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Research Article

Reconfigurable photovoltaic effect for optoelectronic artificial synapse based on ferroelectric p–n junction

Yanrong Wang1,4,5,§, Feng Wang1,3,§, Zhenxing Wang1,3,4( ), Junjun Wang1,3, Jia Yang1,3, Yuyu Yao1,4,5, Ningning Li1,4,5, Marshet Getaye Sendeku1, Xueying Zhan1, Congxin Shan6, Jun He2( )
CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China
Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Sino-Danish college, University of Chinese Academy of Sciences, Beijing 100049, China
Sino-Danish Centre for Education and Research, Beijing 100049, China
School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China

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Abstract

Neuromorphic machine vision has attracted extensive attention on wide fields. However, both current and emerging strategies still suffer from power/time inefficiency, and/or low compatibility, complex device structure. Here we demonstrate a driving-voltage-free optoelectronic synaptic device using non-volatile reconfigurable photovoltaic effect based on MoTe2/α-In2Se3 ferroelectric p–n junctions. This function comes from the non-volatile reconfigurable built-in potential in the p–n junction that is related to the ferroelectric polarization in α-In2Se3. Reconfigurable rectification behavior and photovoltaic effect are demonstrated firstly. Notably, the figure-of-merits for photovoltaic effect like photoelectrical conversion efficiency non-volatilely increases more than one order. Based on this, retina synapse-like vision functions are mimicked. Optoelectronic short-term and long-term plasticity, as well as basic neuromorphic learning and memory rule are achieved without applying driving voltage. Our work highlights the potential of ferroelectric p–n junctions for enhanced solar cell and low-power optoelectronic synaptic device for neuromorphic machine vision.

Keywords

ferroelectric p–n junctionreconfigurable rectificationreconfigurable PV effectoptoelectronic synaptic devices

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Nano Research
Volume 14 Issue 11,
November 2021
Pages 4328-4335
DOI: 10.1007/s12274-021-3833-x
Cite this article:
Wang Y, Wang F, Wang Z, et al. Reconfigurable photovoltaic effect for optoelectronic artificial synapse based on ferroelectric p–n junction. Nano Research, 2021, 14(11): 4328-4335. https://doi.org/10.1007/s12274-021-3833-x
Topics:
Semiconductor devices

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Received: 22 May 2021
Revised: 17 August 2021
Accepted: 21 August 2021
Published: 06 September 2021
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021
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