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Research Article

Tuning the crystal structure and optical properties of selective area grown InGaAs nanowires

Zahra Azimi1( ), Aswani Gopakumar1, Amira S. Ameruddin1,2, Li Li3, Thien Truong4, Hieu T. Nguyen4, Hark Hoe Tan1,5, Chennupati Jagadish1,5, Jennifer Wong-Leung1( )
Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra ACT 2601, Australia
Faculty of Applied Science and Technology, Universiti Tun Hussein Onn Malaysia, Batu Pahat 86400, Malaysia
Australian National Fabrication Facility ACT Node, Research School of Physics, The Australian National University, Canberra ACT 2601, Australia
School of Engineering, The Australian National University, Canberra ACT 2601, Australia
Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra ACT 2601, Australia
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Graphical Abstract

Our study shows that highly uniform InGaAs arrays with tunable optical properties can be grown by selective area epitaxy. The effective Ga content in the nanowires can be changed by controlling the growth conditions, enabling the precise tuning of their optical emission over a range of 0.6 eV.

Abstract

Catalyst-free InGaAs nanowires grown by selective area epitaxy are promising building blocks for future optoelectronic devices in the infrared spectral region. Despite progress, the role of pattern geometry and growth parameters on the composition, microstructure, and optical properties of InGaAs nanowires is still unresolved. Here, we present an optimised growth parameter window to achieve highly uniform In1−xGaxAs nanowire arrays on GaAs (111)B substrate over an extensive range of Ga concentrations, from 0.1 to 0.91, by selective-area metal-organic vapor-phase epitaxy. We observe that the Ga content always increases with decreasing In/(Ga+In) precursor ratio and group V flow rate and increasing growth temperature. The increase in Ga content is supported by a blue shift in the photoluminescence peak emission. The geometry of the nanowire arrays also plays an important role in the resulting composition. Notably, increasing the nanowire pitch size from 0.6 to 2 µm in a patterned array shifts the photoluminescence peak emission by up to 120 meV. Irrespective of these growth and geometry parameters, the Ga content determines the crystal structure, resulting in a predominantly wurtzite structure for xGa ≤ 0.3 and a predominantly zinc blende phase for xGa ≥ 0.65. These insights on the factors controlling the composition of InGaAs nanowires grown by a scalable catalyst-free approach provide directions for engineering nanowires as functional components of future optoelectronic devices.

Keywords

InGaAs nanowiresternary semiconductorsselective-area metal-organic vapor-phase epitaxynanostructurepattern geometry

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Nano Research
Volume 15 Issue 4,
April 2022
Pages 3695-3703
DOI: 10.1007/s12274-021-3914-x
Cite this article:
Azimi Z, Gopakumar A, Ameruddin AS, et al. Tuning the crystal structure and optical properties of selective area grown InGaAs nanowires. Nano Research, 2022, 15(4): 3695-3703. https://doi.org/10.1007/s12274-021-3914-x
Topics:
V semiconductors

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Received: 08 August 2021
Revised: 26 September 2021
Accepted: 29 September 2021
Published: 16 November 2021
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021
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