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Monolayer two-dimensional (2D) semiconductors are emerging as top candidates for the channels of the future chip industry due to their atomically thin body and superior immunity to short channel effect. However, the low saturation current caused by the high contact resistance (Rc) in monolayer MoS2 field-effect transistors (FETs) limits ultimate electrical performance at scaled contact lengths, which seriously hinders application of monolayer MoS2 transistors. Here we present a scalable strategy with a clean end-bond contact scheme that leads to size-independent electrodes and ultralow contact resistance of 2.5 kΩ·μm to achieve record high performances of saturation current density of 730 μA·μm-1 at 300 K and 960 μA·μm-1 at 6 K. Our end-bond contact strategy in monolayer MoS2 FETs enables the great potential for atomically thin integrated circuitry.
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