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Research Article

2D-polyimide film sensitized monolayer MoS2 phototransistor enabled near-infrared photodetection

Qingqing Luo1,2, Guangyuan Feng1,2, Yaru Song1,2, Enbing Zhang1,2, Jiangyan Yuan1,2, Dejuan Fa1,2, Qisheng Sun1,2, Shengbin Lei1,2( ), Wenping Hu1,2
Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, China
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Graphical Abstract

A two-dimensional-polyimide (2DPI) sensitized single-layer MoS2 phototransistor was successfully fabricated on Si/SiO2 substrate, near-infrared photodetection with photoresponsivity of 390.5 A/W and specific detectivity of 5.10 × 1012 Jones (λ = 900 nm) has been realized.

Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDCs)-based heterostructures open the door to fabricate various promising hybrid photodetectors, while it is still a challenge to achieve excellent and stable near-infrared (NIR) photoresponse. Here, a MoS2–2DPI (2D-polyimide (2DPI)) heterojunction-based phototransistor (HPT) was fabricated. Near-infrared photodetection with excellent performance has been realized. This HPT exhibited a photoresponsivity of 390.5 A/W, a specific detectivity of 5.10 × 1012 Jones, a photogain 1.04 × 105, and a photoresponse rise and decay time of 400 and 430 ms (λ = 900 nm, P = 16.2 μW/cm2), respectively. It also shows a broadband wavelength response from 405 to 1,020 nm. This superior performance could be attributed to the strong near-infrared absorption and the type-II (staggered) band alignment which ensures efficient charge transfer from 2DPI to MoS2. The face-to-face spatial configuration of MoS2–2DPI heterostructures ensures efficient transfer of photoinduced carriers through the interface, electron and holes can be separated due to the large band offsets. This work presents a significant step for the manipulation of high-performance NIR photodetector of two-dimensional covalent organic polymer-sensitized monolayer TMDCs.

Keywords

MoS2polyimide filmheterojunctionnear-infrared phototransistor

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Nano Research
Volume 15 Issue 9,
September 2022
Pages 8428-8434
DOI: 10.1007/s12274-022-4438-8
Cite this article:
Luo Q, Feng G, Song Y, et al. 2D-polyimide film sensitized monolayer MoS2 phototransistor enabled near-infrared photodetection. Nano Research, 2022, 15(9): 8428-8434. https://doi.org/10.1007/s12274-022-4438-8
Topics:
Photodetectors

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Received: 25 January 2022
Revised: 19 March 2022
Accepted: 15 April 2022
Published: 15 June 2022
© Tsinghua University Press 2022
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