Graphical Abstract
![](https://wqketang.oss-cn-beijing.aliyuncs.com/unzip/large-zip/zip-239715d7-1acf-42bb-b2b0-35bbdc2101d8/4329/files/4329-TOC.jpg?Expires=1725756903&OSSAccessKeyId=STS.NT5eViCkqzTYdbfdqxMkjpyyq&Signature=dZ8I%2Fzi5bVXUA50alqMbnWRqbUw%3D&security-token=CAISywJ1q6Ft5B2yfSjIr5eALuzdrrRQzZayZkTXgHEtQeRGn7zSkzz2IHtKenhsBOsbtfk1mG5W5%2FgZlqJ9SptIAEfJa9d99MzUP%2FpFltCT1fau5Jko1beHewHKeTOZsebWZ%2BLmNqC%2FHt6md1HDkAJq3LL%2Bbk%2FMdle5MJqP%2B%2FUFB5ZtKWveVzddA8pMLQZPsdITMWCrVcygKRn3mGHdfiEK00he8TouufTinpHMskGA1Aell7Mvyt6vcsT%2BXa5FJ4xiVtq55utye5fa3TRYgxowr%2Fwo0v0YpGya5YzHXwcPskvdKZbo78UqLQlla6w%2BGqFJqvPxr%2Fp8t%2Fx5fWJKAezhVgs8cVM8JOjIqKOscIsiJsO71SmqFV55c8Fdm%2BgUooJVgIMhTnduUfAPJAGOxzJitP%2BUVGGphr60TEnBL4rB5MUctfzRp75SXVPUTzDnGoABjuNLcf76FQN6p3t%2BSlCg%2FxR5C72RIk78k%2BUi44L9ZBmFT6F8GV7aXA52D1Ps56knKF6PAnhRivwyTxgsolycBfvccb3t5jGJ24SgY0aYosAECutxAo7sJhSwlwZvGwGDZJsop1vGiZ8eN1MbtZeRRuMeaZ2I%2BQo%2BnVP6Cf%2F0pDsgAA%3D%3D)
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Two-dimensional (2D) semiconductor heterojunctions are considered as an effective strategy to achieve fast separation of photoinduced carriers. Herein, a novel CoWO4/g-C3N4 (CWO/CN) p–n junction was synthesized using an electrostatic self-assembly method. The constructed 2D/2D p–n heterostructure had a rich hetero-interface, increased charge density, and fast separation efficiency of photoinduced carriers. The in-situ Kelvin probe force microscopy confirmed that the separation pathway of photoinduced carriers through the interface obeyed an II-scheme charge transfer mechanism. Experimental results and density functional theory calculations indicated the differences of work function between CWO and CN induced the generation of built-in electric field, ensuring an efficient separation and transfer process of photoinduced carriers. Under the optimized conditions, the CWO/CN heterojunction displayed enhanced photocatalytic H2 generation activity under full spectrum and visible lights irradiation, respectively. Our study provides a novel approach to design 2D/2D hetero-structured photocatalysts based on p–n type semiconductor for photocatalytic H2 generation.
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