensional (2D/3D) graphene (Gr)/PtSe2/β-Ga2O3 Schottky junction devices for high-sensitivity solar-blind DUV photodetectors is demonstrated. Benefitting from the high-quality 2D/3D Schottky junction, the vertically stacked structure, and the superior-quality transparent graphene electrode for effective carrier collection, the photodetector is highly sensitive to DUV light illumination and achieves a high responsivity of 76.2 mA/W, a large on/off current ratio of ~ 105, along with an ultra-high ultraviolet (UV)/visible rejection ratio of 1.8 × 104. More importantly, it has an ultra-fast response time of 12 μs and a remarkable specific detectivity of ~ 1013 Jones. Finally, an excellent DUV imaging capability has been identified based on the Gr/PtSe2/β-Ga2O3 Schottky junction photodetector, demonstrating its great potential application in DUV imaging systems.

Keywords

platinum diselenideβ-Ga2O3solar-blindphotodetectorsdeep ultraviolet imaging

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References

[1]
J. Y. Tsao,; S. Chowdhury,; M. A. Hollis,; D. Jena,; N. M. Johnson,; K. A. Jones,; R. J. Kaplar,; S. Rajan,; C. G. Van de Walle,; E. Bellotti, et al. Ultrawide-bandgap semiconductors: Research opportunities and challenges. Adv. Electron. Mater. 2018, 4, 1600501.
Crossref Google Scholar
[2]
L. X. Su,; W. Yang,; J. Cai,; H. Y. Chen,; X. S. Fang, Self-powered ultraviolet photodetectors driven by built-in electric field. Small 2017, 13, 1701687.
Crossref Google Scholar
[3]
H. Y. Chen,; H. Liu,; Z. M. Zhang,; K. Hu,; X. S. Fang, Nanostructured photodetectors: From ultraviolet to terahertz. Adv. Mater. 2016, 28, 403-433.
Crossref Google Scholar
[4]
Y. C. Chen,; Y. J. Lu,; M. Y. Liao,; Y. Z. Tian,; Q. Liu,; C. J. Gao,; X. Yang,; C. X. Shan, 3D solar-blind Ga2O3 photodetector array realized via origami method. Adv. Funct. Mater. 2019, 29, 1906040.
Crossref Google Scholar
[5]
J. X. Chen,; W. X. Ouyang,; W. Yang,; J. H. He,; X. S. Fang, Recent progress of heterojunction ultraviolet photodetectors: Materials, integrations, and applications. Adv. Funct. Mater. 2020, 30, 1909909.
Crossref Google Scholar
[6]
C. N. Lin,; Y. J. Lu,; Y. Z. Tian,; C. J. Gao,; M. M. Fan,; X. Yang,; L. Dong,; C. X. Shan, Diamond based photodetectors for solar-blind communication. Opt. Express 2019, 27, 29962-29971.
Crossref Google Scholar
[7]
W. Y. Kong,; G. A. Wu,; K. Y. Wang,; T. F. Zhang,; Y. F. Zou,; D. D. Wang,; L. B. Luo, Graphene-β-Ga2O3 Heterojunction for highly sensitive deep UV photodetector application. Adv. Mater. 2016, 28, 10725-10731.
Crossref Google Scholar
[8]
M. M. Fan,; K. W. Liu,; X. Chen,; Z. Z. Zhang,; B. H. Li,; D. Z. Shen, A self-powered solar-blind ultraviolet photodetector based on a Ag/ZnMgO/ZnO structure with fast response speed. RSC Adv. 2017, 7, 13092-13096.
Crossref Google Scholar
[9]
K. Jiang,; X. J. Sun,; Z. H. Zhang,; J. W. Ben,; J. M. Che,; Z. M. Shi,; Y. P. Jia,; Y. Chen,; S. L. Zhang,; W. Lv, et al. Polarization-enhanced AlGaN solar-blind ultraviolet detectors. Photonics Res. 2020, 8, 1243-1252.
Crossref Google Scholar
[10]
C. N. Lin,; Y. J. Lu,; X. Yang,; Y. Z. Tian,; C. J. Gao,; J. L. Sun,; L. Dong,; F. Zhong,; W. D. Hu,; C. X. Shan, Diamond-based all-carbon photodetectors for solar-blind imaging. Adv. Opt. Mater. 2018, 6, 1800068.
Crossref Google Scholar
[11]
S. J. Pearton,; J. C. Yang,; P. H. Cary,; F. Ren,; J. Kim,; M. J. Tadjer,; M. A. Mastro, A review of Ga2O3 materials, processing, and devices. Appl. Phys. Rev. 2018, 5, 011301.
Google Scholar
[12]
B. Zhao,; F. Wang,; H. Y. Chen,; L. X. Zheng,; L. X. Su,; D. X. Zhao,; X. S. Fang, An ultrahigh responsivity (9.7 mA W-1) self- powered solar-blind photodetector based on individual ZnO-Ga2O3 heterostructures. Adv. Funct. Mater. 2017, 27, 1700264.
Google Scholar
[13]
B. Zhao,; F. Wang,; H. Y. Chen,; Y. P. Wang,; M. M. Jiang,; X. S. Fang,; D. X. Zhao, Solar-blind avalanche photodetector based on single ZnO-Ga2O3 core-shell microwire. Nano Lett. 2015, 15, 3988-3993.
Google Scholar
[14]
C. Xie,; X. T. Lu,; M. R. Ma,; X. W. Tong,; Z. X. Zhang,; L. Wang,; C. Y. Wu,; W. H. Yang,; L. B. Luo, Catalyst-free vapor-solid deposition growth of β-Ga2O3 nanowires for DUV photodetector and image sensor application. Adv. Opt. Mater. 2019, 7, 1901257.
Google Scholar
[15]
Y. Qin,; S. B. Long,; Q. M. He,; H. Dong,; G. Z. Jian,; Y. Zhang,; X. H. Hou,; P. J. Tan,; Z. F. Zhang,; Y. J. Lu, et al. Amorphous gallium oxide-based gate-tunable high-performance thin film phototransistor for solar-blind imaging. Adv. Electron. Mater. 2019, 5, 1900389.
Google Scholar
[16]
J. G. Yu,; L. P. Dong,; B. Peng,; L. Yuan,; Y. Huang,; L. C. Zhang,; Y. M. Zhang,; R. X. Jia, Self-powered photodetectors based on β-Ga2O3/4H-SiC heterojunction with ultrahigh current on/off ratio and fast response. J. Alloys Compd. 2020, 821, 153532.
Google Scholar
[17]
P. G. Li,; H. Z. Shi,; K. Chen,; D. Y. Guo,; W. Cui,; Y. S. Zhi,; S. L. Wang,; Z. P. Wu,; Z. W. Chen,; W. H. Tang, Construction of GaN/Ga2O3 p-n junction for an extremely high responsivity self-powered UV photodetector. J. Mater. Chem. C 2017, 5, 10562-10570.
Google Scholar
[18]
R. C. Lin,; W. Zheng,; D. Zhang,; Z. J. Zhang,; Q. X. Liao,; L. Yang,; F. Huang, High-performance graphene/β-Ga2O3 heterojunction deep-ultraviolet photodetector with hot-electron excited carrier multiplication. ACS Appl. Mater. Interfaces 2018, 10, 22419-22426.
Google Scholar
[19]
Z. G. Wang,; Q. Li,; F. Besenbacher,; M. D. Dong, Facile synthesis of single crystal PtSe2 nanosheets for nanoscale electronics. Adv. Mater. 2016, 28, 10224-10229.
Google Scholar
[20]
C. Yim,; K. Lee,; N. McEvoy,; M. O'Brien,; S. Riazimehr,; N. C. Berner,; C. P. Cullen,; J. Kotakoski,; J. C. Meyer,; M. C. Lemme, et al. High-performance hybrid electronic devices from layered PtSe2 films grown at low temperature. ACS Nano 2016, 10, 9550-9558.
Google Scholar
[21]
Z. X. Zhang,; L. H. Zeng,; X. W. Tong,; Y. Gao,; C. Xie,; Y. H. Tsang,; L. B. Luo,; Y. C. Wu, Ultrafast, self-driven, and air-stable photodetectors based on multilayer PtSe2/perovskite heterojunctions. J. Phys. Chem. Lett. 2018, 9, 1185-1194.
Google Scholar
[22]
K. N. Zhang,; M. Z. Yan,; H. X. Zhang,; H. Q. Huang,; M. Arita,; Z. Sun,; W. H. Duan,; Y. Wu,; S. Y. Zhou, Experimental evidence for type-II dirac semimetal in PtSe2. Phys. Rev. B 2017, 96, 125102.
Google Scholar
[23]
L. H. Zeng,; S. H. Lin,; Z. H. Lou,; H. Y. Yuan,; H. Long,; Y. Y. Li,; W. Lu,; S. P. Lau,; D. Wu,; Y. H. Tsang, Ultrafast and sensitive photodetector based on a PtSe2/silicon nanowire array heterojunction with a multiband spectral response from 200 to 1550 nm. NPG Asia Mater. 2018, 10, 352-362.
Google Scholar
[24]
R. R. Zhuo,; L. H. Zeng,; H. Y. Yuan,; D. Wu,; Y. G. Wang,; Z. F. Shi,; T. T. Xu,; Y. T. Tian,; X. J. Li,; Y. H. Tsang, In-situ fabrication of PtSe2/GaN heterojunction for self-powered deep ultraviolet photodetector with ultrahigh current on/off ratio and detectivity. Nano Res. 2019, 12, 183-189.
Google Scholar
[25]
D. Wu,; Y. G. Wang,; L. H. Zeng,; C. Jia,; E. P. Wu,; T. T. Xu,; Z. F. Shi,; Y. T. Tian,; X. J. Li,; Y. H. Tsang, Design of 2D layered PtSe2 heterojunction for the high-performance, room-temperature, broadband, infrared photodetector. ACS Photonics 2018, 5, 3820-3827.
Google Scholar
[26]
L. H. Zeng,; S. H. Lin,; Z. J. Li,; Z. X. Zhang,; T. F. Zhang,; C. Xie,; C. H. Mak,; Y. Chai,; S. P. Lau,; L. B. Luo, et al. Fast, self-driven, air-stable, and broadband photodetector based on vertically aligned PtSe2/GaAs heterojunction. Adv. Funct. Mater. 2018, 28, 1705970.
Google Scholar
[27]
H. Xu,; C. Guo,; J. Z. Zhang,; W. L. Guo,; C. N. Kuo,; C. S. Lue,; W. D. Hu,; L. Wang,; G. Chen,; A. Politano, et al. PtTe2-based type-II dirac semimetal and its van der waals heterostructure for sensitive room temperature terahertz photodetection. Small 2019, 15, 1903362.
Google Scholar
[28]
Z. J. Lu,; Y. Xu,; Y. Q. Yu,; K. W. Xu,; J. Mao,; G. B. Xu,; Y. M. Ma,; D. Wu,; J. S. Jie, Ultrahigh speed and broadband few-layer MoTe2/Si 2D-3D heterojunction-based photodiodes fabricated by pulsed laser deposition. Adv. Funct. Mater. 2020, 30, 1907951.
Google Scholar
[29]
R. R. Zhuo,; D. Wu,; Y. G. Wang,; E. P. Wu,; C. Jia,; Z. F. Shi,; T. T. Xu,; Y. T. Tian,; X. J. Li, A self-powered solar-blind photodetector based on a MoS2/β-Ga2O3 heterojunction. J. Mater. Chem. C 2018, 6, 10982-10986.
Google Scholar
[30]
D. Y. Guo,; H. Liu,; P. G. Li,; Z. P. Wu,; S. L. Wang,; C. Cui,; C. R. Li,; W. H. Tang, Zero-power-consumption solar-blind photodetector based on β-Ga2O3/NSTO heterojunction. ACS Appl. Mater. Interfaces 2017, 9, 1619-1628.
Google Scholar
[31]
Z. P. Wu,; L. Jiao,; X. L. Wang,; D. Y. Guo,; W. H. Li,; L. H. Li,; F. Huang,; W. H. Tang, A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga: ZnO heterojunction. J. Mater. Chem. C 2017, 5, 8688-8693.
Google Scholar
[32]
H. Liu,; J. H. Meng,; X. W. Zhang,; Y. N. Chen,; Z. G. Yin,; D. G. Wang,; Y. Wang,; J. B. You,; M. L. Gao,; P. Jin, High-performance deep ultraviolet photodetectors based on few-layer hexagonal boron nitride. Nanoscale 2018, 10, 5559-5565.
Google Scholar
[33]
D. Wu,; J. W. Guo,; J. Du,; C. X. Xia,; L. H. Zeng,; Y. Z. Tian,; Z. F. Shi,; Y. T. Tian,; X. J. Li,; Y. H. Tsang, et al. Highly polarization- sensitive, broadband, self-powered photodetector based on graphene/PdSe2/germanium heterojunction. ACS Nano 2019, 13, 9907-9917.
Google Scholar
[34]
L. H. Zeng,; D. Wu,; S. H. Lin,; C. Xie,; H. Y. Yuan,; W. Lu,; S. P. Lau,; Y. Chai,; L. B. Luo,; Z. J. Li, et al. Controlled synthesis of 2D palladium diselenide for sensitive photodetector applications. Adv. Funct. Mater. 2019, 29, 1806878.
Google Scholar
[35]
D. Y. Guo,; Y. L. Su,; H. Z. Shi,; P. G. Li,; N. Zhao,; J. H. Ye,; S. L. Wang,; A. P. Liu,; Z. W. Chen,; C. R. Li, et al. Self-powered ultraviolet photodetector with superhigh photoresponsivity (3.05 A/W) based on the GaN/Sn: Ga2O3 pn junction. ACS Nano 2018, 12, 12827-12835.
Google Scholar
[36]
Y. Lu,; J. Chen,; T. X. Chen,; Y. Shu,; R. J. Chang,; Y. W. Sheng,; V. Shautsova,; N. Mkhize,; P. Holdway,; H. Bhaskaran, et al. Controlling defects in continuous 2D GaS films for high-performance wavelength- tunable UV-discriminating photodetectors. Adv. Mater. 2020, 32, 1906958.
Google Scholar
[37]
S. M. Yadav,; A. Pandey, Low cost 2D-SnS2 nanosheets based UV-A-visible band photodetector. In Proceedings of the 2020 4th IEEE Electron Devices Technology & Manufacturing Conference, Penang, Malaysia, 2020.
[38]
Y. C. Chen,; Y. J. Lu,; C. N. Lin,; Y. Z. Tian,; C. J. Gao,; L. Dong,; C. X. Shan, Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging. J. Mater. Chem. C 2018, 6, 5727-5732.
Google Scholar
[39]
D. Y. Guo,; Z. P. Wu,; Y. H. An,; X. C. Guo,; X. L. Chu,; C. L. Sun,; L. H. Li,; P. G. Li,; W. H. Tang, Oxygen vacancy tuned Ohmic- Schottky conversion for enhanced performance in β-Ga2O3 solar- blind ultraviolet photodetectors. Appl. Phys. Lett. 2014, 105, 023507.
Google Scholar
[40]
Y. H. Lu,; Z. Q. Wu,; W. L. Xu,; S. S. Lin, ZnO quantum dot-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity. Nanotechnology 2016, 27, 48LT03.
Google Scholar
[41]
T. H. Flemban,; A. Haque,; I. Ajia,; N. Alwadai,; S. Mitra,; T. Wu,; I. S. Roqan, A photodetector based on p-Si/n-ZnO nanotube heterojunctions with high ultraviolet responsivity. ACS Appl. Mater. Interfaces 2017, 9, 37120-37127.
Google Scholar
[42]
Y. C. Wang,; C. Wu,; D. Y. Guo,; P. G. Li,; S. L. Wang,; A. P. Liu,; C. R. Li,; F. M. Wu,; W. H. Tang, All-oxide NiO/Ga2O3 p-n junction for self-powered UV photodetector. ACS Appl. Electron. Mater. 2020, 2, 2032-2038.
Google Scholar
[43]
H. Y. Chen,; P. P. Yu,; Z. Z. Zhang,; F. Teng,; L. X. Zheng,; K. Hu,; X. S. Fang, Ultrasensitive self-powered solar-blind deep-ultraviolet photodetector based on all-solid-state polyaniline/MgZnO bilayer. Small 2016, 12, 5809-5816.
Google Scholar
[44]
J. G. Yu,; Z. Z. Nie,; L. P. Dong,; L. Yuan,; D. J. Li,; Y. Huang,; L. C. Zhang,; Y. M. Zhang,; R. X. Jia, Influence of annealing temperature on structure and photoelectrical performance of β-Ga2O3/4H-SiC heterojunction photodetectors. J. Alloys Compd. 2019, 798, 458-466.
Google Scholar
[45]
S. Li,; D. Y. Guo,; P. G. Li,; X. Wang,; Y. H. Wang,; Z. Y. Yan,; Z. Liu,; Y. Zhi,; Y. S. Huang,; Z. P. Wu, et al. Ultrasensitive, superhigh signal-to-noise ratio, self-powered solar-blind photodetector based on n-Ga2O3/p-CuSCN core-shell microwire heterojunction. ACS Appl. Mater. Interfaces 2019, 11, 35105-35114.
Google Scholar
[46]
N. Prakash,; M. Singh,; G. Kumar,; A. Barvat,; K. Anand,; P. Pal,; S. P. Singh,; S. P. Khanna, Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes. Appl. Phys. Lett. 2016, 109, 242102.
Google Scholar
[47]
X. Zhou,; Q. Zhang,; L. Gan,; X. Li,; H. Q. Li,; Y. Zhang,; D. Golberg,; T. Y. Zhai, High-performance solar-blind deep ultraviolet photodetector based on individual single-crystalline Zn2GeO4 nanowire. Adv. Funct. Mater. 2016, 26, 704-712.
Google Scholar
[48]
Y. F. Wang,; L. Li,; H. B. Wang,; L. X. Su,; H. Y. Chen,; W. P. Bian,; J. G. Ma,; B. S. Li,; Z. G. Liu,; A. D. Shen, An ultrahigh responsivity self-powered solar-blind photodetector based on a centimeter-sized β-Ga2O3/polyaniline heterojunction. Nanoscale 2020, 12, 1406-1413.
Google Scholar
[49]
H. B. Wang,; H. Y. Chen,; L. Li,; Y. F. Wang,; L. X. Su,; W. P. Bian,; B. S. Li,; X. S. Fang, High responsivity and high rejection ratio of self-powered solar-blind ultraviolet photodetector based on PEDOT: PSS/β-Ga2O3 organic/inorganic p-n junction. J. Phys. Chem. Lett. 2019, 10, 6850-6856.
Google Scholar
[50]
H. Kan,; W. Zheng,; R. C. Lin,; M. Li,; C. Fu,; H. B. Sun,; M. Dong,; C. H. Xu,; J. T. Luo,; Y. Q. Fu, et al. Ultrafast photovoltaic-type deep ultraviolet photodetectors using hybrid zero-/two-dimensional heterojunctions. ACS Appl. Mater. Interfaces 2019, 11, 8412-8418.
Google Scholar
[51]
Z. Y. Yan,; S. Li,; Z. Liu,; Y. S. Zhi,; J. Dai,; X. .Y Sun,; S. Y. Sun,; D. Y. Guo,; X. Wang,; P. G. Li, et al. High sensitivity and fast response self-powered solar-blind ultraviolet photodetector with a β-Ga2O3/spiro-MeOTAD p-n heterojunction. J. Mater. Chem. C 2020, 8, 4502-4509.
Google Scholar
Nano Research
Volume 14 Issue 6,
June 2021
Pages 1973-1979
DOI: 10.1007/s12274-021-3346-7
Cite this article:
Wu D, Zhao Z, Lu W, et al. Highly sensitive solar-blind deep ultraviolet photodetector based on graphene/PtSe2/β-Ga2O3 2D/3D Schottky junction with ultrafast speed. Nano Research, 2021, 14(6): 1973-1979. https://doi.org/10.1007/s12274-021-3346-7
Topics:
Photodetectors
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The winners of “Top Papers Award” in 2022NR45 Awards in 2D Materials, 2021

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Received: 04 November 2020
Revised: 29 December 2020
Accepted: 19 January 2021
Published: 03 March 2021
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature
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