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Erratum

Erratum to: Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint

Chaoqi Dai1,2,§, Peiqin Chen2,§, Shaocheng Qi2,§, Yongbin Hu2,§, Zhitang Song3,4( ), Mingzhi Dai2,3( )
College of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Shanghai Microsystem and Information Technology Institute, Chinese Academy of Sciences, Shanghai 200433, China

§ Chaoqi Dai, Peiqin Chen, Shaocheng Qi, and Yongbin Hu contributed equally to this work.

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The online version of the original article can be found at:
https://doi.org/10.1007/s12274-020-3074-4

Keywords

small footprintflexible electronicsneuromorphic circuitlogic gatesmemorysensors
Nano Research
Volume 14 Issue 7,
July 2021
Pages 2469-2469
DOI: 10.1007/s12274-021-3377-0
Cite this article:
Dai C, Chen P, Qi S, et al. Erratum to: Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint. Nano Research, 2021, 14(7): 2469. https://doi.org/10.1007/s12274-021-3377-0

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Published: 05 July 2021
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020
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