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Research Article

Towards intrinsically pure graphene grown on copper

Xiaozhi Xu1,2,§( ), Ruixi Qiao3,4,§, Zhihua Liang1,2, Zhihong Zhang3,4, Ran Wang1,2, Fankai Zeng1,2, Guoliang Cui1,2, Xiaowen Zhang1,2, Dingxin Zou5, Yi Guo3, Can Liu3, Ying Fu6, Xu Zhou1,2, Muhong Wu4, Zhujun Wang7, Yue Zhao5, Enke Wang1,2, Zhilie Tang1,2, Dapeng Yu5, Kaihui Liu3,4( )
Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials School of Physics and Telecommunication Engineering South China Normal University Guangzhou 510006 China
Guangdong-Hong Kong Joint Laboratory of Quantum Matter South China Normal University Guangzhou 510006 China
State Key Laboratory for Mesoscopic Physics Frontiers Science Center for Nano-optoelectronics School of Physics Peking University Beijing 100871 China
International Centre for Quantum Materials Collaborative Innovation Centre of Quantum Matter Peking University Beijing 100871 China
Shenzhen Institute for Quantum Science and Engineering, and Department of Physics Southern University of Science and Technology Shenzhen 518055 China
Songshan Lake Materials Laboratory Institute of Physics Chinese Academy of Sciences Guangdong 523808 China
School of Physical Science and Technology ShanghaiTech University Shanghai 200031 China

§ Xiaozhi Xu and Ruixi Qiao contributed equally to this work.

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Graphical Abstract

Abstract

The state-of-the-art semiconductor industry is built on the successful production of silicon ingot with extreme purity as high as 99.999999999%, or the so-called "eleven nines". The coming high-end applications of graphene in electronics and optoelectronics will inevitably need defect-free pure graphene as well. Due to its two-dimensional (2D) characteristics, graphene restricts all the defects on its surface and has the opportunity to eliminate all kinds of defects, i.e., line defects at grain boundaries and point or dot defects in grains, and produce intrinsically pure graphene. In the past decade, epitaxy growth has been adopted to grow graphene by seamlessly stitching of aligned grains and the line defects at grain boundaries were eliminated finally. However, as for the equally common dot and point defects in graphene grain, there are rare ways to detect or reduce them with high throughput and efficiency. Here, we report a methodology to realize the production of ultrapure graphene grown on copper by eliminating both the dot and point defects in graphene grains. The dot defects, proved to be caused by the silica particles shedding from quartz tube during the high-temperature growth, were excluded by a designed heat-resisting box to prevent the deposition of particles on the copper surface. The point defects were optically visualized by a mild-oxidation-assisted method and further reduced by etching-regrowth process to an ultralow level of less than 1/1, 000 μm2. Our work points out an avenue for the production of intrinsically pure graphene and thus lays the foundation for the large-scale graphene applications at the integrated-circuit level.

Keywords

pure graphenepoint defectmild-oxidationcopper

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Nano Research
Volume 15 Issue 2,
February 2022
Pages 919-924
DOI: 10.1007/s12274-021-3575-9
Cite this article:
Xu X, Qiao R, Liang Z, et al. Towards intrinsically pure graphene grown on copper. Nano Research, 2022, 15(2): 919-924. https://doi.org/10.1007/s12274-021-3575-9
Topics:
Graphene

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Received: 15 February 2021
Revised: 02 May 2021
Accepted: 05 May 2021
Published: 09 June 2021
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021
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