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Research Article

Modulation of electronic state in copper-intercalated 1T-TaS2

Wenhao Zhang1,§, Degong Ding2,§, Jingjing Gao3,§, Kunliang Bu1, Zongxiu Wu1, Li Wang4, Fangsen Li4, Wei Wang3, Xuan Luo3, Wenjian Lu3, Chuanhong Jin2( ), Yuping Sun3,5,6( ), Yi Yin1,6( )
Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
Vacuum Interconnected Nanotech Workstation (Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China
High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

§ Wenhao Zhang, Degong Ding, and Jingjing Gao contributed equally to this work.

Show Author Information

Graphical Abstract

We characterized the structural and electronic modification of 1T-TaS2 after Cu intercalation. Novel spatial electronic distributions have been identified in different domains, demonstrating the enhancement of interaction between the star of Davids (SDs) due to the interlayer Cu atoms.

Abstract

Intercalation is an effective method to modify physical properties and induce novel electronic states of transition metal dichalcogenide (TMD) materials. However, it is difficult to reveal the microscopic electronic state evolution in the intercalated TMDs. Here we successfully synthesize the copper-intercalated 1T-TaS2 and characterize the structural and electronic modification combining resistivity measurements, atomic-resolution scanning transmission electron microscopy (ADF-STEM), and scanning tunneling microscopy (STM). The intercalated Cu atom is determined to be directly below the Ta atom and suppresses the commensurate charge density wave (CCDW) phase. Two specific electronic modulations are discovered in the near-commensurate (NC) CDW phase: the electron doping state near the defective star of Davids (SDs) in metallic domains and the spatial evolution of the Mott gap in insulating domains. Both modulations reveal that intercalated Cu atoms act as a medium to enhance the interaction between intralayer SDs, in addition to the general charge transfer effect. It also solidifies the Mott foundation of the insulating gap in pristine samples. The intriguing electronic evolution in Cu-intercalated 1T-TaS2 will motivate further exploration of novel electronic states in the intercalated TMD materials.

Keywords

intercalationscanning tunneling microscopyMott insulatorcharge transferelectron doping

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Nano Research
Volume 15 Issue 5,
May 2022
Pages 4327-4333
DOI: 10.1007/s12274-021-4034-3
Cite this article:
Zhang W, Ding D, Gao J, et al. Modulation of electronic state in copper-intercalated 1T-TaS2. Nano Research, 2022, 15(5): 4327-4333. https://doi.org/10.1007/s12274-021-4034-3
Topics:
Electrocatalysis

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Received: 09 October 2021
Revised: 15 November 2021
Accepted: 30 November 2021
Published: 15 January 2022
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021
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