Erratum to: Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint

Chaoqi Dai; Peiqin Chen; Shaocheng Qi; Yongbin Hu; Zhitang Song; Mingzhi Dai

doi:10.1007/s12274-021-3377-0

| Sign up

PDF (867.7 KB)

Cite

EndNote(RIS) BibTeX

Collect

Submit Manuscript

Erratum

Erratum to: Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint

Chaoqi Dai^{¹^,²^,^§}, Peiqin Chen^{²^,^§}, Shaocheng Qi^{²^,^§}, Yongbin Hu^{²^,^§}, Zhitang Song^{³^,⁴}(), Mingzhi Dai^{²^,³}()

1 College of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China

2 Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

3 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

4 Shanghai Microsystem and Information Technology Institute, Chinese Academy of Sciences, Shanghai 200433, China

^§ Chaoqi Dai, Peiqin Chen, Shaocheng Qi, and Yongbin Hu contributed equally to this work.

Show Author Information

The online version of the original article can be found at:

https://doi.org/10.1007/s12274-020-3074-4

Keywords

small footprint flexible electronics neuromorphic circuit logic gates memory sensors

Nano Research

Volume 14 Issue 7,
July 2021

Pages 2469-2469

DOI: 10.1007/s12274-021-3377-0

Cite this article:

Dai C, Chen P, Qi S, et al. Erratum to: Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint. Nano Research, 2021, 14(7): 2469. https://doi.org/10.1007/s12274-021-3377-0