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Research Article

Phase-pure two-dimensional FexGeTe2 magnets with near-room- temperature TC

Govindan Kutty Rajendran Nair1,§, Zhaowei Zhang2,§, Fuchen Hou3,6,§, Ali Abdelaziem1,4,7,§, Xiaodong Xu5, Steve Wu Qing Yang2, Nan Zhang2, Weiqi Li5, Chao Zhu1, Yao Wu1, Heng Weiling1, Lixing Kang1, Teddy Salim1, Jiadong Zhou1, Lin Ke2, Junhao Lin3,6, Xingji Li5( ), Weibo Gao2( ), Zheng Liu1,8,9( )
School of Material Science and Engineering 50 Nanyang Ave 639798 Singapore
Division of Physics and Applied Physics School of Physical and Mathematical Sciences, Nanyang Technological University21 Nanyang Link 637371 Singapore
Department of Physics, Southern University of Science and Technology Shenzhen 518055 China
Institute of Materials Research and Engineering Agency for Science Technology and Research (A*STAR)2 Fusionopolis Way, Singapore 138634 Singapore
School of Material Science and Engineering School of Physics, Harbin Institute of TechnologyHarbin 150001 China
Shenzhen Key Laboratory of for Advanced Quantum Functional Materials and Devices Southern University of Science and TechnologyShenzhen 518055 China
National Institute of Laser Enhanced Sciences (NILES) Cairo UniversityGiza 12613 Egypt
CINTRA CNRS/NTU/THALES UMI 3288Research Techno Plaza 637553 Singapore
School of Electrical and Electronic Engineering Nanyang Technological University50 Nanyang Ave 639798 Singapore

§ Govindan Kutty Rajendran Nair, Zhaowei Zhang, Fuchen Hou, and Ali Abdelaziem contributed equally to this work.

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An erratum to this article is available online at:
https://doi.org/10.1007/s12274-021-3651-1

Graphical Abstract

Abstract

Two-dimensional (2D) ferromagnets with out-of-plane (OOP) magnetic anisotropy are potential candidates for realizing the next-generation memory devices with ultra-low power consumption and high storage density. However, a scalable approach to synthesize 2D magnets with OOP anisotropy directly on the complimentary metal-oxide semiconductor (CMOS) compatible substrates has not yet been mainly explored, which hinders the practical application of 2D magnets. This work demonstrates a cascaded space confined chemical vapor deposition (CS-CVD) technique to synthesize 2D FexGeTe2 ferromagnets. The weight fraction of iron (Fe) in the precursor controls the phase purity of the as-grown FexGeTe2. As a result, high-quality Fe3GeTe2 and Fe5GeTe2 flakes have been grown selectively using the CS-CVD technique. Curie temperature (TC) of the as-grown FexGeTe2 can be up to ~ 280 K, nearly room temperature. The thickness and temperature-dependent magnetic studies on the Fe5GeTe2 reveal a 2D Ising to 3D XY behavior. Also, Terahertz spectroscopy experiments on Fe5GeTe2 display the highest conductivity among other FexGeTe2 2D magnets. The results of this work indicate a scalable pathway for the direct growth and integration of 2D ternary magnets on CMOS-based substrates to develop spintronic memory devices.

Keywords

cascaded space confined chemical vapor deposition (CVD)van der Waals (vdW)ferromagnetismout of plane anisotropyiron germanium tellurideterahertz

Electronic Supplementary Material

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Nano Research
Volume 15 Issue 1,
January 2022
Pages 457-464
DOI: 10.1007/s12274-021-3502-0
Cite this article:
Nair GKR, Zhang Z, Hou F, et al. Phase-pure two-dimensional FexGeTe2 magnets with near-room- temperature TC. Nano Research, 2022, 15(1): 457-464. https://doi.org/10.1007/s12274-021-3502-0
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Received: 21 January 2021
Revised: 20 March 2021
Accepted: 06 April 2021
Published: 01 June 2021
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021
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