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Research Article

Tailoring Bi2Te3 edge with semiconductor and metal properties under electron beam irradiation

Yuting Shen1,2, Hailin Yu1( ), Tao Xu2, Qiubo Zhang2,3, Kuibo Yin2, Shan Cong1, Yushen Liu1, Litao Sun2( )
School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, China
SEU–FEI Nano–Pico Center, Key Lab of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing 210096, China
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
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Graphical Abstract

Electron beam irradiation can be utilized to tailor single-layer Bi2Te3 with semiconducting flat edges and metallic zigzag edges with atomic resolution.

Abstract

In pursuit of miniaturization in the semiconductor industry, two-dimensional (2D) materials are used to fabricate new electronic devices. The topological insulator (TI) material bismuth telluride (Bi2Te3), as an emerging 2D material, has potential applications in electronic and spintronic devices due to its unique electrical properties. It is well known that the surface-to-volume ratio increases as the thickness of the material decreases, resulting in a more prominent edge effect. Therefore, for a single-layer Bi2Te3, the atomic structure of the edge plays a crucial role in its electrical properties. Here, combining first-principles calculations and in situ transmission electron microscopy (TEM) experimental studies, we report that there are two types of edge structures in single-layer Bi2Te3: semiconducting flat edges and metallic zigzag edges. The dynamic evolution process of the edge structure with atomic resolution shows that the proportions of these two edges change with continuous electron beam irradiation. Our findings demonstrate the viability to use electron beam as an effective tool to precisely tailor the edge of Bi2Te3 with desired properties, which paves the way for implementation of single-layer Bi2Te3 in electronics and spintronics.

Keywords

Bi2Te3 edge electron beam irradiationin situ transmission electron microscopy (TEM) atomic precision

Electronic Supplementary Material

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Nano Research
Volume 15 Issue 5,
May 2022
Pages 4710-4716
DOI: 10.1007/s12274-021-4053-0
Cite this article:
Shen Y, Yu H, Xu T, et al. Tailoring Bi2Te3 edge with semiconductor and metal properties under electron beam irradiation. Nano Research, 2022, 15(5): 4710-4716. https://doi.org/10.1007/s12274-021-4053-0
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Received: 31 October 2021
Revised: 02 December 2021
Accepted: 06 December 2021
Published: 08 February 2022
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021
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