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Research Article

Phase/size dual controlled 2D semiconductor In2X3 (X = S, Se, Te) for saturable absorption modulation

Weibiao Wang1,2,§, Zhexue Chen1,2,§, Xinyu Sui2,3,§, Yueqi Li1,2, Xinfeng Liu2,3( ), Yong Zhang1,2( )
CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
University of Chinese Academy of Sciences, Beijing 100049, China
CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China

§ Weibiao Wang, Zhexue Chen, and Xinyu Sui contributed equally to this work.

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Graphical Abstract

Two-dimensional semiconductor In2X3 (X = S, Se, Te) with well-controlled phase/size demonstrates broad and precise modulation of their nonlinear saturable absorption.

Abstract

The production of two-dimensional nanosheets (2D NSs) with all sizes (1–100 nm) and few (< 10) layers is highly desired but far from satisfactory. Herein, we report an all-physical top-down method to produce indium chalcogenide (In2X3 (X = S, Se, Te)) NSs with wide-range (150–3.0 nm) controlled sizes. The method combines silica-assisted ball-milling and sonication-assisted solvent exfoliation to fabricate multiscale NSs with varying distributions, which are then precisely separated by cascade centrifugation. Multiple characterization techniques reveal that the as-produced In2X3 NSs are intrinsic and defect-free and remain β-phase during the whole process. The redispersions of In2X3 NSs exhibit prominent excitation wavelength-, solvent-, concentration-, and size-dependent photoluminescence. The NSs-poly(methyl methacrylate) (PMMA) hybrid thin films demonstrate strong size effects in nonlinear saturation absorption. The absolute modulation depths of 35.4%, 43.3%, 47.2% and saturation intensities of 1.63, 1.05, 0.83 MW·cm−2 (i.e., 163, 105, and 83 nJ·cm−2) are derived for the In2S3, In2Se3, and In2Te3 quantum sheets, respectively. Our method paves the way for mass production and full exploration of full-scale 2D NSs.

Keywords

semiconductorquantum sheetsintrinsicphotoluminescencenonlinear saturation absorption

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Nano Research
Volume 15 Issue 6,
June 2022
Pages 5633-5639
DOI: 10.1007/s12274-022-4171-3
Cite this article:
Wang W, Chen Z, Sui X, et al. Phase/size dual controlled 2D semiconductor In2X3 (X = S, Se, Te) for saturable absorption modulation. Nano Research, 2022, 15(6): 5633-5639. https://doi.org/10.1007/s12274-022-4171-3
Topics:
Semiconductors

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Received: 22 November 2021
Revised: 15 January 2022
Accepted: 19 January 2022
Published: 28 March 2022
© Tsinghua University Press 2022
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