AI Chat Paper
Note: Please note that the following content is generated by AMiner AI. SciOpen does not take any responsibility related to this content.
{{lang === 'zh_CN' ? '文章概述' : 'Summary'}}
{{lang === 'en_US' ? '中' : 'Eng'}}
Chat more with AI
Powered by AMiner. Clicking this button will take you away from SciOpen.
Home Nano Research Article
Article Link
Cite
EndNote(RIS) BibTeX
Collect
Submit Manuscript
Show Outline
Outline
Show full outline
Hide outline
Outline
Show full outline
Hide outline
Research Article

Highly in-plane anisotropy of thermal transport in suspended ternary chalcogenide Ta2NiS5

Yue Su1,2,§, Chuyun Deng2,§, Jinxin Liu1,2, Xiaoming Zheng1,2, Yuehua Wei3, Yangbo Chen1, Wei Yu6, Xiao Guo5, Weiwei Cai1,4, Gang Peng2, Han Huang5, Xueao Zhang1,4( )
College of Physical Science and Technology, Xiamen University, Xiamen 361005, China
College of Arts and Sciences, National University of Defense Technology, Changsha 410073, China
College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
Jiujiang Research Institute of Xiamen University, Jiujiang 332105, China
Hunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

§ Yue Su and Chuyun Deng contributed equally to this work.

Show Author Information

Graphical Abstract

Here the in-plane thermal conductivity of few-layer Ta2NiS5 is investigated through Raman thermometry. The measured Raman modes and thermal conductivities show strong anisotropy and obvious thickness-dependence for few-layer Ta2NiS5 flakes, which probably come from longer phonon mean free path and weaker phonon boundary scattering in armchair direction. Such anisotropic property might enable heat flow manipulation in Ta2NiS5 based devices to improve thermal management and device performance.

Abstract

Energy dissipation has always been an attention-getting issue in modern electronics and the emerging low-symmetry two-dimensional (2D) materials are considered to have broad prospects in solving the energy dissipation problem. Herein the thermal transport of a typical 2D ternary chalcogenide Ta2NiS5 is investigated. For the first time we have observed strongly anisotropic in-plane thermal conductivity towards armchair and zigzag axes of suspended few-layer Ta2NiS5 flakes through Raman thermometry. For 7-nm-thick Ta2NiS5 flakes, the κzigzag is 4.76 W·m−1·K−1 and κarmchair is 7.79 W·m−1·K−1, with a large anisotropic ratio ( κarmchair/κzigzag) of 1.64 mainly ascribed to different phonon mean-free-paths along armchair and zigzag axes. Moreover, the thickness dependence of thermal anisotropy is also discussed. As the flake thickness increases, the κarmchair/κzigzag reduces sharply from 1.64 to 1.07. This could be attributed to the diversity in phonon boundary scattering, which decreases faster in zigzag direction than in armchair direction. Such anisotropic property enables heat flow manipulation in Ta2NiS5 based devices to improve thermal management and device performance. Our work helps reveal the anisotropy physics of ternary transition metal chalcogenides, along with significant guidance to develop energy-efficient next generation nanodevices.

Keywords

anisotropic thermal conductivityternary transition metal chalcogenideTa2NiS5energy dissipationphonon mode

Electronic Supplementary Material

Download File(s)
12274_2022_4317_MOESM1_ESM.pdf (1.4 MB)

References

1

Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric field effect in atomically thin carbon films. Science 2004, 306, 666–669.
Crossref Google Scholar
2

Liu, E. F.; Fu, Y. J.; Wang, Y. J.; Feng, Y. Q.; Liu, H. M.; Wan, X. G.; Zhou, W.; Wang, B. G.; Shao, L. B.; Ho, C. H. et al. Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors. Nat. Commun. 2015, 6, 6991.
Crossref Google Scholar
3

Heremans, J. P.; Dresselhaus, M. S.; Bell, L. E.; Morelli, D. T. When thermoelectrics reached the nanoscale. Nat. Nanotechnol. 2013, 8, 471–473.
Crossref Google Scholar
4

Li, L.; Wang, W. K.; Gan, L.; Zhou, N.; Zhu, X. D.; Zhang, Q.; Li, H. Q.; Tian, M. L.; Zhai, T. Y. Ternary Ta2NiSe5 flakes for a high-performance infrared photodetector. Adv. Funct. Mater. 2016, 26, 8281–8289.
Crossref Google Scholar
5

Tan, C. L.; Yu, P.; Hu, Y. L.; Chen, J. Z.; Huang, Y.; Cai, Y. Q.; Luo, Z. M.; Li, B.; Lu, Q. P.; Wang, L. H. et al. High-yield exfoliation of ultrathin two-dimensional ternary chalcogenide nanosheets for highly sensitive and selective fluorescence DNA sensors. J. Am. Chem. Soc. 2015, 137, 10430–10436.
Crossref Google Scholar
6

Luo, Z.; Maassen, J.; Deng, Y. X.; Du, Y. C.; Garrelts, R. P.; Lundstrom, M. S.; Ye, P. D.; Xu, X. F. Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus. Nat. Commun. 2015, 6, 8572.
Crossref Google Scholar
7

Xia, F. N.; Wang, H.; Jia, Y. C. Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics. Nat. Commun. 2014, 5, 4458.
Crossref Google Scholar
8

Wang, X. M.; Jones, A. M.; Seyler, K. L.; Tran, V.; Jia, Y. C.; Zhao, H.; Wang, H.; Yang, L.; Xu, X. D.; Xia, F. N. Highly anisotropic and robust excitons in monolayer black phosphorus. Nat. Nanotechnol. 2015, 10, 517–521.
Crossref Google Scholar
9

Ribeiro, H. B.; Pimenta, M. A.; de Matos, C. J. S.; Moreira, R. L.; Rodin, A. S.; Zapata, J. D.; de Souza, E. A. T.; Castro Neto, A. H. Unusual angular dependence of the Raman response in black phosphorus. ACS Nano 2015, 9, 4270–4276.
Crossref Google Scholar
10

Zhang, E. Z.; Wang, P.; Li, Z.; Wang, H. F.; Song, C. Y.; Huang, C.; Chen, Z. G.; Yang, L.; Zhang, K. T.; Lu, S. H. et al. Tunable ambipolar polarization-sensitive photodetectors based on high-anisotropy ReSe2 nanosheets. ACS Nano 2016, 10, 8067–8077.
Crossref Google Scholar
11

Chen, Y. C.; Deng, C. Y.; Wei, Y. H.; Liu, J. X.; Su, Y.; Xie, S. Y.; Cai, W. W.; Peng, G.; Huang, H.; Dai, M. Y. et al. Thickness dependent anisotropy of in-plane Raman modes under different temperatures in supported few-layer WTe2. Appl. Phys. Lett. 2021, 119, 063104.
Crossref Google Scholar
12

Wei, Y. H.; Deng, C. Y.; Zheng, X. M.; Chen, Y. B.; Zhang, X. Z.; Luo, W.; Zhang, Y.; Peng, G.; Liu, J. X.; Huang, H. et al. Anisotropic in-plane thermal conductivity for multi-layer WTe2. Nano Res. 2022, 15, 401–407.
Crossref Google Scholar
13

Wang, H. W.; Chen, M. L.; Zhu, M. J.; Wang, Y. N.; Dong, B. J.; Sun, X. D.; Zhang, X. R.; Cao, S. M.; Li, X. X.; Huang, J. Q. et al. Gate tunable giant anisotropic resistance in ultra-thin GaTe. Nat. Commun. 2019, 10, 2302.
Crossref Google Scholar
14

Li, L.; Gong, P. L.; Wang, W. K.; Deng, B.; Pi, L. J.; Yu, J.; Zhou, X.; Shi, X. Q.; Li, H. Q.; Zhai, T. Y. Strong in-plane anisotropies of optical and electrical response in layered dimetal chalcogenide. ACS Nano 2017, 11, 10264–10272.
Crossref Google Scholar
15

Qiu, G.; Du, Y. C.; Charnas, A.; Zhou, H.; Jin, S. Y.; Luo, Z.; Zemlyanov, D. Y.; Xu, X. F.; Cheng, G. J.; Ye, P. D. Observation of optical and electrical in-plane anisotropy in high-mobility few-layer ZrTe5. Nano Lett. 2016, 16, 7364–7369.
Crossref Google Scholar
16

Xu, X. L.; Song, Q. J.; Wang, H. F.; Li, P.; Zhang, K.; Wang, Y. L.; Yuan, K.; Yang, Z. C.; Ye, Y.; Dai, L. In-plane anisotropies of polarized Raman response and electrical conductivity in layered Tin selenide. ACS Appl. Mater. Interfaces 2017, 9, 12601–12607.
Crossref Google Scholar
17

Zhao, L. D.; Lo, S. H.; Zhang, Y. S.; Sun, H.; Tan, G. J.; Uher, C.; Wolverton, C.; Dravid, V. P.; Kanatzidis, M. G. Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals. Nature 2014, 508, 373–377.
Crossref Google Scholar
18

Tian, H.; Guo, Q. S.; Xie, Y. J.; Zhao, H.; Li, C.; Cha, J. J.; Xia, F. N.; Wang, H. Anisotropic black phosphorus synaptic device for neuromorphic applications. Adv. Mater. 2016, 28, 4991–4997.
Crossref Google Scholar
19

Chen, Y.; Peng, B.; Cong, C. X.; Shang, J. Z.; Wu, L. S.; Yang, W. H.; Zhou, J. D.; Yu, P.; Zhang, H. B.; Wang, Y. L. et al. In-plane anisotropic thermal conductivity of few-layered transition metal dichalcogenide Td-WTe2. Adv. Mater. 2019, 31, 1804979.
Crossref Google Scholar
20

Desai, S. B.; Madhvapathy, S. R.; Sachid, A. B.; Llinas, J. P.; Wang, Q. X.; Ahn, G. H.; Pitner, G.; Kim, M. J.; Bokor, J.; Hu, C. M. et al. MoS2 transistors with 1-nanometer gate lengths. Science 2016, 354, 99–102.
Crossref Google Scholar
21

Liu, W.; Kang, J. H.; Sarkar, D.; Khatami, Y.; Jena, D.; Banerjee, K. Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors. Nano Lett. 2013, 13, 1983–1990.
Crossref Google Scholar
22

Wei, Y. H.; Zhang, R. Y.; Zhang, Y.; Zheng, X. M.; Cai, W. W.; Ge, Q.; Novoselov, K. S.; Xu, Z. J.; Jiang, T.; Deng, C. Y. et al. Thickness-independent energy dissipation in graphene electronics. ACS Appl. Mater. Interfaces 2020, 12, 17706–17712.
Crossref Google Scholar
23

Li, M.; Kang, J. S.; Nguyen, H. D.; Wu, H.; Aoki, T.; Hu, Y. J. Anisotropic thermal boundary Resistance across 2D black phosphorus: Experiment and atomistic modeling of interfacial energy transport. Adv. Mater. 2019, 31, 1901021.
Crossref Google Scholar
24

Di Salvo, F. J.; Chen, C. H.; Fleming, R. M.; Waszczak, J. V.; Dunn, R. G.; Sunshine, S. A.; Ibers, J. A. Physical and structural properties of the new layered compounds Ta2NiS5 and Ta2NiSe5. J. Less Common Met. 1986, 116, 51–61.
Crossref Google Scholar
25

Sunshine, S. A.; Ibers, J. A. Structure and physical properties of the new layered ternary chalcogenides tantalum nickel sulfide (Ta2NiS5) and tantalum nickel selenide (Ta2NiSe5). Inorg. Chem. 1985, 24, 3611–3614.
Crossref Google Scholar
26

Ling, X.; Huang, S. X.; Hasdeo, E. H.; Liang, L. B.; Parkin, W. M.; Tatsumi, Y.; Nugraha, A. R. T.; Puretzky, A. A.; Das, P. M.; Sumpter, B. G. et al. Anisotropic electron–photon and electron–phonon interactions in black phosphorus. Nano Lett. 2016, 16, 2260–2267.
Crossref Google Scholar
27

Calizo, I.; Balandin, A. A.; Bao, W.; Miao, F.; Lau, C. N. Temperature dependence of the Raman spectra of graphene and graphene multilayers. Nano Lett. 2007, 7, 2645–2649.
Crossref Google Scholar
28

Luo, S. W.; Qi, X.; Yao, H.; Ren, X. H.; Chen, Q.; Zhong, J. X. Temperature-dependent Raman responses of the vapor-deposited tin selenide ultrathin flakes. J. Phys. Chem. C 2017, 121, 4674–4679.
Crossref Google Scholar
29

Balandin, A. A.; Ghosh, S.; Bao, W. Z.; Calizo, I.; Teweldebrhan, D.; Miao, F.; Lau, C. N. Superior thermal conductivity of single-layer graphene. Nano Lett. 2008, 8, 902–907.
Crossref Google Scholar
30

Najmaei, S.; Liu, Z.; Ajayan, P. M.; Lou, J. Thermal effects on the characteristic Raman spectrum of molybdenum disulfide (MoS2) of varying thicknesses. Appl. Phys. Lett. 2012, 100, 013106.
Crossref Google Scholar
31

Yan, R. S.; Simpson, J. R.; Bertolazzi, S.; Brivio, J.; Watson, M.; Wu, X. F.; Kis, A.; Luo, T. F.; Hight Walker, A. R.; Xing, H. G. Thermal conductivity of monolayer molybdenum disulfide obtained from temperature-dependent Raman spectroscopy. ACS Nano 2014, 8, 986–993.
Crossref Google Scholar
32

Low, T.; Rodin, A. S.; Carvalho, A.; Jiang, Y. J.; Wang, H.; Xia, F. N.; Castro Neto, A. H. Tunable optical properties of multilayer black phosphorus thin films. Phys. Rev. B 2014, 90, 075434.
Crossref Google Scholar
33

Pettes, M. T.; Maassen, J.; Jo, I.; Lundstrom, M. S.; Shi, L. Effects of surface band bending and scattering on thermoelectric transport in suspended bismuth telluride nanoplates. Nano Lett. 2013, 13, 5316–5322.
Crossref Google Scholar
34

Carrete, J.; Vermeersch, B.; Katre, A.; van Roekeghem, A.; Wang, T.; Madsen, G. K. H.; Mingo, N. almaBTE: A solver of the space–time dependent Boltzmann transport equation for phonons in structured materials. Comput. Phys. Commun. 2017, 220, 351–362.
Crossref Google Scholar
35

Ziambaras, E.; Hyldgaard, P. Phonon Knudsen flow in nanostructured semiconductor systems. J. Appl. Phys. 2006, 99, 054303.
Crossref Google Scholar
36

Smith, B.; Vermeersch, B.; Carrete, J.; Ou, E.; Kim, J.; Mingo, N.; Akinwande, D.; Shi, L. Temperature and thickness dependences of the anisotropic in-plane thermal conductivity of black phosphorus. Adv. Mater. 2017, 29, 1603756.
Crossref Google Scholar
37

Xiao, P.; Chavez-Angel, E.; Chaitoglou, S.; Sledzinska, M.; Dimoulas, A.; Sotomayor Torres, C. M.; El Sachat, A. Anisotropic thermal conductivity of crystalline layered SnSe2. Nano Lett. 2021, 21, 9172–9179.
Crossref Google Scholar
38

Qiao, J.; Feng, F.; Wang, Z. M.; Shen, M. Y.; Zhang, G. P.; Yuan, X. C.; Somekh, M. G. Highly in-plane anisotropic two-dimensional ternary Ta2NiSe5 for polarization-sensitive photodetectors. ACS Appl. Mater. Interfaces 2021, 13, 17948–17956.
Crossref Google Scholar
Nano Research
Volume 15 Issue 7,
July 2022
Pages 6601-6606
DOI: 10.1007/s12274-022-4317-3
Cite this article:
Su Y, Deng C, Liu J, et al. Highly in-plane anisotropy of thermal transport in suspended ternary chalcogenide Ta2NiS5. Nano Research, 2022, 15(7): 6601-6606. https://doi.org/10.1007/s12274-022-4317-3
Topics:
Films

1106

Views

17

Crossref

16

Web of Science

16

Scopus

1

CSCD

Altmetrics
Received: 04 December 2021
Revised: 01 February 2022
Accepted: 11 March 2022
Published: 04 May 2022
© Tsinghua University Press 2022
Return