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Research Article

Alloy-buffer-controlled van der Waals epitaxial growth of aligned tellurene

Cong Wang1,2, Chao Xu1, Xuyun Guo1, Ning Zhang1,2, Jianmin Yan1,2, Jiewei Chen1,2, Wei Yu1, Jing-Kai Qin3, Ye Zhu1, Lain-Jong Li4, Yang Chai1,2( )
Department of Applied Physics, the Hong Kong Polytechnic University, Hong Kong 999077, China
The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, China
School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
Department of Mechanical Engineering, the University of Hong Kong, Hong Kong 999077, China
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Graphical Abstract

In this manuscript, we demonstrate an interesting chemical vapor deposition (CVD) method growththat we use alloy-buffer intermediate source to grow high aligned single-crystalline two-dimensional(2D) tellurene (Te) on mica substrate. The formation of Cu-Te alloy effectively promotes 2D Tegrowth uniformly, alleviating non-uniform spatial distribution. The insulating hexagonal micasubstrate enables high aligned growth of 2D Te.

Abstract

Group-VI elemental two-dimensional (2D) materials (e.g., tellurene (Te)) have unique crystalline structures and extraordinarily physical properties. However, it still remains a great challenge to controllably grow 2D Te with good repeatability, uniformity, and highly aligned orientation using vapor growth method. Here, we design a Cu foil-assisted alloy-buffer-controlled growth method to epitaxially grow aligned single-crystalline 2D Te on an insulating mica substrate. The in-situ formation of Cu-Te alloy plays a key role on 2D Te growth, alleviating the spatial and temporal non-uniformity of precursor in conventional vapor deposition process. Through transmission electron microscopy (TEM) analysis combined with theoretical calculations, we unveil that the alignment growth of Te in the [110] direction is along the [600] direction of mica, owing to the small lattice mismatch (0.15%) and strong binding strength. This work presents a method to grow aligned high-quality 2D Te in a controllable manner.

Keywords

two-dimensional materialstellurenevan der Waals interactionepitaxy growthaligned growth

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Nano Research
Volume 15 Issue 6,
June 2022
Pages 5712-5718
DOI: 10.1007/s12274-022-4188-7
Cite this article:
Wang C, Xu C, Guo X, et al. Alloy-buffer-controlled van der Waals epitaxial growth of aligned tellurene. Nano Research, 2022, 15(6): 5712-5718. https://doi.org/10.1007/s12274-022-4188-7
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Received: 20 December 2021
Revised: 22 January 2022
Accepted: 24 January 2022
Published: 21 March 2022
© Tsinghua University Press 2022
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