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Research Article

Flexible multi-level quasi-volatile memory based on organic vertical transistor

Huihuang Yang1,2,§, Qian Yang1,2,3,§, Lihua He1, Xiaomin Wu1, Changsong Gao1, Xianghong Zhang1, Liuting Shan1, Huipeng Chen1,2 ( ), Tailiang Guo1,2
Institute of Optoelectronic Display National & Local United Engineering Lab of Flat Panel Display Technology Fuzhou UniversityFuzhou 350002 China
Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of ChinaFuzhou 350100 China
Zhicheng College Fuzhou UniversityFuzhou 350002 China

§ Huihuang Yang and Qian Yang contributed equally to this work.

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Abstract

Driven by important megatrends such as cloud computing, artificial intelligence, and the Internet of Things, as a device used to store programs and data in computing systems, memory is struggling to catch up with the explosive growth of data and bandwidth requirements in the system. However, the "storage wall" between non-volatile memory and volatile memory retards the further improvement of modern memory computing systems. Herein, a quasi-volatile transistor memory based on organic polymer/perovskite quantum dot blend was fabricated using the vertical transistor configuration. Contributing to vertical structure and appropriate doping ratio of blend film, the quasi-volatile memory device displayed 1, 560 times longer data retention time (> 100 s) with respect to the dynamic random access memory and fast data programming speed (20 μs) in which was far more quickly than that of other organic non-volatile memories to fill the gap between volatile and non-volatile memories. Moreover, the device retention characteristics could be further promoted under the photoelectric synergistic stimulation, which also provided the possibility to reduce electric writing condition. Furthermore, the quasi-volatile memory device showed good electrical performance under bending conditions. This work provides a simple solution to fabricate multi-level quasi-volatile memory, which opens up a whole new avenue of "universal memory" and lays a solid foundation for low power and flexible random access memory devices.

Keywords

vertical transistororganic transistor memoryperovskite quantum dotquasi-volatile memorystorage wall

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References

1

Thompson, J.; Ge, X. H.; Wu, H. C.; Irmer, R.; Jiang, H.; Fettweis, G.; Alamouti, S. 5G wireless communication systems: Prospects and challenges [Guest Editorial]. IEEE Commun. Mag. 2014, 52, 62–64.
Crossref Google Scholar
2

Thrall, J. H.; Li, X.; Li, Q. Z.; Cruz, C.; Do, S.; Dreyer, K.; Brink, J. Artificial intelligence and machine learning in radiology: Opportunities, challenges, pitfalls, and criteria for success. J. Am. Coll. Radiol. 2018, 15, 504–508.
Crossref Google Scholar
3
McKee, S. A.; Wisniewski, R. W. Memory wall. In Encyclopedia of Parallel Computing. Padua, D., Ed.; Springer: Boston, 2011; pp. 1110–1116.https://doi.org/10.1007/978-0-387-09766-4_234
Crossref
4

Lee, J.; Pak, S.; Lee, Y. W.; Cho, Y.; Hong, J.; Giraud, P.; Shin, H. S.; Morris, S. M.; Sohn, J. I.; Cha, S. et al. Monolayer optical memory cells based on artificial trap-mediated charge storage and release. Nat. Commun. 2017, 8, 14734.
Crossref Google Scholar
5

Seevinck, E.; List, F. J.; Lohstroh, J. Static-noise margin analysis of MOS SRAM cells. IEEE J. Solid-State Circuits 1987, 22, 748–754.
Crossref Google Scholar
6

Chun, K. C.; Jain, P.; Kim, T. H.; Kim, C. H. A 667 MHz logic- compatible embedded DRAM featuring an asymmetric 2T gain cell for high speed on-die caches. IEEE J. Solid-State Circuits 2012, 47, 547–559.
Crossref Google Scholar
7

Jung, T. S.; Choi, Y. J.; Suh, K. D.; Suh, B. H.; Kim, J. K.; Lim, Y. H.; Koh, Y. N.; Park, J. W.; Lee, K. J.; Park, J. H. et al. A 117-mm2 3.3-V only 128-Mb multilevel NAND flash memory for mass storage applications. IEEE J. Solid-State Circuits 1996, 31, 1575–1583.
Crossref Google Scholar
8

Zheng, C. Y.; Liao, Y.; Han, S. T.; Zhou, Y. Interface modification in three-terminal organic memory and synaptic device. Adv. Electron. Mater. 2020, 6, 2000641.
Crossref Google Scholar
9

Xu, T.; Guo, S. X.; Qi, W. H.; Li, S. Z.; Xu, M. L.; Wang, W. Organic transistor nonvolatile memory with three-level information storage and optical detection functions. ACS Appl. Mater. Interfaces 2020, 12, 21952–21960.
Crossref Google Scholar
10

Qu, T. Y.; Sun, Y.; Chen, M. L.; Liu, Z. B.; Zhu, Q. B.; Wang, B. W.; Zhao, T. Y.; Liu, C.; Tan, J.; Qiu, S. et al. A flexible carbon nanotube sen-memory device. Adv. Mater. 2020, 32, 1907288.
Crossref Google Scholar
11

Hu, D. B.; Wang, X. M.; Chen, H. P.; Guo, T. L. High performance flexible nonvolatile memory based on vertical organic thin film transistor. Adv. Funct. Mater. 2017, 27, 1703541.
Crossref Google Scholar
12

Wu, X. M.; Lan, S. Q.; Hu, D. B.; Chen, Q. Z.; Li, E. L.; Yan, Y. J.; Chen, H. P.; Guo, T. L. High performance flexible multilevel optical memory based on a vertical organic field effect transistor with ultrashort channel length. J. Mater. Chem. C 2019, 7, 9229–9240.
Crossref Google Scholar
13

Lan, S. Q.; Zhong, J. F.; Li, E. L.; Yan, Y. J.; Wu, X. M.; Chen, Q. Z.; Lin, W. K.; Chen, H. P.; Guo, T. L. High-performance nonvolatile organic photoelectronic transistor memory based on bulk heterojunction structure. ACS Appl. Mater. Interfaces 2020, 12, 31716–31724.
Crossref Google Scholar
14

Wulf, W. A.; McKee, S. A. Hitting the memory wall: Implications of the obvious. ACM SIGARCH Comput. Archit. News 1995, 23, 20–24.
Crossref Google Scholar
15

Ielmini, D.; Wong, H. S. P. In-memory computing with resistive switching devices. Nat. Electron. 2018, 1, 333–343.
Crossref Google Scholar
16

Yoshida, E.; Tanaka, T. A capacitorless 1T-DRAM technology using gate-induced drain-leakage (GIDL) current for low-power and high-speed embedded memory. IEEE Trans. Electron Devices 2006, 53, 692–697.
Crossref Google Scholar
17

Zhou, Z. M.; Fossum, J. G.; Lu, Z. C. Physical insights on BJT-based 1T DRAM cells. IEEE Electron Device Lett. 2009, 30, 565–567.
Crossref Google Scholar
18

Kupke, S.; Knebel, S.; Schroeder, U.; Schmelzer, S.; Bottger, U.; Mikolajick, T. Reliability of SrRuO3/SrTiO3/SrRuO3 stacks for DRAM applications. IEEE Electron Device Lett. 2012, 33, 1699–1701.
Crossref Google Scholar
19

Lee, M. J.; Park, K. W. A mechanism for dependence of refresh time on data pattern in DRAM. IEEE Electron Device Lett. 2010, 31, 168–170.
Crossref Google Scholar
20

Gong, Y. H.; Chung, S. W. Exploiting refresh effect of DRAM read operations: A practical approach to low-power refresh. IEEE Trans. Comput. 2016, 65, 1507–1517.
Crossref Google Scholar
21

Liu, C. S.; Yan, X.; Song, X. F.; Ding, S. J.; Zhang, D. W.; Zhou, P. A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications. Nat. Nanotechnol. 2018, 13, 404–410.
Crossref Google Scholar
22

Gundapaneni, S.; Ganguly, S.; Kottantharayil, A. Bulk planar junctionless transistor (BPJLT): An attractive device alternative for scaling. IEEE Electron Device Lett. 2011, 32, 261–263.
Crossref Google Scholar
23

Hou, X.; Chen, H. W.; Zhang, Z. H.; Wang, S. Y.; Zhou, P. 2D atomic crystals: A promising solution for next-generation data storage. Adv. Electron. Mater. 2019, 5, 1800944.
Crossref Google Scholar
24

Yang, J. J.; Strukov, D. B.; Stewart, D. R. Memristive devices for computing. Nat. Nanotechnol. 2013, 8, 13–24.
Crossref Google Scholar
25

Zhang, P.; Yi, M. D.; Huang, L. Y.; Shi, W.; Zhu, J. T.; Huang, W. Improvement of memory characteristics for an organic charge trapping memory by introduction of PS tunneling layer. Org. Electron. 2020, 87, 105967.
Crossref Google Scholar
26

Zheng, C. Y.; Tong, T.; Hu, Y. M.; Gu, Y. M.; Wu, H. R.; Wu, D. Q.; Meng, H.; Yi, M. D.; Ma, J.; Gao, D. Q. et al. Charge-storage aromatic amino compounds for nonvolatile organic transistor memory devices. Small 2018, 14, 1800756.
Crossref Google Scholar
27

Yang, H. H.; Liu, Y. Q.; Wu, X. M.; Yan, Y. J.; Wang, X. M.; Lan, S. Q.; Zhang, G. C.; Chen, H. P.; Guo, T. L. High-performance all-inorganic perovskite-quantum-dot-based flexible organic phototransistor memory with architecture design. Adv. Electron. Mater. 2019, 5, 1900864.
Crossref Google Scholar
28

Hwang, S. K.; Bae, I.; Kim, R. H.; Park, C. Flexible non-volatile ferroelectric polymer memory with gate-controlled multilevel operation. Adv. Mater. 2012, 24, 5910–5914.
Crossref Google Scholar
29

Mukherjee, B.; Zulkefli, A.; Watanabe, K.; Taniguchi, T.; Wakayama, Y.; Nakaharai, S. Laser-assisted multilevel non-volatile memory device based on 2D van-der-waals few-layer-ReS2/h-BN/Graphene heterostructures. Adv. Funct. Mater. 2020, 30, 2001688.
Crossref Google Scholar
30

Yang, H. H.; Yan, Y. J.; Wu, X. M.; Liu, Y. Q.; Chen, Q. Z.; Zhang, G. C.; Chen, S. M.; Chen, H. P.; Guo, T. L. A multilevel vertical photonic memory transistor based on organic semiconductor/inorganic perovskite quantum dot blends. J. Mater. Chem. C 2020, 8, 2861–2869.
Crossref Google Scholar
31

Yoo, E. J.; Lyu, M.; Yun, J. H.; Kang, C. J.; Choi, Y. J.; Wang, L. Z. Resistive switching behavior in organic-inorganic hybrid CH3NH3PbI3–xClx perovskite for resistive random access memory devices. Adv. Mater. 2015, 27, 6170–6175.
Crossref Google Scholar
32

Zhou, F. C.; Zhou, Z.; Chen, J. W.; Choy, T. H.; Wang, J. L.; Zhang, N.; Lin, Z. Y.; Yu, S. M.; Kang, J. F.; Wong, H. S. P. et al. Optoelectronic resistive random access memory for neuromorphic vision sensors. Nat. Nanotechnol. 2019, 14, 776–782.
Crossref Google Scholar
33

Li, E. L.; Lin, W. K.; Yan, Y. J.; Yang, H. H.; Wang, X. M.; Chen, Q. Z.; Lv, D. X.; Chen, G. X.; Chen, H. P.; Guo, T. L. Synaptic transistor capable of accelerated learning induced by temperature-facilitated modulation of synaptic plasticity. ACS Appl. Mater. Interfaces 2019, 11, 46008–46016.
Crossref Google Scholar
34

Yu, R. J.; Li, E. L.; Wu, X. M.; Yan, Y. J.; He, W. X.; He, L. H.; Chen, J. W.; Chen, H. P.; Guo, T. L. Electret-based organic synaptic transistor for neuromorphic computing. ACS Appl. Mater. Interfaces 2020, 12, 15446–15455.
Crossref Google Scholar
35

Mao, J. Y.; Zheng, Z.; Xiong, Z. Y.; Huang, P.; Ding, G. L.; Wang, R. P.; Wang, Z. P.; Yang, J. Q.; Zhou, Y.; Zhai, T. Y. et al. Lead-free monocrystalline perovskite resistive switching device for temporal information processing. Nano Energy 2020, 71, 104616.
Crossref Google Scholar
36

Ding, Y.; Liu, L.; Li, J. Y.; Cao, R. R.; Jiang, Y. G.; Liu, C. S.; Liu, Q.; Zhou, P. A semi-floating memory with 535% enhancement of refresh time by local field modulation. Adv. Funct. Mater. 2020, 30, 1908089.
Crossref Google Scholar
37

Kshirsagar, C. U.; Xu, W. C.; Su, Y.; Robbins, M. C.; Kim, C. H.; Koester, S. J. Dynamic memory cells using MoS2 field-effect transistors demonstrating femtoampere leakage currents. ACS Nano 2016, 10, 8457–8464.
Crossref Google Scholar
38

Yang, K.; Liu, H. X.; Wang, S. L.; Yu, W. L.; Han, T. Comprehensive performance quasi-non-volatile memory compatible with large-scale preparation by chemical vapor deposition. Nanomaterials 2020, 10, 1471.
Crossref Google Scholar
39

Chen, H. J.; Guo, Y. L.; Yu, G.; Zhao, Y.; Zhang, J.; Gao, D.; Liu, H. T.; Liu, Y. Q. Highly π-extended copolymers with diketopyrrolopyrrole moieties for high-performance field-effect transistors. Adv. Mater. 2012, 24, 4618–4622.
Crossref Google Scholar
40

Liu, D. J.; Lin, Q. Q.; Zang, Z. G.; Wang, M.; Wangyang, P. H.; Tang, X. S.; Zhou, M.; Hu, W. Flexible all-inorganic perovskite CsPbBr3 nonvolatile memory device. ACS Appl. Mater. Interfaces 2017, 9, 6171–6176.
Crossref Google Scholar
41

Chen, J. S.; Liu, D. Z.; Al-Marri, M. J.; Nuuttila, L.; Lehtivuori, H.; Zheng, K. B. Photo-stability of CsPbBr3 perovskite quantum dots for optoelectronic application. Sci. China Mater. 2016, 59, 719–727.
Crossref Google Scholar
42

Protesescu, L.; Yakunin, S.; Bodnarchuk, M. I.; Krieg, F.; Caputo, R.; Hendon, C. H.; Yang, R. X.; Walsh, A.; Kovalenko, M. V. Nanocrystals of cesium lead halide perovskites (CsPbX3, X = Cl, Br, and I): Novel optoelectronic materials showing bright emission with wide color gamut. Nano Lett. 2015, 15, 3692–3696.
Crossref Google Scholar
43

Swarnkar, A.; Chulliyil, R.; Ravi, V. K.; Irfanullah, M.; Chowdhury, A.; Nag, A. Colloidal CsPbBr3 perovskite nanocrystals: Luminescence beyond traditional quantum dots. Angew. Chem., Int. Ed. 2015, 54, 15424–15428.
Crossref Google Scholar
44

Cottingham, P.; Brutchey, R. L. On the crystal structure of colloidally prepared CsPbBr3 quantum dots. Chem. Commun. 2016, 52, 5246– 5249.
Crossref Google Scholar
45

Zheng, C.; Bi, C. H.; Huang, F.; Binks, D.; Tian, J. J. Stable and strong emission CsPbBr3 quantum dots by surface engineering for high-performance optoelectronic films. ACS Appl. Mater. Interfaces 2019, 11, 25410–25416.
Crossref Google Scholar
46

Peng, B. Y.; Cao, K.; Lau, A. H. Y.; Chen, M.; Lu, Y.; Chan, P. K. L. Crystallized monolayer semiconductor for ohmic contact resistance, high intrinsic gain, and high current density. Adv. Mater. 2020, 32, 2002281.
Crossref Google Scholar
47

Yue, D. W.; Kim, C.; Lee, K. Y.; Yoo, W. J. Ohmic contact in 2D semiconductors via the formation of a benzyl viologen interlayer. Adv. Funct. Mater. 2019, 29, 1807338.
Crossref Google Scholar
48

Liao, M. Y.; Chiang, Y. C.; Chen, C. H.; Chen, W. C.; Chueh, C. C. Two-dimensional Cs2Pb(SCN)2Br2-Based photomemory devices showing a photoinduced recovery behavior and an unusual fully optically driven memory behavior. ACS Appl. Mater. Interfaces 2020, 12, 36398–36408.
Crossref Google Scholar
49

He, Y. L.; Nie, S.; Liu, R.; Jiang, S. S.; Shi, Y.; Wan, Q. Spatiotemporal information processing emulated by multiterminal neuro-transistor networks. Adv. Mater. 2019, 31, 1900903.
Crossref Google Scholar
50

Yi, M. D.; Xie, M.; Shao, Y. Q.; Li, W.; Ling, H. F.; Xie, L. H.; Yang, T.; Fan, Q. L.; Zhu, J. L.; Huang, W. Light programmable/erasable organic field-effect transistor ambipolar memory devices based on the pentacene/PVK active layer. J. Mater. Chem. C 2015, 3, 5220–5225.
Crossref Google Scholar
51

Pei, K.; Ren, X. C.; Zhou, Z. W.; Zhang, Z. C.; Ji, X. D.; Chan, P. K. L. A high-performance optical memory array based on inhomogeneity of organic semiconductors. Adv. Mater. 2018, 30, 1706647.
Crossref Google Scholar
52

Shi, N. E.; Liu, D.; Jin, X. L.; Wu, W. D.; Zhang, J.; Yi, M. D.; Xie, L. H.; Guo, F. N.; Yang, L.; Ou, C. J. et al. Floating-gate nanofibrous electret arrays for high performance nonvolatile organic transistor memory devices. Org. Electron. 2017, 49, 218–225.
Crossref Google Scholar
53

Wang, Y.; Yang, J.; Ye, W. B.; She, D. H.; Chen, J. R.; Lv, Z. Y.; Roy, V. A. L.; Li, H. L.; Zhou, K.; Yang, Q. et al. Near-infrared-irradiation- mediated synaptic behavior from tunable charge-trapping dynamics. Adv. Electron. Mater. 2020, 6, 1900765.
Crossref Google Scholar
54

Chiu, Y. C.; Sun, H. S.; Lee, W. Y.; Halila, S.; Borsali, R.; Chen, W. C. Oligosaccharide carbohydrate dielectrics toward high-performance non-volatile transistor memory devices. Adv. Mater. 2015, 27, 6257–6264.
Crossref Google Scholar
55

Zhu, J. Y.; Xie, Z. F.; Sun, X. K.; Zhang, S. Y.; Pan, G. C.; Zhu, Y. S.; Dong, B.; Bai, X.; Zhang, H. Z.; Song, H. W. Highly efficient and stable inorganic perovskite quantum dots by embedding into a polymer matrix. Chemnanomat 2019, 5, 346–351.
Crossref Google Scholar
56

Huang, H.; Susha, A. S.; Kershaw, S. V.; Hung, T. F.; Rogach, A. L. Control of emission color of high quantum yield CH3NH3PbBr3 perovskite quantum dots by precipitation temperature. Adv. Sci. 2015, 2, 1500194.
Crossref Google Scholar
57

Leng, M. Y.; Chen, Z. W.; Yang, Y.; Li, Z.; Zeng, K.; Li, K. H.; Niu, G. D.; He, Y. S.; Zhou, Q. C.; Tang, J. Lead-free, blue emitting bismuth halide perovskite quantum dots. Angew. Chem., Int. Ed. 2016, 55, 15012–15016.
Crossref Google Scholar
58

Lv, W. Z.; Li, L.; Xu, M. C.; Hong, J. X.; Tang, X. X.; Xu, L. G.; Wu, Y. H.; Zhu, R.; Chen, R. F.; Huang, W. Improving the stability of metal halide perovskite quantum dots by encapsulation. Adv. Mater. 2019, 31, 1900682.
Crossref Google Scholar
59

Kim, T.; Lim, J. W.; Yun, S. J.; Lee, S. H.; Jung, K. H. Multi-level long-term memory resembling human memory based on photosensitive field-effect transistors with stable interfacial deep traps. Adv. Electron. Mater. 2020, 6, 1901044.
Crossref Google Scholar
60

Debucquoy, M.; Rockele, M.; Genoe, J.; Gelinck, G. H.; Heremans, P. Charge trapping in organic transistor memories: On the role of electrons and holes. Org. Electron. 2009, 10, 1252–1258.
Crossref Google Scholar
61

Kraft, U.; Zschieschang, U.; Ante, F.; Kälblein, D.; Kamella, C.; Amsharov, K.; Jansen, M.; Kern, K.; Weber, E.; Klauk, H. Fluoroalkylphosphonic acid self-assembled monolayer gate dielectrics for threshold-voltage control in low-voltage organic thin-film transistors. J. Mater. Chem. 2010, 20, 6416–6418.
Crossref Google Scholar
62

Li, Q. K.; Bi, S.; Asare-Yeboah, K.; Na, J.; Liu, Y.; Jiang, C. M.; Song, J. H. High performance vertical resonant photo-effect-transistor with an all-around OLED-gate for ultra-electromagnetic stability. ACS Nano 2019, 13, 8425–8432.
Crossref Google Scholar
63

Larrieu, G.; Han, X. L. Vertical nanowire array-based field effect transistors for ultimate scaling. Nanoscale 2013, 5, 2437–2441.
Crossref Google Scholar
64

Feng, G. D.; Jiang, J.; Zhao, Y. H.; Wang, S. T.; Liu, B.; Yin, K.; Niu, D. M.; Li, X. H.; Chen, Y. Q.; Duan, H. G. et al. A sub-10 nm vertical organic/inorganic hybrid transistor for pain-perceptual and sensitization-regulated nociceptor emulation. Adv. Mater. 2020, 32, 1906171.
Crossref Google Scholar
65

Gao, H. K.; Liu, J. Y.; Qin, Z. S.; Wang, T. Y.; Gao, C.; Dong, H. L.; Hu, W. P. High-performance amorphous organic semiconductor-based vertical field-effect transistors and light-emitting transistors. Nanoscale 2020, 12, 18371–18378.
Crossref Google Scholar
66

Huang, H. L.; Zhao, F. C.; Liu, L. G.; Zhang, F.; Wu, X. G.; Shi, L. J.; Zou, B. S.; Pei, Q. B.; Zhong, H. Z. Emulsion synthesis of size-tunable CH3NH3PbBr3 quantum dots: An alternative route toward efficient light-emitting diodes. ACS Appl. Mater. Interfaces 2015, 7, 28128–28133.
Crossref Google Scholar
Nano Research
Volume 15 Issue 1,
January 2022
Pages 386-394
DOI: 10.1007/s12274-021-3489-6
Cite this article:
Yang H, Yang Q, He L, et al. Flexible multi-level quasi-volatile memory based on organic vertical transistor. Nano Research, 2022, 15(1): 386-394. https://doi.org/10.1007/s12274-021-3489-6
Topics:
Field effect transistors

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Received: 23 February 2021
Revised: 21 March 2021
Accepted: 30 March 2021
Published: 09 May 2021
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021
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