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Two-dimensional materials have been demonstrated as promising toolboxes for optoelectronics. Transition metal carbides and nitrides (MXenes), members of an emerging family of two-dimensional materials, have drawn extensive attention in optoelectronics owing to their excellent conductivity and tunable electronic properties. Herein, a photodetector based on the two-dimensional van der Waals heterostructure of Ti3C2Tx MXene and a MoS2 monolayer was constructed to observe the ambipolar photoresponse, which showed a positive photoresponse in the visible spectrum (500–700 nm) and a negative photoresponse at longer wavelengths (700–800 nm). The device exhibited a high negative responsivity of 1.9 A/W and a detectivity of 2.1 × 1010 Jones under 750 nm light illumination. Detailed experiments demonstrate that the negative photoresponse arises from the heterostructure- induced trap energy level, which confines the excited photoelectrons and leads to an inverse current. This work demonstrates a unique optoelectronic phenomenon in MoS2/MXene heterostructures and provides valuable insights into the development of new photodetection materials.
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