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Research Article

Controlled growth of two-dimensional InAs single crystals via van der Waals epitaxy

Jiuxiang Dai1, Teng Yang2, Zhitong Jin1, Yunlei Zhong1, Xianyu Hu1, Jingyi Zou3, Weigao Xu4, Tao Li1, Yuxuan Lin5, Xu Zhang3, Lin Zhou1( )
School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai 200240, China
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, USA
Key Laboratory of Mesoscopic Chemistry, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA
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Graphical Abstract

We obtain high-quality two-dimensional (2D) indium arsenide (InAs) single crystals via van der Waals epitaxy, and explore the optical and electrical properties of InAs single crystals.

Abstract

Two-dimensional (2D) indium arsenide (InAs) is promising for future electronic and optoelectronic applications such as high-performance nanoscale transistors, flexible and wearable devices, and high-sensitivity broadband photodetectors, and is advantageous for its heterogeneous integration with Si-based electronics. However, the synthesis of 2D InAs single crystals is challenging because of the nonlayered structure. Here we report the van der Waals epitaxy of 2D InAs single crystals, with their thickness down to 4.8 nm, and their lateral sizes up to ~ 37 μm. The as-grown InAs flakes have high crystalline quality and are homogenous. The thickness can be tuned by growth time and temperature. Moreover, we explore the thickness-dependent optical properties of InAs flakes. Transports measurement reveals that 2D InAs possesses high conductivity and high carrier mobility. Our work introduces InAs to 2D materials family and paves the way for applying 2D InAs in high-performance electronics and optoelectronics.

Keywords

two-dimensional materialsvan der Waals epitaxyindium arsenidenonlayered material

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Nano Research
Volume 15 Issue 11,
November 2022
Pages 9954-9959
DOI: 10.1007/s12274-022-4543-8
Cite this article:
Dai J, Yang T, Jin Z, et al. Controlled growth of two-dimensional InAs single crystals via van der Waals epitaxy. Nano Research, 2022, 15(11): 9954-9959. https://doi.org/10.1007/s12274-022-4543-8
Topics:
Semiconducting indium compounds
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Eighth Nano Research Award

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Received: 19 February 2022
Revised: 02 May 2022
Accepted: 16 May 2022
Published: 03 June 2022
© Tsinghua University Press 2022
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