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Research Article

Unveiling the origin of anomalous low-frequency Raman mode in CVD-grown monolayer WS2

Qian Xiang1,5,§, Xiaofei Yue2,§, Yanlong Wang1( ), Bin Du3, Jiajun Chen2, Shaoqian Zhang1, Gang Li1, Chunxiao Cong2( ), Ting Yu4( ), Qingwei Li1, Yuqi Jin1
Key Laboratory of Chemical Lasers, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China
State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University, Shanghai 200433, China
School of Materials Science and Engineering, Xi’an Polytechnic University, Xi’an 710048, China
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
University of Chinese Academy of Sciences, Beijing 100049, China

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Abstract

Substrates provide the necessary support for scientific explorations of numerous promising features and exciting potential applications in two-dimensional (2D) transition metal dichalcogenides (TMDs). To utilize substrate engineering to alter the properties of 2D TMDs and avoid introducing unwanted adverse effects, various experimental techniques, such as high-frequency Raman spectroscopy, have been used to understand the interactions between 2D TMDs and substrates. However, sample–substrate interaction in 2D TMDs is not yet fully understood due to the lack of systematic studies by techniques that are sensitive to 2D TMD–substrate interaction. This work systematically investigates the interaction between tungsten disulfide (WS2) monolayers and substrates by low-frequency Raman spectroscopy, which is very sensitive to WS2–substrate interaction. Strong coupling with substrates is clearly revealed in chemical vapor deposition (CVD)-grown monolayer WS2 by its low-wavenumber interface mode. It is demonstrated that the enhanced sample–substrate interaction leads to tensile strain on monolayer WS2, which is induced during the cooling process of CVD growth and could be released for monolayer WS2 sample after transfer or fabricated by an annealing-free method such as mechanical exfoliation. These results not only suggest the effectiveness of low-frequency Raman spectroscopy for probing sample–substrate interactions in 2D TMDs, but also provide guidance for the design of high-performance devices with the desired sample–substrate coupling strength based on 2D TMDs.

Keywords

interface modemonolayer tungsten disulfidelow-frequency Raman spectroscopysample–substrate interactionstrainchemical vapor deposition

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Nano Research
Volume 14 Issue 11,
November 2021
Pages 4314-4320
DOI: 10.1007/s12274-021-3769-1
Cite this article:
Xiang Q, Yue X, Wang Y, et al. Unveiling the origin of anomalous low-frequency Raman mode in CVD-grown monolayer WS2. Nano Research, 2021, 14(11): 4314-4320. https://doi.org/10.1007/s12274-021-3769-1
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Semiconducting films

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Received: 13 May 2021
Revised: 18 July 2021
Accepted: 27 July 2021
Published: 12 August 2021
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021
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