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Research Article

Insight into the growth behaviors of MoS2 nanograins influenced by step edges and atomic structure of the substrate

Shuangyue Wang1, Ni Yang1, Mengyao Li1, Ji Zhang1, Ashraful Azam1, Yin Yao1, Xiaotao Zu2, Liang Qiao1,2, Peter Reece3, John Stride4, Jack Yang1( ), Sean Li1( )
School of Materials Science and Engineering, UNSW Sydney, NSW 2052, Australia
School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
School of Physics, UNSW Sydney, NSW 2052, Australia
School of Chemistry, UNSW Sydney, NSW 2052, Australia
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Graphical Abstract

The step edges of the underlying substrate could guide the formation of unidirectional MoS2 islands, and the geometric structure of the substrate determines the growth dimensionality.

Abstract

The step edges and intrinsic atomic structure of single-crystal substrate play a critical role in determining the growth pathways of transition metal dichalcogenide (TMD) grains, particularly whether the TMDs will grow into wafer-scale single-crystal or anisotropic nanoribbons. Hereby, we investigate the growth behaviours of the MoS2 nanograins on (0001) and ( 11¯02) sapphire substrates. On one hand, the step edges formed on the (0001) surface after thermal treatment are found to promote the macroscopic aggregation of MoS2 nanograins and to form unidirectional large triangular islands along with the < 112¯0> steps in the annealing process, while on the pristine (0001) surface, the MoS2 nanograins grow into a random network-like pattern. Moreover, oxygen treatment on the substrate can further enhance the growth of MoS2 nanograins. Transmission electron microscopy and fast Fourier transform patterns reveal that the substrate could modulate the orientation of MoS2 nanograins during their growing process. On the other hand, the MoS2 nanograins on the (11¯02) surface could self-assemble into one-dimensional nanoribbons due to the strong structural anisotropy of the substrate. In addition, the ratio of Raman intensities for peaks that correspond to the E2g1 and A1g phonon modes shows a linear relationship with the grain size due to the change of the “phonon confinement”. Moreover, new peaks located at 226 and 280 cm−1 can be observed in the off-resonant and resonant Raman spectra for the MoS2 nanograin samples, respectively, which can be attributed to the scatterings from the edges of as-fabricated MoS2 nanostructures.

Keywords

MoS2 nanograins growth behaviorsstep edgesatomic structureRaman spectra evolutionUV–vis absorption

Electronic Supplementary Material

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Nano Research
Volume 15 Issue 8,
August 2022
Pages 7646-7654
DOI: 10.1007/s12274-022-4373-8
Cite this article:
Wang S, Yang N, Li M, et al. Insight into the growth behaviors of MoS2 nanograins influenced by step edges and atomic structure of the substrate. Nano Research, 2022, 15(8): 7646-7654. https://doi.org/10.1007/s12274-022-4373-8
Topics:
Semiconductor quantum dots

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Received: 16 January 2022
Revised: 23 March 2022
Accepted: 29 March 2022
Published: 13 May 2022
© Tsinghua University Press 2022
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