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Research Article

Anisotropic electrical properties of aligned PtSe2 nanoribbon arrays grown by a pre-patterned selective selenization process

Huaipeng Wang1,§, Zhifang Liu2,§, Yilin Sun3( ), Xiaofan Ping2, Jianlong Xu4, Yingtao Ding3, Haowen Hu5, Dan Xie1( ), Tianling Ren1( )
School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
Department of Chemistry, Tsinghua University, Beijing 100084, China
School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, China
State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China

§ Huaipeng Wang and Zhifang Liu contributed equally to this work.

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Graphical Abstract

Anisotropic electrical properties of naturally aligned zigzag PtSe2 nanoribbon arrays was investigated through angle-resolved polarized Raman spectroscopy and electrical measurements. The underlying mechanism of its selective growth and anisotropic conductivities are revealed using density functional theory and semi-classic Boltzmann transport theory.

Abstract

This study proposes a feasible and scalable production strategy to naturally obtain aligned platinum diselenide (PtSe2) nanoribbon arrays with anisotropic conductivity. The anisotropic properties of two-dimensional (2D) materials, especially transition-metal dichalcogenides (TMDs), have attracted great interest in research. The dependence of physical properties on their lattice orientations is of particular interest because of its potential in diverse applications, such as nanoelectronics and optoelectronics. One-dimensional (1D) nanostructures facilitate many feasible production strategies for shaping 2D materials into unidirectional 1D nanostructures, providing methods to investigate the anisotropic properties of 2D materials based on their lattice orientations and dimensionality. The natural alignment of zigzag (ZZ) PtSe2 nanoribbons is experimentally demonstrated using angle-resolved polarized Raman spectroscopy (ARPRS), and the selective growth mechanism is further theoretically revealed by comparing edges and edge energies of different orientations using the density functional theory (DFT). Back-gate field-effect transistors (FETs) are also constructed of unidirectional PtSe2 nanoribbons to investigate their anisotropic electrical properties, which align with the results of the projected density of states (DOS) calculations. This work provides new insight into the anisotropic properties of 2D materials and a feasible investigation strategy from experimental and theoretical perspectives.

Keywords

PtSe2scalable productionanisotropic propertiesnanoribbonsdensity functional theory

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Nano Research
Volume 15 Issue 5,
May 2022
Pages 4668-4676
DOI: 10.1007/s12274-022-4110-3
Cite this article:
Wang H, Liu Z, Sun Y, et al. Anisotropic electrical properties of aligned PtSe2 nanoribbon arrays grown by a pre-patterned selective selenization process. Nano Research, 2022, 15(5): 4668-4676. https://doi.org/10.1007/s12274-022-4110-3
Topics:
Semiconductors

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Received: 15 November 2021
Revised: 17 December 2021
Accepted: 23 December 2021
Published: 24 February 2022
© Tsinghua University Press 2022
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