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Research Article

Two-dimensional reconfigurable electronics enabled by asymmetric floating gate

Tengyu Jin1,2, Jing Gao2, Yanan Wang2, Yue Zheng2, Shuo Sun2, Lei Liu3, Ming Lin4, Wei Chen1,2,5,6()
Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
Department of Physics, National University of Singapore, Singapore 117542, Singapore
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Institute of Materials Research and Engineering (IMRE), Agency of Science, Technology, and Research (A*STAR), Singapore 138634, Singapore
Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
National University of Singapore (Suzhou) Research Institute, Suzhou 215123, China
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Graphical Abstract

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A reconfigurable WSe2 optoelectronic device is enabled by applying an asymmetric floating gate (AFG) into a flash memory, whose channel can be continuously programmed into p–n or n–n+ homojunctions by the AFG. As a result, a single AFG device can function as a photodiode, a 2-bit memory, or an artificial synapse under different working modes.

Abstract

Reconfigurable devices with customized functionalities hold great potential in addressing the scaling limits of silicon-based field-effect transistors (FETs). The conventional reconfigurable FETs are limited to the applications in logic circuits, and the commonly used multi-gate programming strategies often lead to high power consumption and device complexity. Here, we report a reconfigurable WSe2 optoelectronic device that can function as photodiode, artificial synapse, and 2-bit memory in a single device, enabled by an asymmetric floating gate (AFG) that can continuously program the device into different homojunction modes. The lateral p−n homojunction formed in the AFG device exhibits high-performance self-powered photodetection, with a responsivity over 0.17 A·W−1 and a wide detection spectral range from violet to near-infrared region. The AFG device can also mimic synaptic features of biological synapses and achieve distinct potentiation/depression behaviors under the modulation of both drain-source bias and light illumination. Moreover, when working as a 2-bit memory via the transition between n−n+ and p−n homojunctions, the AFG device shows four distinct conductive states with a high on/off current ratio over 106 and good repeatability. Combining reduced processing complexity and reconfigurable functionalities, the WSe2 AFG devices demonstrate great potential towards high-performance photoelectric interconnected circuits.

Keywords

reconfigurable devicetwo-dimensional (2D) materialshomojunctionphotodiode2-bit memoryartificial synapse

Electronic Supplementary Material

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12274_2022_4070_MOESM1_ESM.pdf (1.4 MB)

References

1

Akinwande, D.; Huyghebaert, C.; Wang, C. H.; Serna, M. I.; Goossens, S.; Li, L. J.; Wong, H. S. P.; Koppens, F. H. L. Graphene and two-dimensional materials for silicon technology. Nature 2019, 573, 507–518.

Crossref Google Scholar
2

Jing, X.; Illarionov, Y.; Yalon, E.; Zhou, P.; Grasser, T.; Shi, Y. Y.; Lanza, M. Engineering field effect transistors with 2D semiconducting channels: Status and prospects. Adv. Funct. Mater. 2020, 30, 1901971.

Crossref Google Scholar
3

Liu, Y. P.; Gao, Y. J.; Zhang, S. Y.; He, J.; Yu, J.; Liu, Z. W. Valleytronics in transition metal dichalcogenides materials. Nano Res. 2019, 12, 2695–2711.

Crossref Google Scholar
4

Iannaccone, G.; Bonaccorso, F.; Colombo, L.; Fiori, G. Quantum engineering of transistors based on 2D materials heterostructures. Nat. Nanotechnol. 2018, 13, 183–191.

Crossref Google Scholar
5

Khan, A. I.; Keshavarzi, A.; Datta, S. The future of ferroelectric field-effect transistor technology. Nat. Electron. 2020, 3, 588–597.

Crossref Google Scholar
6

Liu, X. L.; Hersam, M. C. 2D materials for quantum information science. Nat. Rev. Mater. 2019, 4, 669–684.

Crossref Google Scholar
7

Liu, Y.; Weiss, N. O.; Duan, X. D.; Cheng, H. C.; Huang, Y.; Duan, X. F. Van der Waals heterostructures and devices. Nat. Rev. Mater. 2016, 1, 16042.

Crossref Google Scholar
8

Di, J. Y.; Du, J. H.; Lin, Z. H.; Liu, S. Z.; Ouyang, J. Y.; Chang, J. J. Recent advances in resistive random access memory based on lead halide perovskite. InfoMat 2021, 3, 293–315.

Crossref Google Scholar
9

Jiang, H. J.; Zheng, L.; Liu, Z.; Wang, X. W. Two-dimensional materials: From mechanical properties to flexible mechanical sensors. InfoMat 2020, 2, 1077–1094.

Crossref Google Scholar
10

Park, S. J.; Jeon, D. Y.; Piontek, S.; Grube, M.; Ocker, J.; Sessi, V.; Heinzig, A.; Trommer, J.; Kim, G. T.; Mikolajick, T. et al. Reconfigurable Si nanowire nonvolatile transistors. Adv. Electron. Mater. 2018, 4, 1700399.

Crossref Google Scholar
11

Mikolajick, T.; Heinzig, A.; Trommer, J.; Baldauf, T.; Weber, W. M. The RFET-a reconfigurable nanowire transistor and its application to novel electronic circuits and systems. Semicond. Sci. Technol. 2017, 32, 043001.

Crossref Google Scholar
12

Pan, C.; Wang, C. Y.; Liang, S. J.; Wang, Y.; Cao, T. J.; Wang, P. F.; Wang, C.; Wang, S.; Cheng, B.; Gao, A. Y. et al. Reconfigurable logic and neuromorphic circuits based on electrically tunable two-dimensional homojunctions. Nat. Electron. 2020, 3, 383–390.

Crossref Google Scholar
13

Sutar, S.; Agnihotri, P.; Comfort, E.; Taniguchi, T.; Watanabe, K.; Lee, J. U. Reconfigurable p–n junction diodes and the photovoltaic effect in exfoliated MoS2 films. Appl. Phys. Lett. 2014, 104, 122104.

Crossref Google Scholar
14

Lv, L.; Zhuge, F. W.; Xie, F. J.; Xiong, X. J.; Zhang, Q. F.; Zhang, N.; Huang, Y.; Zhai, T. Y. Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization. Nat. Commun. 2019, 10, 3331.

Crossref Google Scholar
15

Wu, G. J.; Tian, B. B.; Liu, L.; Lv, W.; Wu, S.; Wang, X. D.; Chen, Y.; Li, J. Y.; Wang, Z.; Wu, S. Q. et al. Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains. Nat. Electron. 2020, 3, 43–50.

Crossref Google Scholar
16

Tian, H.; Deng, B. C.; Chin, M. L.; Yan, X. D.; Jiang, H.; Han, S. J.; Sun, V.; Xia, Q. F.; Dubey, M.; Xia, F. N. et al. A dynamically reconfigurable ambipolar black phosphorus memory device. ACS Nano 2016, 10, 10428–10435.

Crossref Google Scholar
17

Hu, Z. H.; Wu, Z. T.; Han, C.; He, J.; Ni, Z. H.; Chen, W. Two-dimensional transition metal dichalcogenides: Interface and defect engineering. Chem. Soc. Rev. 2018, 47, 3100–3128.

Crossref Google Scholar
18

Schulman, D. S.; Arnold, A. J.; Das, S. Contact engineering for 2D materials and devices. Chem. Soc. Rev. 2018, 47, 3037–3058.

Crossref Google Scholar
19

Niu, T. C.; Zhang, J. L.; Chen, W. Surface engineering of two-dimensional materials. Chem. Nano. Mat 2019, 5, 6–23.

Crossref Google Scholar
20

Wang, F. K.; Pei, K.; Li, Y.; Li, H. Q.; Zhai, T. Y. 2D homojunctions for electronics and optoelectronics. Adv. Mater. 2021, 33, 2005303.

Crossref Google Scholar
21

Lee, S. J.; Lin, Z. Y.; Huang, J.; Choi, C. S.; Chen, P.; Liu, Y.; Guo, J.; Jia, C. C.; Wang, Y. L. et al. Programmable devices based on reversible solid-state doping of two-dimensional semiconductors with superionic silver iodide. Nat. Electron. 2020, 3, 630–637.

Crossref Google Scholar
22

Chen, H. W.; Xue, X. Y.; Liu, C. S.; Fang, J. B.; Wang, Z.; Wang, J. L.; Zhang, D. W.; Hu, W. D.; Zhou, P. Logic gates based on neuristors made from two-dimensional materials. Nat. Electron. 2021, 4, 399–404.

Crossref Google Scholar
23

Liu, C. S.; Chen, H. W.; Wang, S. Y.; Liu, Q.; Jiang, Y. G.; Zhang, D. W.; Liu, M.; Zhou, P. Two-dimensional materials for next-generation computing technologies. Nat. Nanotechnol. 2020, 15, 545–557.

Crossref Google Scholar
24

Jin, T. Y.; Zheng, Y.; Gao, J.; Wang, Y. N.; Li, E. L.; Chen, H. P.; Pan, X.; Lin, M.; Chen, W. Controlling native oxidation of HfS2 for 2D materials based flash memory and artificial synapse. ACS Appl. Mater. Interfaces 2021, 13, 10639–10649.

Crossref Google Scholar
25

Vu, Q. A.; Kim, H.; Nguyen, V. L.; Won, U. Y.; Adhikari, S.; Kim, K.; Lee, Y. H.; Yu, W. J. A high-on/off-ratio floating-gate memristor array on a flexible substrate via CVD-grown large-area 2D layer stacking. Adv. Mater. 2017, 29, 1703363.

Crossref Google Scholar
26

Gurram, M.; Omar, S.; Zihlmann, S.; Makk, P.; Li, Q. C.; Zhang, Y. F.; Schönenberger, C.; van Wees, B. J. Spin transport in two-layer-CVD-hBN/graphene/hBN heterostructures. Phys. Rev. B 2018, 97, 045411.

Crossref Google Scholar
27

Dean, C. R.; Young, A. F.; Meric, I.; Lee, C.; Wang, L.; Sorgenfrei, S.; Watanabe, K.; Taniguchi, T.; Kim, P.; Shepard, K. L. et al. Boron nitride substrates for high-quality graphene electronics. Nat. Nanotechnol. 2010, 5, 722–726.

Crossref Google Scholar
28

Lai, S.; Byeon, S.; Jang, S. K.; Lee, J.; Lee, B. H.; Park, J. H.; Kim, Y. H.; Lee, S. HfO2/HfS2 hybrid heterostructure fabricated via controllable chemical conversion of two-dimensional HfS2. Nanoscale 2018, 10, 18758–18766.

Crossref Google Scholar
29

Wen, C.; Banshchikov, A. G.; Illarionov, Y. Y.; Frammelsberger, W.; Knobloch, T.; Hui, F.; Sokolov, N. S.; Grasser, T.; Lanza, M. Dielectric properties of ultrathin CaF2 ionic crystals. Adv. Mater. 2020, 32, 2002525.

Crossref Google Scholar
30

Peimyoo, N.; Barnes, M. D.; Mehew, J. D.; De Sanctis, A.; Amit, I.; Escolar, J.; Anastasiou, K.; Rooney, A. P.; Haigh, S. J.; Russo, S. et al. Laser-writable high-k dielectric for van der Waals nanoelectronics. Sci. Adv. 2019, 5, eaau0906.

Crossref Google Scholar
31

Bertolazzi, S.; Krasnozhon, D.; Kis, A. Nonvolatile memory cells based on MoS2/graphene heterostructures. ACS Nano 2013, 7, 3246–3252.

Crossref Google Scholar
32

Zhang, E. Z.; Wang, W. Y.; Zhang, C.; Jin, Y. B.; Zhu, G. D.; Sun, Q. Q.; Zhang, D. W.; Zhou, P.; Xiu, F. X. Tunable charge-trap memory based on few-layer MoS2. ACS Nano 2015, 9, 612–619.

Crossref Google Scholar
33

Bertolazzi, S.; Bondavalli, P.; Roche, S.; San, T.; Choi, S. Y.; Colombo, L.; Bonaccorso, F.; Samori, P. Nonvolatile memories based on graphene and related 2D materials. Adv. Mater. 2019, 31, 1806663.

Crossref Google Scholar
34

Lei, B.; Zheng, Y.; Hu, Z. H.; Guo, R.; Xiang, D.; Liu, T.; Wang, Y. N.; Lai, M.; He, J.; Chen, W. Nondestructive hole doping enabled photocurrent enhancement of layered tungsten diselenide. 2D Mater. 2019, 6, 024002.

Crossref Google Scholar
35

Lei, B.; Pan, Y. Y.; Hu, Z. H.; Zhang, J. L.; Xiang, D.; Zheng, Y.; Guo, R.; Han, C.; Wang, L. H.; Lu, J. et al. Direct observation of semiconductor-metal phase transition in bilayer tungsten diselenide induced by potassium surface functionalization. ACS Nano 2018, 12, 2070–2077.

Crossref Google Scholar
36

Zhang, Y. W.; Ma, K. K.; Zhao, C.; Hong, W.; Nie, C. J.; Qiu, Z. J.; Wang, S. An ultrafast WSe2 photodiode based on a lateral p-i-n homojunction. ACS Nano 2021, 15, 4405–4415.

Crossref Google Scholar
37

Han, C.; Hu, Z. H.; Gomes, L. C.; Bao, Y.; Carvalho, A.; Tan, S. J. R.; Lei, B.; Xiang, D.; Wu, J.; Qi, D. Y. et al. Surface functionalization of black phosphorus via potassium toward high-performance complementary devices. Nano Lett. 2017, 17, 4122–4129.

Crossref Google Scholar
38

Zhu, C. G.; Sun, X. X.; Liu, H. W.; Zheng, B. Y.; Wang, X. W.; Liu, Y.; Zubair, M.; Wang, X.; Zhu, X. L.; Li, D. et al. Nonvolatile MoTe2 p–n diodes for optoelectronic logics. ACS Nano 2019, 13, 7216–7222.

Crossref Google Scholar
39

Mak, K. F.; Shan, J. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides. Nat. Photon. 2016, 10, 216–226.

Crossref Google Scholar
40

Bao, C. X.; Chen, Z. L.; Fang, Y. J.; Wei, H. T.; Deng, Y. H.; Xiao, X.; Li, L. L.; Huang, J. S. Low-noise and large-linear-dynamic-range photodetectors based on hybrid-perovskite thin-single-crystals. Adv. Mater. 2017, 29, 1703209.

Crossref Google Scholar
41

Cuce, E.; Cuce, P. M.; Bali, T. An experimental analysis of illumination intensity and temperature dependency of photovoltaic cell parameters. Appl. Energy 2013, 111, 374–382.

Crossref Google Scholar
42

Singh, P.; Ravindra, N. M. Temperature dependence of solar cell performance—An analysis. Sol. Energy Mater. Sol. Cells 2012, 101, 36–45.

Crossref Google Scholar
43

Chai, Y. In-sensor computing for machine vision. Nature 2020, 579, 32–33.

Crossref Google Scholar
44

Zhou, F. C.; Zhou, Z.; Chen, J. W.; Choy, T. H.; Wang, J. L.; Zhang, N.; Lin, Z. Y.; Yu, S. M.; Kang, J. F.; Wong, H. S. P. et al. Optoelectronic resistive random access memory for neuromorphic vision sensors. Nat. Nanotechnol. 2019, 14, 776–782.

Crossref Google Scholar
45

Zhou, F. C.; Chai, Y. Near-sensor and in-sensor computing. Nat. Electron. 2020, 3, 664–671.

Crossref Google Scholar
46

Xia, Q. F.; Yang, J. J. Memristive crossbar arrays for brain-inspired computing. Nat. Mater. 2019, 18, 309–323.

Crossref Google Scholar
47

Sangwan, V. K.; Hersam, M. C. Neuromorphic nanoelectronic materials. Nat. Nanotechnol. 2020, 15, 517–528.

Crossref Google Scholar
48

Pan, X.; Jin, T. Y.; Gao, J.; Han, C.; Shi, Y. M.; Chen, W. Stimuli-enabled artificial synapses for neuromorphic perception: Progress and perspectives. Small 2020, 16, 2001504.

Crossref Google Scholar
49

Wang, Y. N.; Zheng, Y.; Gao, J.; Jin, T. Y.; Li, E. L.; Lian, X.; Pan, X.; Han, C.; Chen, H. P.; Chen, W. Band-tailored van der Waals heterostructure for multilevel memory and artificial synapse. InfoMat 2021, 3, 917–928.

Crossref Google Scholar
50

Zhang, J. Y.; Shi, Q. Q.; Wang, R. Z.; Zhang, X.; Li, L.; Zhang, J. H.; Tian, L.; Xiong, L. Z.; Huang, J. Spectrum-dependent photonic synapses based on 2D imine polymers for power-efficient neuromorphic computing. InfoMat 2021, 3, 904–916.

Crossref Google Scholar
51

Citri, A.; Malenka, R. C. Synaptic plasticity: Multiple forms, functions, and mechanisms. Neuropsychopharmacology 2008, 33, 18–41.

Crossref Google Scholar
52

Lee, Y.; Lee, T. W. Organic synapses for neuromorphic electronics: From brain-inspired computing to sensorimotor nervetronics. Acc. Chem. Res. 2019, 52, 964–974.

Crossref Google Scholar
53

Seo, S.; Kang, B. S.; Lee, J. J.; Ryu, H. J.; Kim, S.; Kim, H.; Oh, S. et al. Artificial van der Waals hybrid synapse and its application to acoustic pattern recognition. Nat. Commun. 2020, 11, 3936.

Crossref Google Scholar
54

Yang, C. S.; Shang, D. S.; Liu, N.; Fuller, E. J.; Agrawal, S.; Talin, A. A.; Li, Y. Q.; Shen, B. G.; Sun, Y. All-solid-state synaptic transistor with ultralow conductance for neuromorphic computing. Adv. Funct. Mater. 2018, 28, 1804170.

Crossref Google Scholar
55

Zucker, R. S.; Regehr, W. G. Short-term synaptic plasticity. Annu. Rev. Physiol. 2002, 64, 355–405.

Crossref Google Scholar
56

Yang, X.; Chen, A. B. K.; Joon Choi, B.; Chen, I. W. Demonstration and modeling of multi-bit resistance random access memory. Appl. Phys. Lett. 2013, 102, 043502.

Crossref Google Scholar
57

Chen, Y. Q.; Yu, J.; Zhuge, F. W.; He, Y. H.; Zhang, Q. F.; Yu, S. W.; Liu, K. L.; Li, L.; Ma, Y.; Zhai, T. Y. An asymmetric hot carrier tunneling van der Waals heterostructure for multibit optoelectronic memory. Mater. Horiz. 2020, 7, 1331–1340.

Crossref Google Scholar
58

Han, S. T.; Zhou, Y.; Chen, B.; Zhou, L.; Yan, Y.; Zhang, H.; Roy, V. A. L. Two-dimensional molybdenum disulphide nanosheet-covered metal nanoparticle array as a floating gate in multi-functional flash memories. Nanoscale 2015, 7, 17496–17503.

Crossref Google Scholar
59

Lyu, B. Z.; Choi, Y.; Jing, H. Y.; Qian, C.; Kang, H.; Lee, S.; Cho, J. H. 2D MXene-TiO2 core-shell nanosheets as a data-storage medium in memory devices. Adv. Mater. 2020, 32, 1907633.

Crossref Google Scholar
60

Zhang, Z. H.; Wang, Z. W.; Shi, T.; Bi, C.; Rao, F.; Cai, Y. M.; Liu, Q.; Wu, H. Q.; Zhou, P. Memory materials and devices: From concept to application. InfoMat 2020, 2, 261–290.

Crossref Google Scholar
Nano Research
Volume 15 Issue 5,
May 2022
Pages 4439-4447
DOI: 10.1007/s12274-022-4070-7
Cite this article:
Jin T, Gao J, Wang Y, et al. Two-dimensional reconfigurable electronics enabled by asymmetric floating gate. Nano Research, 2022, 15(5): 4439-4447. https://doi.org/10.1007/s12274-022-4070-7
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