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Research Article

Effects of interlayer coupling on the excitons and electronic structures of WS2/hBN/MoS2 van der Waals heterostructures

Xudan Zhu1, Junbo He1, Rongjun Zhang1( ), Chunxiao Cong2( ), Yuxiang Zheng1, Hao Zhang1, Songyou Wang1, Haibin Zhao1, Meiping Zhu3, Shanwen Zhang4, Shaojuan Li5, Liangyao Chen1
Key Laboratory of Micro and Nano Photonic Structures, Ministry of Education, Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing, School of Information Science and Engineering, Fudan University, Shanghai 200433, China
State Key Laboratory of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai 200433, China
Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
Grating Technology Laboratory, Changchun Institute of Optics and Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
State Key Laboratory of Applied Optics, Changchun Institute of Optics Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
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Graphical Abstract

Abstract

Inserting hexagonal boron nitride (hBN) as barrier layers into bilayer transition metal dichalcogenides heterointerface has been proved an efficient method to improve two dimensional tunneling optoelectronic device performance. Nevertheless, the physical picture of interlayer coupling effect during incorporation of monolayer (1L-) hBN is not explicit yet. In this article, spectroscopic ellipsometry was used to experimentally obtain the broadband excitonic and critical point properties of WS2/MoS2 and WS2/hBN/MoS2 van der Waals heterostructures. We find that 1L-hBN can only slightly block the interlayer electron transfer from WS2 layer to MoS2 layer. Moreover, insertion of 1L-hBN weakens the interlayer coupling effect by releasing quantum confinement and reducing efficient dielectric screening. Consequently, the exciton binding energies in WS2/hBN/MoS2 heterostructures blueshift comparing to those in WS2/MoS2 heterostructures. In this exciton binding energies tuning process, the reducing dielectric screening effect plays a leading role. In the meantime, the quasi-particle (QP) bandgap remains unchanged before and after 1L-hBN insertion, which is attributed to released quantum confinement and decreased dielectric screening effects canceling each other. Unchanged QP bandgap as along with blueshift exciton binding energies lead to the redshift exciton transition energies in WS2/hBN/MoS2 heterostructures.

Keywords

two-dimensional (2D) van der Waals heterostructureinterlayer couplingexcitonscritical pointsspectroscopic ellipsometry

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Nano Research
Volume 15 Issue 3,
March 2022
Pages 2674-2681
DOI: 10.1007/s12274-021-3774-4
Cite this article:
Zhu X, He J, Zhang R, et al. Effects of interlayer coupling on the excitons and electronic structures of WS2/hBN/MoS2 van der Waals heterostructures. Nano Research, 2022, 15(3): 2674-2681. https://doi.org/10.1007/s12274-021-3774-4
Topics:
Layered semiconductors

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Received: 20 May 2021
Revised: 19 July 2021
Accepted: 27 July 2021
Published: 19 August 2021
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021
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