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Research Article

Epitaxial growth of large area ZrS2 2D semiconductor films on sapphire for optoelectronics

Yan Tian1,2, Yong Cheng1,2, Jidong Huang1,2, Siyu Zhang1,2, Hao Dong1,2, Gaokai Wang1,2, Jingren Chen1,2, Jinliang Wu1,2, Zhigang Yin1,2( ), Xingwang Zhang1,2 ( )
Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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Graphical Abstract

The high quality large-area uniform ZrS2 films are epitaxially grown on c-plane sapphire by chemical vapor deposition due to the supercell matching. The epitaxial ZrS2 film exhibits n-type semiconductor behavior with a room temperature mobility of 2.4 cm2·V−1·s−1, mainly limited by optical phonon scattering. The ZrS2 photodetectors exhibit excellent performance with a light on/off ratio of 106 and a specific detectivity of 2.6 × 1012 Jones.

Abstract

Recently, group-IVB semiconducting transition metal dichalcogenides (TMDs) of ZrS2 have attracted significant research interest due to its layered nature, moderate band gap, and extraordinary physical properties. Most device applications require a deposition of high quality large-area uniform ZrS2 single crystalline films, which has not yet been achieved. In this work, for the first time, we demonstrate the epitaxial growth of high quality large-area uniform ZrS2 films on c-plane sapphire substrates by chemical vapor deposition. An atomically sharp interface is observed due to the supercell matching between ZrS2 and sapphire, and their epitaxial relationship is found to be ZrS2 (0001)[ 101¯0]||Al2O3 (0001)[ 112¯0]. The epitaxial ZrS2 film exhibits n-type semiconductor behavior with a room temperature mobility of 2.4 cm2·V−1·s−1, and the optical phonon is the dominant scattering mechanism at room temperature or above. Furthermore, the optoelectronic applications of ZrS2 films are demonstrated by fabricating photodetector devices. The ZrS2 photodetectors exhibit the excellent comprehensive performance, such as a light on/off ratio of 106 and a specific detectivity of 2.6 × 1012 Jones, which are the highest values compared with the photodetectors based on other group-IVB two-dimensional TMDs.

Keywords

ZrS2epitaxial growthscattering mechanismphotodetectorstransition metal dichalcogenides

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Nano Research
Volume 15 Issue 7,
July 2022
Pages 6628-6635
DOI: 10.1007/s12274-022-4308-4
Cite this article:
Tian Y, Cheng Y, Huang J, et al. Epitaxial growth of large area ZrS2 2D semiconductor films on sapphire for optoelectronics. Nano Research, 2022, 15(7): 6628-6635. https://doi.org/10.1007/s12274-022-4308-4
Topics:
Layered semiconductors

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Received: 01 January 2022
Revised: 09 March 2022
Accepted: 09 March 2022
Published: 23 April 2022
© Tsinghua University Press 2022
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