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Research Article

Dual strategy of modulating growth temperature and inserting ultrathin barrier to enhance the wave function overlap in type-II superlattices

Yuyang Wu1, Yahui Zhang1, Yi Zhang2, Yunhao Zhao1, Yu Zhang2, Yingqiang Xu2, Chongyun Liang1, Zhichuan Niu2, Yi Shi3, Renchao Che1,4( )
Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Department of Materials Science, Fudan University, Shanghai 200438, China
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative, Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Joint-Research Center for Computational Materials, Zhejiang Laboratory, Hangzhou 311100, China
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Graphical Abstract

The electron–hole wave function overlap (WFO) in InAs/AlSb type-Ⅱ superlattices has been enhancedin two different ways. First, adjusting the growth temperature to 470 ℃ induces the atom exchange atthe AlSb-on-InAs interface, which improves the WFO at the InAs-on-AlSb interface. Then byinserting ultrathin AlAs layers into AlSb layers, the hole wave functions in AlSb layers are squeezedto the sides, further enhancing the WFO.

Abstract

Maximizing wave function overlap (WFO) within type-II superlattices (T2SL) is demonstrated to be important for improving their photoelectric properties, such as optical transition strength and quantum efficiency, which, however, remains a great challenge for now. Herein, the dual strategy of modulating growth temperature and inserting ultrathin AlAs barrier into the AlSb layers is presented to enhance the WFO in InAs/AlSb T2SL. The charge distributions and strain states indicate that moderate growth temperature of 470 °C promotes the As–Sb exchange at AlSb-on-InAs (AOI) interfaces, which would introduce skew of energy band structure towards InAs-on-AlSb (IOA) interface. Such band structure could drive electrons and holes to the IOA interfaces simultaneously, thus resulting in the enhanced WFO. On this basis, insertion of relatively thick (0.3 nm) AlAs layers is found to squeeze more holes towards adjacent interfaces, boosting the WFO further. The InAs/AlSb superlattices with optimized WFO reveal better optical performance, where the peak intensity shows 50% improvement in the PL spectra than the original one. Moreover, a dual-miniband radiative transition mechanism appears in the InAs/AlSb superlattice with relatively thick AlAs intercalation, which helps broaden the wavelength range of the superlattice.

Keywords

wave function overlaptype-II superlatticesphotoelectric propertiescharge distributionenergy band alignment

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Nano Research
Volume 15 Issue 6,
June 2022
Pages 5626-5632
DOI: 10.1007/s12274-022-4151-7
Cite this article:
Wu Y, Zhang Y, Zhang Y, et al. Dual strategy of modulating growth temperature and inserting ultrathin barrier to enhance the wave function overlap in type-II superlattices. Nano Research, 2022, 15(6): 5626-5632. https://doi.org/10.1007/s12274-022-4151-7
Topics:
Semiconductors

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Received: 02 December 2021
Revised: 04 January 2022
Accepted: 11 January 2022
Published: 19 March 2022
© Tsinghua University Press 2022
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