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Research Article

Optical and electronic anisotropy of a 2D semiconductor SiP

Shijun Hou1,2, Zhengfeng Guo3, Tao Xiong1,2, Xingang Wang1,2, Juehan Yang1,2, Yue-Yang Liu1,2, Zhi-Chuan Niu1,2,5, Shiyuan Liu3, Bing Liu5, Shenqiang Zhai4( ), Honggang Gu3( ), Zhongming Wei1,2,5( )
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100083, China
State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Joint Laboratory of Advanced Semiconductor, Nanjing Guoke Semiconductor CO., Ltd., Nanjing 210008, China
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Graphical Abstract

SiP exhibits obvious anisotropy and excellent photoelectronic properties. This research article systematically introduces optical anisotropy, electronic anisotropy, and various photoelectronic properties of SiP.

Abstract

Two-dimensional anisotropic materials have been widely concerned by researchers because of their great application potential in the field of polarized detector devices and optical elements, which is a very important and popular research direction at present. As a IV-V two-dimensional material, silicon phosphide (SiP) has obvious in-plane anisotropy and exhibits excellent optical and electrical anisotropy properties. Herein, the optical anisotropy of SiP is studied by spectrometric ellipsometry measurements and polarization-resolved optical microscopy, and its electrical anisotropy is tested by SiP-based field-effect transistor. In addition, the normal and anisotropic photoelectric performance of SiP is shown by fabricating a photodetector and measuring it. In various measurements, SiP exhibits obvious anisotropy and good photoelectric performance. This work provides basic optical, electrical, and photoelectric performance information of SiP, and lays a foundation for further study of SiP and applications of SiP-based devices.

Keywords

two-dimensional materialsSiPoptical anisotropyelectrical anisotropyphotoelectronic properties

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Nano Research
Volume 15 Issue 9,
September 2022
Pages 8579-8586
DOI: 10.1007/s12274-022-4481-5
Cite this article:
Hou S, Guo Z, Xiong T, et al. Optical and electronic anisotropy of a 2D semiconductor SiP. Nano Research, 2022, 15(9): 8579-8586. https://doi.org/10.1007/s12274-022-4481-5
Topics:
Semiconductor devices

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Received: 15 March 2022
Revised: 17 April 2022
Accepted: 28 April 2022
Published: 23 June 2022
© Tsinghua University Press 2022
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